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    Axisymmetric photonic structures with PT-symmetry

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    Copyright 2016 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.PT-symmetric structures in photonic crystals, combining refractive index and gain-loss modulations is becoming a research field with increasing interest due to the light directionality induced by these particular potentials. Here, we consider PT-symmetric potentials with axial symmetry to direct light to the crystal central point obtaining a localization effect. The axial and PT-symmetric potential intrinsically generates an exceptional central point in the photonic crystal by the merge of both symmetries. This particular point in the crystal lattice causes field amplitude gradients with exponential slopes around the crystal center. The field localization strongly depends on the phase of the central point and on the complex amplitude of the PT-potential. The presented work analyzes in a first stage 1D linear PT-axisymmetric crystals and the role of the central point phase that determines the defect character, i.e. refractive index defect, gain-loss defect or a combination of both. The interplay of the directional light effect induced by the PT-symmetry and the light localization around the central point through the axial symmetry enhances localization and allows higher field concentration for certain phases. The linearity of the studied crystals introduces an exponential growth of the field that mainly depends on the complex amplitude of the potential. The work is completed by the analysis of 2D PT-axisymmetric potentials showing different spatial slopes and growth rates caused by symmetry reasons.Peer ReviewedPostprint (published version

    Multiqubit quantum phase gate using four-level superconducting quantum interference devices coupled to superconducting resonator

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    In this paper, we propose a scheme to realize three-qubit quantum phase gate of one qubit simultaneously controlling two target qubits using four-level superconducting quantum interference devices (SQUIDs) coupled to a superconducting resonator. The two lowest levels |0> and |1> of each SQUID are used to represent logical states while the higher energy levels |2> and |3> are utilized for gate realization. Our scheme does not require adiabatic passage, second order detuning, and the adjustment of the level spacing during gate operation which reduce the gate time significantly. The scheme is generalized for an arbitrary n-qubit quantum phase gate. We also apply the scheme to implement three-qubit quantum Fourier transform. key words: quantum phase gate, superconducting quantum interference devices (SQUIDs), superconducting resonator, quantum Fourier transformComment: 14 pages, 7 figure
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