1,986 research outputs found

    Calculated performance, stability and maneuverability of high-speed tilting-prop-rotor aircraft

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    The feasibility of operating tilting-prop-rotor aircraft at high speeds is examined by calculating the performance, stability, and maneuverability of representative configurations. The rotor performance is examined in high-speed cruise and in hover. The whirl-flutter stability of the coupled-wing and rotor motion is calculated in the cruise mode. Maneuverability is examined in terms of the rotor-thrust limit during turns in helicopter configuration. Rotor airfoils, rotor-hub configuration, wing airfoil, and airframe structural weights representing demonstrated advance technology are discussed. Key rotor and airframe parameters are optimized for high-speed performance and stability. The basic aircraft-design parameters are optimized for minimum gross weight. To provide a focus for the calculations, two high-speed tilt-rotor aircraft are considered: a 46-passenger, civil transport and an air-combat/escort fighter, both with design speeds of about 400 knots. It is concluded that such high-speed tilt-rotor aircraft are quite practical

    Electric field dependence of spin coherence in (001) GaAs/AlGaAs quantum wells

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    Conduction electron spin lifetimes (T1T_1) and spin coherence times (T2T_2) are strongly modified in semiconductor quantum wells by electric fields. Quantitative calculations in GaAs/AlGaAs quantum wells at room temperature show roughly a factor of four enhancement in the spin lifetimes at optimal values of the electric fields. The much smaller enhancement compared to previous calculations is due to overestimates of the zero-field spin lifetime and the importance of nonlinear effects.Comment: 5 pages, 3 figure

    Evaluation of Rotor Structural and Aerodynamic Loads using Measured Blade Properties

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    The structural properties of Higher harmonic Aeroacoustic Rotor Test (HART I) blades have been measured using the original set of blades tested in the wind tunnel in 1994. A comprehensive rotor dynamics analysis is performed to address the effect of the measured blade properties on airloads, blade motions, and structural loads of the rotor. The measurements include bending and torsion stiffness, geometric offsets, and mass and inertia properties of the blade. The measured properties are correlated against the estimated values obtained initially by the manufacturer of the blades. The previously estimated blade properties showed consistently higher stiffnesses, up to 30% for the flap bending in the blade inboard root section. The measured offset between the center of gravity and the elastic axis is larger by about 5% chord length, as compared with the estimated value. The comprehensive rotor dynamics analysis was carried out using the measured blade property set for HART I rotor with and without HHC (Higher Harmonic Control) pitch inputs. A significant improvement on blade motions and structural loads is obtained with the measured blade properties

    Non-magnetic semiconductor spin transistor

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    We propose a spin transistor using only non-magnetic materials that exploits the characteristics of bulk inversion asymmetry (BIA) in (110) symmetric quantum wells. We show that extremely large spin splittings due to BIA are possible in (110) InAs/GaSb/AlSb heterostructures, which together with the enhanced spin decay times in (110) quantum wells demonstrates the potential for exploitation of BIA effects in semiconductor spintronics devices. Spin injection and detection is achieved using spin-dependent resonant interband tunneling and spin transistor action is realized through control of the electron spin lifetime in an InAs lateral transport channel using an applied electric field (Rashba effect). This device may also be used as a spin valve, or a magnetic field sensor. The electronic structure and spin relaxation times for the spin transistor proposed here are calculated using a nonperturbative 14-band k.p nanostructure model.Comment: Accepted for publication in Applied Physics Letter

    Magnetic-field dependence of electron spin relaxation in n-type semiconductors

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    We present a theoretical investigation of the magnetic field dependence of the longitudinal (T1T_1) and transverse (T2T_2) spin relaxation times of conduction band electrons in n-type III-V semiconductors. In particular, we find that the interplay between the Dyakonov-Perel process and an additional spin relaxation channel, which originates from the electron wave vector dependence of the electron gg-factor, yields a maximal T2T_2 at a finite magnetic field. We compare our results with existing experimental data on n-type GaAs and make specific additional predictions for the magnetic field dependence of electron spin lifetimes.Comment: accepted for publication in PRB, minor changes to previous manuscrip

    Electron Spin Decoherence in Bulk and Quantum Well Zincblende Semiconductors

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    A theory for longitudinal (T1) and transverse (T2) electron spin coherence times in zincblende semiconductor quantum wells is developed based on a non-perturbative nanostructure model solved in a fourteen-band restricted basis set. Distinctly different dependences of coherence times on mobility, quantization energy, and temperature are found from previous calculations. Quantitative agreement between our calculations and measurements is found for GaAs/AlGaAs, InGaAs/InP, and GaSb/AlSb quantum wells.Comment: 11 pages, 3 figure
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