セッション 21セイキ ノ ニッチュウ カンケイ ニ ツイテ

日中台共同研究「現代中国と東アジアの新環境」 ②21世紀の日中関係 : 青年研究者の思索と対

Control of Interface Order by Inverse Quasi-Epitaxial Growth of Squaraine/Fullerene Thin Film Photovoltaics

It has been proposed that interface morphology affects the recombination rate for electrons and holes at donor–acceptor heterojunctions in thin film organic photovoltaic cells. The optimal morphology is one where there is disorder at the heterointerface and order in the bulk of the thin films, maximizing both the short circuit current and open circuit voltage. We show that an amorphous, buried functionalized molecular squaraine donor layer can undergo an “inverted” quasi-epitaxial growth during postdeposition processing, whereby crystallization is seeded by a subsequently deposited self-assembled nanocrystalline acceptor C₆₀ cap layer. We call this apparently unprecedented growth process from a buried interface “inverse quasi-epitaxy” where the crystallites of these “soft” van der Waals bonded materials are only approximately aligned to those of the cap. The resulting crystalline interface hastens charge recombination, thereby reducing the open circuit voltage in an organic photovoltaic cell. The lattice registration also facilitates interdiffusion of the squaraine donor and C₆₀ acceptor, which dramatically improves the short circuit current. By controlling the extent to which this crystallization occurs, the voltage losses can be minimized, resulting in power conversion efficiencies of η_P = 5.4 ± 0.3% for single-junction and η_P = 8.3 ± 0.4% for tandem small-molecule photovoltaics. This is a general phenomenon with implications for all organic donor–acceptor junctions. That is, epitaxial relationships typically result in a reduction in open circuit voltage that must be avoided in both bilayer and bulk heterojunction organic photovoltaic cells