Time domain computational modelling of 1D arterial networks in monochorionic placentas

Published versio

Magnetic properties of exchange biased and of unbiased oxide/permalloy thin layers: a ferromagnetic resonance and Brillouin scattering study

Microstrip ferromagnetic resonance and Brillouin scattering are used to provide a comparative determination of the magnetic parameters of thin permalloy layers interfaced with a non-magnetic (Al2O3) or with an antiferromagnetic oxide (NiO). It is shown that the perpendicular anisotropy is monitored by an interfacial surface energy term which is practically independent of the nature of the interface. In the investigated interval of thicknesses (5-25 nm) the saturation magnetisation does not significantly differ from the reported one in bulk permalloy. In-plane uniaxial anisotropy and exchange-bias anisotropy are also derived from this study of the dynamic magnetic excitations and compared to our independent evaluations using conventional magnetometryComment: 7 pages, 6 figures, submited to Journal of Physics: Condensed Matte

Global-local visual processing impacts risk taking behaviors, but only at first

We investigated the impact of early visual processing on decision-making during unpredictable, risky situations. Participants undertook Navon’s (1977) task and attended to either global letters or local letters only, following which they completed the Balloon Analogue Risk Task (BART). It was observed that global-focused individuals made more balloon pumps during the BART (i.e., took more risk), whereas local-focused individuals took less risk, albeit only initially. The theory of predictive and reactive control systems (PARCS) provides an excellent account of the data. Implications and future directions are discussed

The activation energy for GaAs/AlGaAs interdiffusion

Copyright 1997 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Journal of Applied Physics 82, 4842 (1997) and may be found at

One-dimensional collision carts computer model and its design ideas for productive experiential learning

We develop an Easy Java Simulation (EJS) model for students to experience the physics of idealized one-dimensional collision carts. The physics model is described and simulated by both continuous dynamics and discrete transition during collision. In the field of designing computer simulations, we discuss briefly three pedagogical considerations such as 1) consistent simulation world view with pen paper representation, 2) data table, scientific graphs and symbolic mathematical representations for ease of data collection and multiple representational visualizations and 3) game for simple concept testing that can further support learning. We also suggest using physical world setup to be augmented complimentary with simulation while highlighting three advantages of real collision carts equipment like tacit 3D experience, random errors in measurement and conceptual significance of conservation of momentum applied to just before and after collision. General feedback from the students has been relatively positive, and we hope teachers will find the simulation useful in their own classes. 2015 Resources added: http://iwant2study.org/ospsg/index.php/interactive-resources/physics/02-newtonian-mechanics/02-dynamics/46-one-dimension-collision-js-model http://iwant2study.org/ospsg/index.php/interactive-resources/physics/02-newtonian-mechanics/02-dynamics/195-elastic-collisionComment: 6 pages, 8 figures, 1 table, 1 L. K. Wee, Physics Education 47 (3), 301 (2012); ISSN 0031-912

Experimental observation of the crystallization of a paired holon state

A new excitation is observed at 201 meV in the doped-hole ladder cuprate Sr$_{14}$Cu$_{24}$O$_{41}$, using ultraviolet resonance Raman scattering with incident light at 3.7 eV polarized along the direction of the rungs. The excitation is found to be of charge nature, with a temperature independent excitation energy, and can be understood via an intra-ladder pair-breaking process. The intensity tracks closely the order parameter of the charge density wave in the ladder (CDW$_L$), but persists above the CDW$_L$ transition temperature ($T_{CDW_L}$), indicating a strong local pairing above $T_{CDW_L}$. The 201 meV excitation vanishes in La$_{6}$Ca$_{8}$Cu$_{24}$O$_{41+\delta}$, and La$_{5}$Ca$_{9}$Cu$_{24}$O$_{41}$ which are samples with no holes in the ladders. Our results suggest that the doped holes in the ladder are composite bosons consisting of paired holons that order below $T_{CDW}$.Comment: Accepted for publication in Physical Review Letters (4 figures

The chaining lemma and its application

We present a new information-theoretic result which we call the Chaining Lemma. It considers a so-called “chain” of random variables, defined by a source distribution X(0)with high min-entropy and a number (say, t in total) of arbitrary functions (T1,…, Tt) which are applied in succession to that source to generate the chain (Formula presented). Intuitively, the Chaining Lemma guarantees that, if the chain is not too long, then either (i) the entire chain is “highly random”, in that every variable has high min-entropy; or (ii) it is possible to find a point j (1 ≤ j ≤ t) in the chain such that, conditioned on the end of the chain i.e. (Formula presented), the preceding part (Formula presented) remains highly random. We think this is an interesting information-theoretic result which is intuitive but nevertheless requires rigorous case-analysis to prove. We believe that the above lemma will find applications in cryptography. We give an example of this, namely we show an application of the lemma to protect essentially any cryptographic scheme against memory tampering attacks. We allow several tampering requests, the tampering functions can be arbitrary, however, they must be chosen from a bounded size set of functions that is fixed a prior

