Generation of spin currents and spin densities in systems with reduced symmetry

We show that the spin-current response of a semiconductor crystal to an external electric field is considerably more complex than previously assumed. While in systems of high symmetry only the spin-Hall components are allowed, in systems of lower symmetry other non-spin-Hall components may be present. We argue that, when spin-orbit interactions are present only in the band structure, the distinction between intrinsic and extrinsic contributions to the spin current is not useful. We show that the generation of spin currents and that of spin densities in an electric field are closely related, and that our general theory provides a systematic way to distinguish between them in experiment. We discuss also the meaning of vertex corrections in systems with spin-orbit interactions.Comment: 4 page

Equilibrium spin currents: Non-Abelian gauge invariance and color diamagnetism in condensed matter

The spin-orbit (SO) interaction in condensed matter can be described in terms of a non-Abelian potential known in high-energy physics as a color field. I show that a magnetic component of this color field inevitably generates diamagnetic color currents which are just the equilibrium spin currents discussed in a condensed matter context. These dissipationless spin currents thus represent a universal property of systems with SO interaction. In semiconductors with linear SO coupling the spin currents are related to the effective non-Abelian field via Yang-Mills magnetostatics equation.Comment: RevTeX, 4 page

Spin precession and alternating spin polarization in spin-3/2 hole systems

The spin density matrix for spin-3/2 hole systems can be decomposed into a sequence of multipoles which has important higher-order contributions beyond the ones known for electron systems [R. Winkler, Phys. Rev. B \textbf{70}, 125301 (2004)]. We show here that the hole spin polarization and the higher-order multipoles can precess due to the spin-orbit coupling in the valence band, yet in the absence of external or effective magnetic fields. Hole spin precession is important in the context of spin relaxation and offers the possibility of new device applications. We discuss this precession in the context of recent experiments and suggest a related experimental setup in which hole spin precession gives rise to an alternating spin polarization.Comment: 4 pages, 2 figures, to appear in Physical Review Letter

Spin interference in silicon three-terminal one-dimensional rings

We present the first findings of the spin transistor effect in the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the n-type Si (100) surface. The coherence and phase sensitivity of the spin-dependent transport of holes are studied by varying the value of the external magnetic field and the bias voltage that are applied perpendicularly to the plane of the double-slit ring. Firstly, the amplitude and phase sensitivity of the 0.7(2e^2/h) feature of the hole quantum conductance staircase revealed by the quantum point contact inserted in the one of the arms of the double-slit ring are found to result from the interplay of the spontaneous spin polarization and the Rashba spin-orbit interaction. Secondly, the quantum scatterers connected to two one-dimensional leads and the quantum point contact inserted are shown to define the amplitude and the phase of the Aharonov-Bohm and the Aharonov-Casher conductance oscillations.Comment: 8 pages, 5 figure

Landau level mixing by full spin-orbit interactions

We study a two-dimensional electron gas in a perpendicular magnetic field in the presence of both Rashba and Dresselhaus spin-orbit interactions. Using a Bogoliubov transformation we are able to write an approximate formula for the Landau levels, thanks to the simpler form of the resulting Hamiltonian. The exact numerical calculation of the energy levels, is also made simpler by our formulation. The approximate formula and the exact numerical results show excellent agreement for typical semiconductors, especially at high magnetic fields. We also show how effective Zeeman coupling is modified by spin-orbit interactions.Comment: 5 pages, 5 figure

Two-dimensional imaging of the spin-orbit effective magnetic field

We report on spatially resolved measurements of the spin-orbit effective magnetic field in a GaAs/InGaAs quantum-well. Biased gate electrodes lead to an electric-field distribution in which the quantum-well electrons move according to the local orientation and magnitude of the electric field. This motion induces Rashba and Dresselhaus effective magnetic fields. The projection of the sum of these fields onto an external magnetic field is monitored locally by measuring the electron spin-precession frequency using time-resolved Faraday rotation. A comparison with simulations shows good agreement with the experimental data.Comment: 6 pages, 4 figure

Edge Dynamics in a Quantum Spin Hall State: Effects from Rashba Spin-Orbit Interaction

We analyze the dynamics of the helical edge modes of a quantum spin Hall state in the presence of a spatially non-uniform Rashba spin-orbit (SO) interaction. A randomly fluctuating Rashba SO coupling is found to open a scattering channel which causes localization of the edge modes for a weakly screened electron-electron (e-e) interaction. A periodic modulation of the SO coupling, with a wave number commensurate with the Fermi momentum, makes the edge insulating already at intermediate strengths of the e-e interaction. We discuss implications for experiments on edge state transport in a HgTe quantum well.Comment: 4 pages, 2 figures; published versio

Spin relaxation rates in quasi-one-dimensional coupled quantum dots

We study theoretically the spin relaxation rate in quasi-one-dimensional coupled double semiconductor quantum dots. We consider InSb and GaAs-based systems in the presence of the Rashba spin-orbit interaction, which causes mixing of opposite-spin states, and allows phonon-mediated transitions between energy eigenstates. Contributions from all phonon modes and coupling mechanisms in zincblende semiconductors are taken into account. The spin relaxation rate is shown to display a sharp, cusp-like maximum as function of the interdot-barrier width, at a value of the width which can be controlled by an external magnetic field. This remarkable behavior is associated with the symmetric-antisymmetric level splitting in the structure.Comment: 4 figures, Submitted to Applied Physics Letter

Fast and robust spin manipulation in a quantum dot by electric fields

We apply an invariant-based inverse engineering method to control by time-dependent electric fields electron spin dynamics in a quantum dot with spin-orbit coupling in a weak magnetic field. The designed electric fields provide a shortcut to adiabatic processes that flips the spin rapidly, thus avoiding decoherence effects. This approach, being robust with respect to the device-dependent noise, can open new possibilities for the spin-based quantum information processing.Comment: 7 pages, 6 figures, with supplemental material. Errors in the published version have been correcte

Invariant expansion for the trigonal band structure of graphene

We present a symmetry analysis of the trigonal band structure in graphene, elucidating the transformational properties of the underlying basis functions and the crucial role of time-reversal invariance. Group theory is used to derive an invariant expansion of the Hamiltonian for electron states near the K points of the graphene Brillouin zone. Besides yielding the characteristic k-linear dispersion and higher-order corrections to it, this approach enables the systematic incorporation of all terms arising from external electric and magnetic fields, strain, and spin-orbit coupling up to any desired order. Several new contributions are found, in addition to reproducing results obtained previously within tight-binding calculations. Physical ramifications of these new terms are discussed.Comment: 10 pages, 1 figure; expanded version with more details and additional result