1 research outputs found
Effect of Extrinsically Introduced Passive Interface Layer on the Performance of Ferroelectric Tunnel Junctions
We report the effect of the top electrode/functional
layer interface on the performance of ferroelectric tunnel junctions.
Ex situ and in situ fabrication process were used to fabricate the
top Pt electrode. With the ex situ fabrication process, one passive
layer at the top interface would be induced. Our experimental results
show that the passive interface layer of the ex situ devices increases
the coercive voltage of the functional BaTiO<sub>3</sub> layer and
decreases the tunneling current magnitude. However, the ex situ tunneling
devices possess more than 1000 times larger ON/OFF ratios than that
of the in situ devices with the same size of top electrode