2,100 research outputs found
Calculated performance, stability and maneuverability of high-speed tilting-prop-rotor aircraft
The feasibility of operating tilting-prop-rotor aircraft at high speeds is examined by calculating the performance, stability, and maneuverability of representative configurations. The rotor performance is examined in high-speed cruise and in hover. The whirl-flutter stability of the coupled-wing and rotor motion is calculated in the cruise mode. Maneuverability is examined in terms of the rotor-thrust limit during turns in helicopter configuration. Rotor airfoils, rotor-hub configuration, wing airfoil, and airframe structural weights representing demonstrated advance technology are discussed. Key rotor and airframe parameters are optimized for high-speed performance and stability. The basic aircraft-design parameters are optimized for minimum gross weight. To provide a focus for the calculations, two high-speed tilt-rotor aircraft are considered: a 46-passenger, civil transport and an air-combat/escort fighter, both with design speeds of about 400 knots. It is concluded that such high-speed tilt-rotor aircraft are quite practical
Electric field dependence of spin coherence in (001) GaAs/AlGaAs quantum wells
Conduction electron spin lifetimes () and spin coherence times ()
are strongly modified in semiconductor quantum wells by electric fields.
Quantitative calculations in GaAs/AlGaAs quantum wells at room temperature show
roughly a factor of four enhancement in the spin lifetimes at optimal values of
the electric fields. The much smaller enhancement compared to previous
calculations is due to overestimates of the zero-field spin lifetime and the
importance of nonlinear effects.Comment: 5 pages, 3 figure
Non-magnetic semiconductor spin transistor
We propose a spin transistor using only non-magnetic materials that exploits
the characteristics of bulk inversion asymmetry (BIA) in (110) symmetric
quantum wells. We show that extremely large spin splittings due to BIA are
possible in (110) InAs/GaSb/AlSb heterostructures, which together with the
enhanced spin decay times in (110) quantum wells demonstrates the potential for
exploitation of BIA effects in semiconductor spintronics devices. Spin
injection and detection is achieved using spin-dependent resonant interband
tunneling and spin transistor action is realized through control of the
electron spin lifetime in an InAs lateral transport channel using an applied
electric field (Rashba effect). This device may also be used as a spin valve,
or a magnetic field sensor. The electronic structure and spin relaxation times
for the spin transistor proposed here are calculated using a nonperturbative
14-band k.p nanostructure model.Comment: Accepted for publication in Applied Physics Letter
Evaluation of Rotor Structural and Aerodynamic Loads using Measured Blade Properties
The structural properties of Higher harmonic Aeroacoustic Rotor Test (HART I) blades have been measured using the original set of blades tested in the wind tunnel in 1994. A comprehensive rotor dynamics analysis is performed to address the effect of the measured blade properties on airloads, blade motions, and structural loads of the rotor. The measurements include bending and torsion stiffness, geometric offsets, and mass and inertia properties of the blade. The measured properties are correlated against the estimated values obtained initially by the manufacturer of the blades. The previously estimated blade properties showed consistently higher stiffnesses, up to 30% for the flap bending in the blade inboard root section. The measured offset between the center of gravity and the elastic axis is larger by about 5% chord length, as compared with the estimated value. The comprehensive rotor dynamics analysis was carried out using the measured blade property set for HART I rotor with and without HHC (Higher Harmonic Control) pitch inputs. A significant improvement on blade motions and structural loads is obtained with the measured blade properties
Magnetic-field dependence of electron spin relaxation in n-type semiconductors
We present a theoretical investigation of the magnetic field dependence of
the longitudinal () and transverse () spin relaxation times of
conduction band electrons in n-type III-V semiconductors. In particular, we
find that the interplay between the Dyakonov-Perel process and an additional
spin relaxation channel, which originates from the electron wave vector
dependence of the electron -factor, yields a maximal at a finite
magnetic field. We compare our results with existing experimental data on
n-type GaAs and make specific additional predictions for the magnetic field
dependence of electron spin lifetimes.Comment: accepted for publication in PRB, minor changes to previous manuscrip
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A simple, reliable and robust reinforcement method for the fabrication of (RE)–Ba–Cu–O bulk superconductors
Abstract: Bulk high temperature superconductors (HTS) based on the rare-earth barium cuprates [(RE)BCO] have the potential to be applied in a variety of engineering and technological applications such as trapped field magnets, rotating electrical machines, magnetic bearings and flywheel energy storage systems. The key materials figure of merit for most practical applications of bulk superconductors is simply the product of the maximum current density that can be supported, which correlates directly with the maximum achievable trapped magnetic field, and the physical length scale over which the current flows. Unfortunately, however, bulk (RE)BCO superconductors exhibit relatively poor mechanical properties due to their inherent ceramic nature. Consequently, the performance of these materials as trapped field magnets is limited significantly by their tensile strength, rather than critical current and size, given that the relatively large Lorentz forces produced in the generation of large magnetic fields can lead to catastrophic mechanical failure. In the present work, we describe a simple, but effective and reliable reinforcement methodology to enhance the mechanical properties of (RE)BCO bulk superconductors by incorporating hybrid SiC fibres consisting of a tungsten core with SiC cladding within the bulk microstructure. An improvement in tensile strength by up to 40% has been achieved via this process and, significantly, without compromising the superconducting performance of the bulk material
Electron Spin Decoherence in Bulk and Quantum Well Zincblende Semiconductors
A theory for longitudinal (T1) and transverse (T2) electron spin coherence
times in zincblende semiconductor quantum wells is developed based on a
non-perturbative nanostructure model solved in a fourteen-band restricted basis
set. Distinctly different dependences of coherence times on mobility,
quantization energy, and temperature are found from previous calculations.
Quantitative agreement between our calculations and measurements is found for
GaAs/AlGaAs, InGaAs/InP, and GaSb/AlSb quantum wells.Comment: 11 pages, 3 figure
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