5,783 research outputs found
Thermal distortions of non-Gaussian beams in Fabry–Perot cavities
Thermal effects are already important in currently operating interferometric gravitational wave detectors. Planned upgrades of these detectors involve increasing optical power to combat quantum shot noise. We consider the ramifications of this increased power for one particular class of laser beams—wide, flat-topped, mesa beams. In particular we model a single mesa beam Fabry–Perot cavity having thermoelastically deformed mirrors. We calculate the intensity profile of the fundamental cavity eigenmode in the presence of thermal perturbations, and the associated changes in thermal noise. We also outline an idealized method of correcting for such effects. At each stage we contrast our results with those of a comparable Gaussian beam cavity. Although we focus on mesa beams the techniques described are applicable to any azimuthally symmetric system
Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport
A deep level transient spectroscopy (DLTS) study of defects created by
low-fluence, low-energy ion implantation for development of ion-implanted
silicon field-effect transistors for spin-dependent transport experiments is
presented. Standard annealing strategies are considered to activate the
implanted dopants and repair the implantation damage in test
metal-oxide-semiconductor (MOS) capacitors. Fixed oxide charge, interface
trapped charge and the role of minority carriers in DLTS are investigated. A
furnace anneal at 950 C was found to activate the dopants but did not
repair the implantation damage as efficiently as a 1000 C rapid
thermal anneal. No evidence of bulk traps was observed after either of these
anneals. The ion- implanted spin-dependent transport device is shown to have
expected characteristics using the processing strategy determined in this
study.Comment: 4 pages, 6 figure
Electrically detected magnetic resonance using radio-frequency reflectometry
The authors demonstrate readout of electrically detected magnetic resonance
at radio frequencies by means of an LCR tank circuit. Applied to a silicon
field-effect transistor at milli-kelvin temperatures, this method shows a
25-fold increased signal-to-noise ratio of the conduction band electron spin
resonance and a higher operational bandwidth of > 300 kHz compared to the kHz
bandwidth of conventional readout techniques. This increase in temporal
resolution provides a method for future direct observations of spin dynamics in
the electrical device characteristics.Comment: 9 pages, 3 figure
Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures
Boron implantation with in-situ dynamic annealing is used to produce highly
conductive sub-surface layers in type IIa (100) diamond plates for the search
of a superconducting phase transition. Here we demonstrate that high-fluence
MeV ion-implantation, at elevated temperatures avoids graphitization and can be
used to achieve doping densities of 6 at.%. In order to quantify the diamond
crystal damage associated with implantation Raman spectroscopy was performed,
demonstrating high temperature annealing recovers the lattice. Additionally,
low-temperature electronic transport measurements show evidence of charge
carrier densities close to the metal-insulator-transition. After electronic
characterization, secondary ion mass spectrometry was performed to map out the
ion profile of the implanted plates. The analysis shows close agreement with
the simulated ion-profile assuming scaling factors that take into account an
average change in diamond density due to device fabrication. Finally, the data
show that boron diffusion is negligible during the high temperature annealing
process.Comment: 22 pages, 6 figures, submitted to JA
Single-shot readout of electron spin states in a quantum dot using spin-dependent tunnel rates
We present a method for reading out the spin state of electrons in a quantum
dot that is robust against charge noise and can be used even when the electron
temperature exceeds the energy splitting between the states. The spin states
are first correlated to different charge states using a spin dependence of the
tunnel rates. A subsequent fast measurement of the charge on the dot then
reveals the original spin state. We experimentally demonstrate the method by
performing read-out of the two-electron spin states, achieving a single-shot
visibility of more than 80%. We find very long triplet-to-singlet relaxation
times (up to several milliseconds), with a strong dependence on in-plane
magnetic field.Comment: 4 pages, 4 figure
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