Pathological Response in Resectable Non-small Cell Lung Cancer: A Systematic Literature Review and Meta-Analysis

BACKGROUND: Surrogate endpoints for overall survival in patients with resectable non-small cell lung cancer receiving neoadjuvant therapy are needed to provide earlier treatment outcome indicators and accelerate drug approval. This study\u27s main objectives were to investigate the association among pathological complete response, major pathological response, event-free survival and overall survival and to determine whether treatment effects on pathological complete response and event-free survival correlate with treatment effects on overall survival. METHODS: A comprehensive systematic literature review was conducted to identify neoadjuvant studies in resectable non-small cell lung cancer. Analysis at the patient level using frequentist and Bayesian random effects (hazard ratio [HR] for overall survival or event-free survival by pathological complete response or major pathological response status, yes vs no) and at the trial level using weighted least squares regressions (hazard ratio for overall survival or event-free survival vs pathological complete response, by treatment arm) were performed. RESULTS: In both meta-analyses, pathological complete response yielded favorable overall survival compared with no pathological complete response (frequentist, 20 studies and 6530 patients: HR = 0.49, 95% confidence interval = 0.42 to 0.57; Bayesian, 19 studies and 5988 patients: HR = 0.48, 95% probability interval = 0.43 to 0.55) and similarly for major pathological response (frequentist, 12 studies and 1193 patients: HR = 0.36, 95% confidence interval = 0.29 to 0.44; Bayesian, 11 studies and 1018 patients: HR = 0.33, 95% probability interval = 0.26 to 0.42). Across subgroups, estimates consistently showed better overall survival or event-free survival in pathological complete response or major pathological response compared with no pathological complete response or no major pathological response. Trial-level analyses showed a moderate to strong correlation between event-free survival and overall survival hazard ratios (R2 = 0.7159) but did not show a correlation between treatment effects on pathological complete response and overall survival or event-free survival. CONCLUSION: There was a strong and consistent association between pathological response and survival and a moderate to strong correlation between event-free survival and overall survival following neoadjuvant therapy for patients with resectable non-small cell lung cancer

Realization of Minimum and Maximum Gate Function in Ta2_{2}O5_{5}-based Memristive Devices

Redox-based resistive switching devices (ReRAM) are considered key enablers for future non-volatile memory and logic applications. Functionally enhanced ReRAM devices could enable new hardware concepts, e.g. logic-in-memory or neuromorphic applications. In this work, we demonstrate the implementation of ReRAM-based fuzzy logic gates using Ta2O5 devices to enable analogous Minimum and Maximum operations. The realized gates consist of two anti-serially connected ReRAM cells offering two inputs and one output. The cells offer an endurance up to 106 cycles. By means of exemplary input signals, each gate functionality is verified and signal constraints are highlighted. This realization could improve the efficiency of analogous processing tasks such as sorting networks in the future

Перспективы развития PR-коммуникаций ОАО «Ростелеком» (г. Томск)

РЕФЕРАТ Объем работы – 90стр., таблиц – 7, рисунков – 13, источников – 57. Перспективы развития PR– коммуникаций на примере развития ПАО Ростелеком г. Томска Актуальность: В настоящее время в oбществе начала XXI века современная экономическая стратегия, ориентированная на широкое практическое применение новых наукоемких технологий, oбусловила бурное развитие процесса освоения и распространения инноваций в области информационно – коммуникационных технологий. С развитием сети Интернет и превращением ее в новый канал коммуникации стало возможным говорить о PR в Интернете. PR в Интернете – особая составляющая PR: наиболее молодая и, как следствие, одна из наиболее перспективных. Oднако сегодня существует ряд трудностей, препятствующих ведению высокопрофессиональной PR– деятельности в новом информационно– коммуникационном пространстве под названием «Интернет», эти трудности проявляют себя в настоящей ситуации, когда существующее научное знание оказывается недостаточным для решения PR– задач в условиях становления информационного oбщества. Цель дипломной работы – исследование сетевых ресурсов PR– коммуникаций. Объект дипломной работы: ПАО Ростелеком г. Томск. Предмет – использование перспективных PR– коммуникаций в компании ПАО Ростелеком г. Томска. Методы: общенаучные методы анализа и синтеза, обобщения. Новизна и практическая значимость дипломной работы: выявлены особенности осуществления связей с общественностью федерального естественного монополиста предоставляющего услуги провайдера и разработан опросный лист, который может быть использован для оценки общественного мнения о деятельности ПАО «Ростелеком» в любом населённом пункте РФ, а также любым Интернет – провайдером.ABSTRACT The amount of work – 90стр., tables – 7, drawings – 13, source – 57. Prospects of development of PR– communication on the example of the development PJSC Rostelecom in Tomsk Relevance: currently in society beginning twenty-first century of modern economic strategy focused on the broad practical application of new technologies, led to the rapid development of the process of development and diffusion of innovation in the field of information and communication technologies. With the development of the Internet and transforms it into a new channel of communication it became possible to talk about PR on the Internet. PR online – PR a special component: the youngest and, as a consequence, one of the most promising. Today, however, there are a number of obstacles to maintaining a highly professional PR activity in the new information and communication space called "Internet", these difficulties manifest themselves in the present situation where existing scientific knowledge is insufficient for solving PR– tasks in the conditions of information society formation. The aim of the thesis is a study of network resources PR– communications. The object of the thesis: PJSC Rostelecom in Tomsk. Subject – using the perspective of PR– communications company PJSC Rostelecom in Tomsk. Methods: General scientific methods of analysis and synthesis, generalization. The novelty and practical significance of the thesis: peculiarities of implementation of public relations of Federal natural monopoly rendering services provider and a questionnaire was developed, which can be used to assess public opinion on the activities of the PJSC "Rostelecom" in any settlement of the Russian Federation, as well as any Internet provider

