244 research outputs found

    Electronic transport through a quantum dot network

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    The conductance through a finite quantum dot network is studied as a function of inter-dot coupling. As the coupling is reduced, the system undergoes a transition from the antidot regime to the tight binding limit, where Coulomb resonances with on average increasing charging energies are observed. Percolation models are used to describe the conduction in the open and closed regime and contributions from different blockaded regions can be identified. A strong negative average magnetoresistance in the Coulomb blockade regime is in good quantitative agreement with theoretical predictions for magnetotunneling between individual quantum dots.Comment: 5 pages, 5 figure

    Influence of etching processes on electronic transport in mesoscopic InAs/GaSb quantum well devices

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    We report the electronic characterization of mesoscopic Hall bar devices fabricated from coupled InAs/GaSb quantum wells sandwiched between AlSb barriers, an emerging candidate for two-dimensional topological insulators. The electronic width of the etched structures was determined from the low field magneto-resistance peak, a characteristic signature of partially diffusive boundary scattering in the ballistic limit. In case of dry-etching the electronic width was found to decrease with electron density. In contrast, for wet etched devices it stayed constant with density. Moreover, the boundary scattering was found to be more specular for wet-etched devices, which may be relevant for studying topological edge states.Comment: 5 pages, 2 figure

    Phase coherence in the inelastic cotunneling regime

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    Two quantum dots with tunable mutual tunnel coupling have been embedded in a two-terminal Aharonov-Bohm geometry. Aharonov-Bohm oscillations are investigated in the cotunneling regime. Visibilities of more than 0.8 are measured indicating that phase-coherent processes are involved in the elastic and inelastic cotunneling. An oscillation-phase change of pi is detected as a function of bias voltage at the inelastic cotunneling onset.Comment: 4 pages, 4 figure
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