Use of AlInN layers in optical monitoring of growth of GaN-based structures on free-standing GaN substrates

When lattice matched to GaN, the AlInN ternary alloy has a refractive index ~7% lower than that of GaN. This characteristic can be exploited to perform in situ reflectometry during epitaxial growth of GaN-based multilayer structures on free-standing GaN substrates, by insertion of a suitable Al0.82In0.18N layer. The real-time information on growth rates and cumulative layer thicknesses thus obtainable is particularly valuable in the growth of optical resonant cavity structures. We illustrate this capability with reference to the growth of InGaN/GaN multiple quantum-well structures, including a doubly periodic structure with relatively thick GaN spacer layers between groups of wells. Al0.82In0.18N insertion layers can also assist in the fabrication of resonant cavity structures in postgrowth processing, for example, acting as sacrificial layers in a lift-off process exploiting etch selectivity between Al0.82In0.18N and GaN

Raman-scattering study of the InGaN alloy over the whole composition range

We present Raman-scattering measurements on InxGa1−xN over the entire composition range of the alloy. The frequencies of the A1(LO) and E2 modes are reported and show a good agreement with the one-mode behavior dispersion predicted by the modified random-element isodisplacement model. The A1(LO) mode displays a high intensity relative to the E2 mode due to resonant enhancement. For above band-gap excitation, the A1(LO) peak displays frequency shifts as a function of the excitation energy due to selective excitation of regions with different In contents, and strong multiphonon scattering up to 3LO is observed in outgoing resonance conditions

Photoluminescence of near-lattice-matched GaN/AlInN quantum wells grown on free-standing GaN and on sapphire substrates

Near-lattice-matched GaN/Al1−xInxN single quantum wells, grown using both free-standing GaN and conventional GaN-on-sapphire substrates, are studied by photoluminescence (PL) and PL excitation spectroscopies. PL spectra distinguish luminescence originating in the wells, barriers, and underlying GaN buffer layers. The spectra also reveal significant differences between structures grown simultaneously on the different substrates. The quantum well transition energy decreases as the well width increases due to the intense in-built electric fields, estimated to be 3.0±0.5 MeV/cm, that persist in strain free GaN/Al1−xInxN. Screening of these fields is studied using the excitation power dependence of the P

Optical spectroscopy of gan microcavities with thicknesses controlled using a plasma etch-back

The effect of an etch-back step to control the cavity length within GaN-based microcavities formed between two dielectric Bragg mirrors was investigated using photoluminescence and reflectivity. The structures are fabricated using a combination of a laser lift-off technique to separate epitaxial III-N layers from their sapphire substrates and electron-beam evaporation to deposit silica/zirconia multilayer mirrors. The photoluminescence measurements reveal cavity modes from both etched and nonetched microcavities. Similar cavity finesses are measured for 2.0 and 0.8 mm GaN cavities fabricated from the same wafer, indicating that the etchback has had little effect on the microcavity quality. For InGaN quantum well samples the etchback is shown to allow controllable reduction of the cavity length. Two etch steps of 100 nm are demonstrated with an accuracy of approximately 5%. The etchback, achieved using inductively coupled plasma and wet chemical etching, allows removal of the low-quality GaN nucleation layer, control of the cavity length, and modification of the surface resulting from lift-off

(In,Ga)N/GaN microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer

Comparable microcavities with 3/2 (~240 nm) active regions containing distributed (In,Ga)N quantum wells, grown on GaN substrates and bounded by two dielectric mirrors, have been fabricated by two different routes: one using laser lift-off to process structures grown on GaN-on-sapphire templates and the second using freestanding GaN substrates, which are initially processed by mechanical thinning. Both exploit the properties of an Al0.83In0.17N layer, lattice matched to the GaN substrate and spacer layers. In both cases cavity quality factors >400 are demonstrated by measurements of the cavity-filtered room-temperature excitonic emission near 410 nm

Structural and optical properties of MOCVD AllnN epilayers

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Distortions of Experimental Muon Arrival Time Distributions of Extensive Air Showers by the Observation Conditions

Event-by-event measured arrival time distributions of Extensive Air Shower (EAS) muons are affected and distorted by various interrelated effects which originate from the time resolution of the timing detectors, from fluctuations of the reference time and the number (multiplicity) of detected muons spanning the arrival time distribution of the individual EAS events. The origin of these effects is discussed, and different correction procedures, which involve detailed simulations, are proposed and illustrated. The discussed distortions are relevant for relatively small observation distances (R < 200 m) from the EAS core. Their significance decreases with increasing observation distance and increasing primary energies. Local arrival time distributions which refer to the observed arrival time of the first local muon prove to be less sensitive to the mass of the primary. This feature points to the necessity of arrival time measurements with additional information on the curvature of the EAS disk.Comment: 10 pages, 6 figures, accepted for publication in Astroparticle Physic

Photoluminescence and phonon satellites of single InGaN/GaN quantum wells with varying GaN cap thickness

Variations in thickness of the GaN caps above single InGaN quantum wells have been studied using photoluminescence spectroscopy. Data are presented from two series of samples designed to promote energy transfer to luminescent species on the surface. Improvements in the optical properties as the GaN cap thickness increases from 2.5 to 15 nm are accompanied by clear changes in the intensity of the LO-phonon satellites. Analysis of the strength of successive phonon satellites and the associated Huang-Rhys factors indicates that the amount of localization of the excitons is increased for the thinner cap samples. Surface depletion fields are also considered

The Gribov-Zwanziger action in the presence of the gauge invariant, nonlocal mass operator Tr∫d4xFμν(D2)−1FμνTr \int d^4x F_{\mu\nu} (D^2)^{-1} F_{\mu\nu} in the Landau gauge

We prove that the nonlocal gauge invariant mass dimension two operator $F_{\mu\nu} (D^2)^{-1} F_{\mu\nu}$ can be consistently added to the Gribov-Zwanziger action, which implements the restriction of the path integral's domain of integration to the first Gribov region when the Landau gauge is considered. We identify a local polynomial action and prove the renormalizability to all orders of perturbation theory by employing the algebraic renormalization formalism. Furthermore, we also pay attention to the breaking of the BRST invariance, and to the consequences that this has for the Slavnov-Taylor identity.Comment: 30 page