Interfacial behavior of resistive switching in ITO–PVK–Al WORM memory devices

10.1088/0022-3727/49/7/075104Journal of Physics D: Applied Physics497075104-07510

Electrostatic model of the energy-bending within organic semiconductors: experiment and simulation

10.1088/0953-8984/28/36/365002Journal of Physics: Condensed Matter2836365002-36500

Free-free opacity in warm dense aluminum

We present calculations of the free-free opacity of warm, solid-density aluminum at photon energies between the plasma frequency at 15 eV and the L-edge at 73 eV, using both density functional theory combined with molecular dynamics and a semi-analytical model in the RPA framework which includes exciton contributions. As both the ion and electron temperature is increased from room temperature to 10 eV, we see a marked increase in the opacity. The effect is less pronounced if only the electron temperature is allowed to increase, while the lattice remains at room temperature. The physical significance of these increases is discussed in terms of intense light-matter interactions on both femtosecond and picosecond time scales. © 2009 Elsevier B.V. All rights reserved

Investigation into the Gaussian density of states widths of organic semiconductors

10.1088/0022-3727/49/32/325106Journal of Physics D: Applied Physics4932325106-32510

Highly efficient processable molybdenum trioxide as a hole blocking interlayer for super-yellow organic light emitting diode

10.1088/0022-3727/49/39/395105Journal of Physics D: Applied Physics4939395105-39510

Energy level alignment of blended organic semiconductors and electrodes at the interface

10.1016/j.cap.2018.05.002CURRENT APPLIED PHYSICS189982-99

Unravelling strong electronic interlayer and intralayer correlations in a transition metal dichalcogenide

10.1038/s41467-021-27182-yNATURE COMMUNICATIONS12

Importance of Electronic Correlations and Unusual Excitonic Effects in Formamidinium Lead Halide Perovskites

10.1103/PhysRevX.8.021034PHYSICAL REVIEW X8