Cationic vacancy induced room-temperature ferromagnetism in transparent conducting anatase Ti_{1-x}Ta_xO_2 (x~0.05) thin films

We report room-temperature ferromagnetism in highly conducting transparent anatase Ti1-xTaxO2 (x~0.05) thin films grown by pulsed laser deposition on LaAlO3 substrates. Rutherford backscattering spectrometry (RBS), x-ray diffraction (XRD), proton induced x-ray emission (PIXE), x-ray absorption spectroscopy (XAS) and time-of-flight secondary ion mass spectrometry (TOF-SIMS) indicated negligible magnetic contaminants in the films. The presence of ferromagnetism with concomitant large carrier densities was determined by a combination of superconducting quantum interference device (SQUID) magnetometry, electrical transport measurements, soft x-ray magnetic circular dichroism (SXMCD), XAS, and optical magnetic circular dichroism (OMCD) and was supported by first-principle calculations. SXMCD and XAS measurements revealed a 90% contribution to ferromagnetism from the Ti ions and a 10% contribution from the O ions. RBS/channelling measurements show complete Ta substitution in the Ti sites though carrier activation was only 50% at 5% Ta concentration implying compensation by cationic defects. The role of Ti vacancy and Ti3+ was studied via XAS and x-ray photoemission spectroscopy (XPS) respectively. It was found that in films with strong ferromagnetism, the Ti vacancy signal was strong while Ti3+ signal was absent. We propose (in the absence of any obvious exchange mechanisms) that the localised magnetic moments, Ti vacancy sites, are ferromagnetically ordered by itinerant carriers. Cationic-defect-induced magnetism is an alternative route to ferromagnetism in wide-band-gap semiconducting oxides without any magnetic elements.Comment: 21 pages, 10 figures, to appear in Philosophical Transaction - Royal Soc.

Efficient public-key cryptography with bounded leakage and tamper resilience

We revisit the question of constructing public-key encryption and signature schemes with security in the presence of bounded leakage and tampering memory attacks. For signatures we obtain the first construction in the standard model; for public-key encryption we obtain the first construction free of pairing (avoiding non-interactive zero-knowledge proofs). Our constructions are based on generic building blocks, and, as we show, also admit efficient instantiations under fairly standard number-theoretic assumptions. The model of bounded tamper resistance was recently put forward by Damgård et al. (Asiacrypt 2013) as an attractive path to achieve security against arbitrary memory tampering attacks without making hardware assumptions (such as the existence of a protected self-destruct or key-update mechanism), the only restriction being on the number of allowed tampering attempts (which is a parameter of the scheme). This allows to circumvent known impossibility results for unrestricted tampering (Gennaro et al., TCC 2010), while still being able to capture realistic tampering attack

Oxygen Electromigration and Energy Band Reconstruction Induced by Electrolyte Field Effect at Oxide Interfaces

Electrolyte gating is a powerful means for tuning the carrier density and exploring the resultant modulation of novel properties on solid surfaces. However, the mechanism, especially its effect on the oxygen migration and electrostatic charging at the oxide heterostructures, is still unclear. Here we explore the electrolyte gating on oxygen-deficient interfaces between SrTiO3 (STO) crystals and LaAlO3 (LAO) overlayer through the measurements of electrical transport, X-ray absorption spectroscopy (XAS) and photoluminescence (PL) spectra. We found that oxygen vacancies (Ovac) were filled selectively and irreversibly after gating due to oxygen electromigration at the amorphous LAO/STO interface, resulting in a reconstruction of its interfacial band structure. Because of the filling of Ovac, the amorphous interface also showed an enhanced electron mobility and quantum oscillation of the conductance. Further, the filling effect could be controlled by the degree of the crystallinity of the LAO overlayer by varying the growth temperatures. Our results reveal the different effects induced by electrolyte gating, providing further clues to understand the mechanism of electrolyte gating on buried interfaces and also opening a new avenue for constructing high-mobility oxide interfaces.Comment: 5 figures; Supplementary materials included at the end of the main tex