A Hybrid-Based Framework for Constraint Satisfaction Optimization Problems

Scheduling and timetabling are commonly faced problems in most businesses and organizations. Both of these problems fall under the domain of constraint satisfaction optimization problems (CSOP), which involves finding a solution that satisfies all hard constraints, while at the same time maximizing some weighted sum of the soft constraints. Current constraint satisfaction techniques fare poorly in terms of soft constraints satisfied, while optimization techniques cannot ensure the feasibility of the final solution. In this paper, we propose a framework for CSOP that combines both constraint satisfaction and optimization techniques into a hybrid algorithm, called the combined method (CM). We test our framework on an exam-timetabling problem (ETTP) using actual data. Our results show that CM can be expected to produce better results than using a single technique alone

Charge Offset Stability in Si Single Electron Devices with Al Gates

We report on the charge offset drift (time stability) in Si single electron devices (SEDs) defined with aluminum (Al) gates. The size of the charge offset drift (0.15 $e$) is intermediate between that of Al/AlO$_x$/Al tunnel junctions (greater than 1 $e$) and Si SEDs defined with Si gates (0.01 $e$). This range of values suggests that defects in the AlO$_x$ are the main cause of the charge offset drift instability

Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability

Surface transfer doping of hydrogen-terminated diamond has been achieved utilising V2O5 as a surface electron accepting material. Contact between the oxide and diamondsurface promotes the transfer of electrons from the diamond into the V2O5 as revealed by the synchrotron-based high resolution photoemission spectroscopy. Electrical characterization by Hall measurement performed before and after V2O5 deposition shows an increase in hole carrier concentration in the diamond from 3.0 × 1012 to 1.8 × 1013 cm−2 at room temperature. High temperature Hall measurements performed up to 300 °C in atmosphere reveal greatly enhanced thermal stability of the hole channel produced using V2O5 in comparison with an air-induced surface conduction channel. Transfer doping of hydrogen-terminated diamond using high electron affinity oxides such as V2O5 is a promising approach for achieving thermally stable, high performance diamond based devices in comparison with air-induced surface transfer dopin

The Color Octet Effect from e+e−→J/ψ+X+γe^+ e^-\to{J/\psi}+X+\gamma at B Factory

We study the initial state radiation process $e^+ e^-\to{J/\psi}+X+\gamma$ for $J/\psi$ production at B factory, and find the cross section is 61% larger than it's Born one for color octet part and is about half as it's Born one for color singlet part. Furthermore, the color singlet and color octet signal are very clearly separated in it's $E_\gamma$ spectra due to kinematics difference. We suggest to measure this $E_\gamma$ spectra at B factory to determine the color octet effect.Comment: 4 pages, 4 figures and 1 tabl

CAPIR: Collaborative Action Planning with Intention Recognition

We apply decision theoretic techniques to construct non-player characters that are able to assist a human player in collaborative games. The method is based on solving Markov decision processes, which can be difficult when the game state is described by many variables. To scale to more complex games, the method allows decomposition of a game task into subtasks, each of which can be modelled by a Markov decision process. Intention recognition is used to infer the subtask that the human is currently performing, allowing the helper to assist the human in performing the correct task. Experiments show that the method can be effective, giving near-human level performance in helping a human in a collaborative game.Comment: 6 pages, accepted for presentation at AIIDE'1

STM studies of epitaxial graphene

This article reviews the use of scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) to characterize the physical and electronic properties of epitaxial graphene. Topographical variations revealed by STM allow the determination of the number of graphene layers and the detection of lattice mismatch between the graphene and the substrate, as well as rotational disorder. STS allows the local electronic characterization of graphene. STM/STS can also be used to perform local studies of graphene modification through processes such as atomic/molecular adsorption and intercalation