The intrinsic electrical equivalent circuit of a laser diode

The basic electrical equivalent circuit of a laser diode is derived. The effects of spontaneous emission and self-pulsations are included. It is found that self-pulsations are represented by a negative resistance in the model. Application of this model suggests purely electronic methods of suppressing relaxation oscillations in laser diodes

Breonna’s Law: The Genesis, Not the Culmination, for Policy Response to Violent Confrontation during No-Knock Search Warrants

First, this paper constructs the background on search warrants, including the legal precedent, policy environment, and stakeholders involved. Second, and most importantly, it will analyze the outcomes, impacts, and, particularly, the disproportionate minority impact of each section of Breonna’s Law. Lastly, this paper will contribute an informed assessment of the policy and further policy recommendations that can be taken into account to address the issue of violent confrontations and casualties, especially against people of color, during the execution of search warrants

A Study of Groupthink and Multiple Advocacy in Presidential Foreign Policy Fiascos

As “the sole organ of the federal government in the field of international relations,” Presidents have almost exclusively presided over foreign policy. Modern Presidents, spanning from Eisenhower, Kennedy, Ford, Carter, and Reagan, have readily encountered foreign policy crises, with varying degrees of success. Why do some President fail while others triumph? It comes down to an assortment of factors: organizational structure, multiple advocacy, and groupthink. Organizational structure affects how information is disseminated and decisions are made. Multiple advocacy brings out all important interests during deliberations. Groupthink paralyzes deliberations by causing conformity, cohesion, and replaces critical thinking with irrationality. These frameworks provide a reference for past and future cases of foreign policy crises. Therefore, drawing upon these frameworks, I will investigate the decision-making processes of the aforementioned five Presidents and the corresponding crises and conclude how decisions were made. Finally, I will consider contemporary Presidents–Trump and Biden–to install nuance into the discussion about their encounters with foreign policy crises

The Pioneering Legacy and Consequence of Wernher von Braun

The fundamental research question of this paper revolves around the idea of; would it have been possible for the United States to land on the Moon by the close of the decade if it hadn’t been for the effort, influence, and work of Wernher von Braun? The secondary question of the paper is what significant accomplishments and work did von Braun contribute to the United States space flight program that consequently led to the success in 1969? Through the effort, work, and influence of Wernher von Braun, it was possible for the United States to land on the Moon in 1969. Overall, had it not been for the initiative and accomplishments of von Braun, the United States would have either made it the Moon far later than 1969 or would have never landed on the Moon at all. To clearly understand how the United States landed a man on the Moon in 1969, it is essential to acknowledge the significant accomplishments and work of Wernher von Braun during the 1950s and 1960s. These accomplishments can be categorized into two structures: decisive advocacy and leadership and critical administrative and scientific endeavors at NASA. As a result of investigating the inner workings of the colossal and herculean character of Wernher von Braun, this inquiry provides an integrative argument as to why von Braun was fundamental for the United States landing on the Moon in 1969

Single-growth embedded epitaxy AlGaAs injection lasers with extremely low threshold currents

A new type of strip-geometry AlGaAs double-heterostructure laser with an embedded optical waveguide has been developed. The new structure is fabricated using a single step of epitaxial growth. Lasers with threshold currents as low as 9.5 mA (150 µm long) were obtained. These lasers exhibit operation in a single spatial and longitudinal mode, have differential quantum efficiencies exceeding 45%, and a characteristic temperature of 175° C. They emit more than 12 mW/facet of optical power without any kinks

Gallium Arsenide Monolithic Optoelectronic Circuits

The optical properties of GaAs make it a very useful material for the fabrication of optical emitters and detectors. GaAs also possesses electronic properties which allow the fabrication of high speed electronic devices which are superior to conventional silicon devices. Monolithic optoelectronic circuits are formed by the integration of optical and electronic devices on a single GaAs substrate. Integration of many devices is most easily accomplished on a semi-insulating (SI) sub-strate. Several laser structures have been fabricated on SI GaAs substrates. Some of these lasers have been integrated with Gunn diodes and with metal semiconductor field effect transistors (MESFETs). An integrated optical repeater has been demonstrated in which MESFETs are used for optical detection and electronic amplification, and a laser is used to regenerate the optical signal. Monolithic optoelectronic circuits have also been constructed on conducting substrates. A heterojunction bipolar transistor driver has been integrated with a laser on an n-type GaAs substrate

A monolithically integrated optical repeater

A monolithically integrated optical repeater has been fabricated on a single-crystal semi-insulating GaAs substrate. The repeater consists of an optical detector, an electronic amplifier, and a double heterostructure crowding effect laser. The repeater makes use of three metal semiconductor field effect transistors, one of which is used as the optical detector. With light from an external GaAlAs laser incident on the detector, an overall optical power gain of 10 dB from both laser facets was obtained

Be-implanted (GaAl)As stripe geometry lasers

GaAl)As double-heterostructure stripe geometry lasers have been fabricated using Be ion implantation. Pulsed threshold currents as low as 21 mA have been found. The light-vs-current characteristics were kink-free up to 10 mW output power and the measured differential quantum efficiency was 45%

Strategies for protecting intellectual property when using CUDA applications on graphics processing units

Recent advances in the massively parallel computational abilities of graphical processing units (GPUs) have increased their use for general purpose computation, as companies look to take advantage of big data processing techniques. This has given rise to the potential for malicious software targeting GPUs, which is of interest to forensic investigators examining the operation of software. The ability to carry out reverse-engineering of software is of great importance within the security and forensics elds, particularly when investigating malicious software or carrying out forensic analysis following a successful security breach. Due to the complexity of the Nvidia CUDA (Compute Uni ed Device Architecture) framework, it is not clear how best to approach the reverse engineering of a piece of CUDA software. We carry out a review of the di erent binary output formats which may be encountered from the CUDA compiler, and their implications on reverse engineering. We then demonstrate the process of carrying out disassembly of an example CUDA application, to establish the various techniques available to forensic investigators carrying out black-box disassembly and reverse engineering of CUDA binaries. We show that the Nvidia compiler, using default settings, leaks useful information. Finally, we demonstrate techniques to better protect intellectual property in CUDA algorithm implementations from reverse engineering