Effects of electron scattering on the topological properties of nanowires: Majorana fermions from disorder and superlattices

We focus on inducing topological state from regular, or irregular scattering in (i) p-wave superconducting wires and (ii) Rashba wires proximity coupled to an s-wave superconductor. We find that contrary to common expectations the topological properties of both systems are fundamentally different: In p-wave wires, disorder generally has a detrimental effect on the topological order and the topological state is destroyed beyond a critical disorder strength. In contrast, in Rashba wires, which are relevant for recent experiments, disorder can {\it induce} topological order, reducing the need for quasiballistic samples to obtain Majorana fermions. Moreover, we find that the total phase space area of the topological state is conserved for long disordered Rashba wires, and can even be increased in an appropriately engineered superlattice potential.Comment: 5 pages, 3 figs, RevTe

One-loop surface tensions of (supersymmetric) kink domain walls from dimensional regularization

We consider domain walls obtained by embedding the 1+1-dimensional $\phi^4$-kink in higher dimensions. We show that a suitably adapted dimensional regularization method avoids the intricacies found in other regularization schemes in both supersymmetric and non-supersymmetric theories. This method allows us to calculate the one-loop quantum mass of kinks and surface tensions of kink domain walls in a very simple manner, yielding a compact d-dimensional formula which reproduces many of the previous results in the literature. Among the new results is the nontrivial one-loop correction to the surface tension of a 2+1 dimensional N=1 supersymmetric kink domain wall with chiral domain-wall fermions.Comment: 23 pages, LATeX; v2: 25 pages, 2 references added, extended discussion of renormalization schemes which dispels apparent contradiction with previous result

Graphene Rings in Magnetic Fields: Aharonov-Bohm Effect and Valley Splitting

We study the conductance of mesoscopic graphene rings in the presence of a perpendicular magnetic field by means of numerical calculations based on a tight-binding model. First, we consider the magnetoconductance of such rings and observe the Aharonov-Bohm effect. We investigate different regimes of the magnetic flux up to the quantum Hall regime, where the Aharonov-Bohm oscillations are suppressed. Results for both clean (ballistic) and disordered (diffusive) rings are presented. Second, we study rings with smooth mass boundary that are weakly coupled to leads. We show that the valley degeneracy of the eigenstates in closed graphene rings can be lifted by a small magnetic flux, and that this lifting can be observed in the transport properties of the system.Comment: 12 pages, 9 figure

Robustness of edge states in graphene quantum dots

We analyze the single particle states at the edges of disordered graphene quantum dots. We show that generic graphene quantum dots support a number of edge states proportional to circumference of the dot over the lattice constant. Our analytical theory agrees well with numerical simulations. Perturbations breaking electron-hole symmetry like next-nearest neighbor hopping or edge impurities shift the edge states away from zero energy but do not change their total amount. We discuss the possibility of detecting the edge states in an antidot array and provide an upper bound on the magnetic moment of a graphene dot.Comment: Added figure 6, extended discussion (version as accepted by Physical Review B

Theory of the topological Anderson insulator

We present an effective medium theory that explains the disorder-induced transition into a phase of quantized conductance, discovered in computer simulations of HgTe quantum wells. It is the combination of a random potential and quadratic corrections proportional to p^2 sigma_z to the Dirac Hamiltonian that can drive an ordinary band insulator into a topological insulator (having an inverted band gap). We calculate the location of the phase boundary at weak disorder and show that it corresponds to the crossing of a band edge rather than a mobility edge. Our mechanism for the formation of a topological Anderson insulator is generic, and would apply as well to three-dimensional semiconductors with strong spin-orbit coupling.Comment: 4 pages, 3 figures (updated figures, calculated DOS

Formation of Nickel-Platinum Silicides on a Silicon Substrate: Structure, Phase Stability, and Diffusion from Ab initio Computations

The formation of Ni(Pt)silicides on a Si(001) surface is investigated using an ab initio approach. After deposition of a Ni overlayer alloyed with Pt, the calculations reveal fast diffusion of Ni atoms into the Si lattice, which leads initially to the formation of Ni2Si. At the same time Si atoms are found to diffuse into the metallic overlayer. The transformation of Ni2Si into NiSi is likely to proceed via a vacancy-assisted diffusion mechanism. Silicon atoms are the main diffusing species in this transformation, migrating from the Si substrate through the growing NiSi layer into the Ni2Si. Pt atoms have a low solubility in Ni2Si and prefer Si-sites in the NiSi lattice, thereby stabilizing the NiSi phase. The diffusivity of Pt is lower than that of Ni. Furthermore, Pt atoms have a tendency to segregate to interfaces, thereby acting as diffusion barriers.Comment: 36 pages, 9 tables, 6 figure