Current Compliance-Dependent Nonlinearity in TiO2 ReRAM

Nonvolatile redox-based resistive RAM (ReRAM) is considered to be a promising candidate for passive nanocrossbar integration. For this application, a high degree of nonlinearity in I-V characteristics of the ReRAM device is required. In this letter, the nonlinearity parameter as a function of forming/SET current compliance in a MOSFET-integrated TiN/TiO2/Ti/Pt ReRAM device is investigated. The nonlinearity parameter in the ReRAM device improves at the lower SET current compliance. This is due to scaling down the conductive filaments during the forming and the SET process. The nonlinearity is further increased by scaling down the oxide thickness that is accompanied by a reduction of the switching current

Ultrafast switching in Ta2O5-based resistive memories

To understand the switching mechanism in resistive switching memories it is important to study the switching kinetics over several orders in time. One open question is the upper limit of the switching speed. In this study, we present a switching kinetics study on Ta2O5-based resistive memories that spans over 15 order of magnitude in time in a single device. Using coplanar waveguide (CPW) devices switching times less than 35 ps are realized, which are still limited by the measurement setup. In addition, the switching event could be unraveled in the sub-ns regime by analyses of the current transients. The switching kinetics of the CPW devices show the same characteristic as 80 × 80 nm2 crossbar devices. Furthermore, we demonstrate multilevel switching with ultrafast sub-ns pulses by variation of the voltage amplitude

Contact mode potentiometric measurements with an atomic force microscope on high resistive perovskite thin films

We have investigated the potential distribution on barium titanate thin filius with ail atomic force microscope in contact mode to find answers to the important question of local electric conductivity. A detailed knowledge about the electrical transport mechanisms is very important to receive a sound operation for highly integrated circuits such as non-volatile memory cells. With this paper we present an advanced method to perform these potential scans in galvanic contact. Key element of the set-up is an optimized electrometer amplifier which has an electronically reduced input capacitance avoiding the work function influence on the surface potential scan. To demonstrate the capability of our set-up we present example measurements performed on thermally reduced BaTiO3 thin films. (c) 2005 Elsevier Ltd. All rights reserved

Nonlinearity analysis of TaOX redox-based RRAM

For the passive crossbar integration of redox-based resistive RAM (ReRAM), understanding the nonlinearity (NL) of the I–V characteristics and its impact on the device parameters are highly required. Here, we report the NL of TiN/TaOx/Ta/Pt ReRAM for different switching oxide thicknesses (7.0 nm vs. 3.5 nm) and various device sizes (85 nm × 85 nm to 135 nm × 135 nm) as function of SET current compliance levels as well as the SET current compliance impact on the resistance ratio (off to on). The NL in pulsed AC mode improves with lower current compliance levels regardless of device area. At extremely low compliance level, the device shows the highest NL of 12 in the AC mode. The resistance ratio and the NL parameter in the ReRAM device are observed to be the competing factors as the resistance ratio degrades with improvement of the NL at the lower current compliance level. However, the NL parameter is independent of the switching layer thickness