Thermal distortions of non-Gaussian beams in Fabry–Perot cavities

Thermal effects are already important in currently operating interferometric gravitational wave detectors. Planned upgrades of these detectors involve increasing optical power to combat quantum shot noise. We consider the ramifications of this increased power for one particular class of laser beams—wide, flat-topped, mesa beams. In particular we model a single mesa beam Fabry–Perot cavity having thermoelastically deformed mirrors. We calculate the intensity profile of the fundamental cavity eigenmode in the presence of thermal perturbations, and the associated changes in thermal noise. We also outline an idealized method of correcting for such effects. At each stage we contrast our results with those of a comparable Gaussian beam cavity. Although we focus on mesa beams the techniques described are applicable to any azimuthally symmetric system

Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion implantation for development of ion-implanted silicon field-effect transistors for spin-dependent transport experiments is presented. Standard annealing strategies are considered to activate the implanted dopants and repair the implantation damage in test metal-oxide-semiconductor (MOS) capacitors. Fixed oxide charge, interface trapped charge and the role of minority carriers in DLTS are investigated. A furnace anneal at 950 $\rm ^{o}$C was found to activate the dopants but did not repair the implantation damage as efficiently as a 1000 $\rm ^{o}$C rapid thermal anneal. No evidence of bulk traps was observed after either of these anneals. The ion- implanted spin-dependent transport device is shown to have expected characteristics using the processing strategy determined in this study.Comment: 4 pages, 6 figure

Electrically detected magnetic resonance using radio-frequency reflectometry

The authors demonstrate readout of electrically detected magnetic resonance at radio frequencies by means of an LCR tank circuit. Applied to a silicon field-effect transistor at milli-kelvin temperatures, this method shows a 25-fold increased signal-to-noise ratio of the conduction band electron spin resonance and a higher operational bandwidth of > 300 kHz compared to the kHz bandwidth of conventional readout techniques. This increase in temporal resolution provides a method for future direct observations of spin dynamics in the electrical device characteristics.Comment: 9 pages, 3 figure

Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here we demonstrate that high-fluence MeV ion-implantation, at elevated temperatures avoids graphitization and can be used to achieve doping densities of 6 at.%. In order to quantify the diamond crystal damage associated with implantation Raman spectroscopy was performed, demonstrating high temperature annealing recovers the lattice. Additionally, low-temperature electronic transport measurements show evidence of charge carrier densities close to the metal-insulator-transition. After electronic characterization, secondary ion mass spectrometry was performed to map out the ion profile of the implanted plates. The analysis shows close agreement with the simulated ion-profile assuming scaling factors that take into account an average change in diamond density due to device fabrication. Finally, the data show that boron diffusion is negligible during the high temperature annealing process.Comment: 22 pages, 6 figures, submitted to JA

Single-shot readout of electron spin states in a quantum dot using spin-dependent tunnel rates

We present a method for reading out the spin state of electrons in a quantum dot that is robust against charge noise and can be used even when the electron temperature exceeds the energy splitting between the states. The spin states are first correlated to different charge states using a spin dependence of the tunnel rates. A subsequent fast measurement of the charge on the dot then reveals the original spin state. We experimentally demonstrate the method by performing read-out of the two-electron spin states, achieving a single-shot visibility of more than 80%. We find very long triplet-to-singlet relaxation times (up to several milliseconds), with a strong dependence on in-plane magnetic field.Comment: 4 pages, 4 figure