4 research outputs found
Efficient Photoelectrochemical Water Splitting over Anodized <i>p</i>‑Type NiO Porous Films
NiO photocathodes were fabricated
by alkaline etching-anodizing
nickel foil in an organic-based electrolyte. The resulting films have
a highly macroporous surface structure due to rapid dissolution of
the oxide layer as it is formed during the anodization process. We
are able to control the films’ surface structures by varying
the anodization duration and voltage. With an onset potential of +0.53
V versus the reversible hydrogen electrode (RHE), the photocurrent
efficiency of the NiO electrodes showed dependencies on their surface
roughness factor, which determines the extent of semiconductor-electrolyte
interface and the associated quality of the NiO surface sites. A maximum
incident photon-to-current conversion efficiency (IPCE<sub>max</sub>) of 22% was obtained from NiO film with a roughness factor of 8.4.
Adding an Al<sub>2</sub>O<sub>3</sub> blocking layer minimizes surface
charge recombination on the NiO and hence increased the IPCE<sub>max</sub> to 28%. The NiO/Al<sub>2</sub>O<sub>3</sub> films were extremely
stable during photoelectrochemical water splitting tests lasting up
to 20 h, continuously producing hydrogen and oxygen in the stoichiometric
2:1 ratio. The NiO/Al<sub>2</sub>O<sub>3</sub> and NiO films fabricated
using the alkaline anodization process produced 12 and 6 times as
much hydrogen, respectively, as those fabricated using commercial
NiO nanoparticles
Shuttling Photoelectrochemical Electron Transport in Tricomponent CdS/rGO/TiO<sub>2</sub> Nanocomposites
Composite
photoelectrodes consisting of CdS sensitizer, reduced
graphene oxide (rGO) transporter, and TiO<sub>2</sub> acceptor were
synthesized in a solvothermal synthesis. Under solvothermal conditions,
the dimethyl sulfoxide (DMSO) solvent medium decomposed to form free
sulfides, which facilitated the formation of CdS and, at the same
time, which also reduced graphene oxide sheets by forming disulfide
moieties. Compared to pure CdS and TiO<sub>2</sub>, coupling of these
materials either as bi- or tricomponent composites (including rGO)
allowed efficient interfacial charge separation and prolonged electron
lifetimes. In particular, in the CdS/rGO/TiO<sub>2</sub> tricomposite
case, the rGO plays vital roles in alleviating trapped electrons at
the heterojunction and serves as a platform for shuttling electrons
between CdS and TiO<sub>2</sub>. Taking into account all of the structure-related
charge-transport characteristics, including interfacial contacts,
the highest quantum efficiency (incident photon-to-current efficiency,
IPCE, at 460 nm = 12%) was achieved for the CdS/rGO/TiO<sub>2</sub> tricomposite, and this was 6-fold that of CdS/TiO<sub>2</sub>
Investigation of the Exchange Kinetics and Surface Recovery of Cd<sub><i>x</i></sub>Hg<sub>1–<i>x</i></sub>Te Quantum Dots during Cation Exchange Using a Microfluidic Flow Reactor
Detailed analyses
of coupled photoluminescence, emission lifetime,
and absorption measurements have been made on the products of cation
exchange reactions between CdTe nanocrystals and Hg<sup>2+</sup> salt/ligand
solutions in a microfluidic flow reactor and capillary measurement
cell to probe the reaction kinetics over the seconds to hours time
scale and to establish the influence of the reaction conditions on
the spatial distribution of the mixed cations within the resulting
Cd<sub><i>x</i></sub>Hg<sub>1–<i>x</i></sub>Te colloidal quantum dots. The establishment of the evolution of
the radiative and nonradiative rates allowed the recovery of the emission
quantum yield in Cd<sub><i>x</i></sub>Hg<sub>1–<i>x</i></sub>Te quantum dots to be quantified to almost 50% and
the necessary time scales to be determined for each set of reaction
conditions. The reaction kinetics showed clear indication of a fast surface exchange
process followed by a slower internal rearrangement of the cation
distribution
Semiconductor Nanocrystals as Luminescent Down-Shifting Layers To Enhance the Efficiency of Thin-Film CdTe/CdS and Crystalline Si Solar Cells
A simple optical model is presented
to describe the influence of a planar luminescent down-shifting layer
(LDSL) on the external quantum efficiencies of photovoltaic solar
cells. By employing various visible light-emitting LDSLs based on
CdTe quantum dots or CdSe/CdS core–shell quantum dots and tetrapods,
we show enhancement in the quantum efficiencies of thin-film CdTe/CdS
solar cells predominantly in the ultraviolet regime, the extent of
which depends on the photoluminescence quantum yield (PLQY) of the
quantum dots. Similarly, a broad enhancement in the quantum efficiencies
of crystalline Si solar cells, from ultraviolet to visible regime,
can be expected for an infrared emitting LDSL based on PbS quantum
dots. A PLQY of 80% or higher is generally required to achieve a maximum
possible short-circuit current increase of 16 and 50% for the CdTe/CdS
and crystalline Si solar cells, respectively. As also demonstrated
in this work, the model can be conveniently extended to incorporate
LDSLs based on organic dyes or upconverting materials