Europium nitride: A novel diluted magnetic semiconductor

Europium nitride is semiconducting and contains non-magnetic \3+, but sub-stoichiometric EuN has Eu in a mix of 2+ and 3+ charge states. We show that at \2+ ~concentrations near 15-20% EuN is ferromagnetic with a Curie temperature as high as 120 K. The \3+ ~polarization follows that of the \2+, confirming that the ferromagnetism is intrinsic to the EuN which is thus a novel diluted magnetic semiconductor. Transport measurements shed light on the likely exchange mechanisms.Comment: 5 page

Spin/orbit moment imbalance in the near-zero moment ferromagnetic semiconductor SmN

SmN is ferromagnetic below 27 K, and its net magnetic moment of 0.03 Bohr magnetons per formula unit is one of the smallest magnetisations found in any ferromagnetic material. The near-zero moment is a result of the nearly equal and opposing spin and orbital moments in the 6H5/2 ground state of the Sm3+ ion, which leads finally to a nearly complete cancellation for an ion in the SmN ferromagnetic state. Here we explore the spin alignment in this compound with X-ray magnetic circular dichroism at the Sm L2,3 edges. The spectral shapes are in qualitative agreement with computed spectra based on an LSDA+U (local spin density approximation with Hubbard-U corrections) band structure, though there remain differences in detail which we associate with the anomalous branching ratio in rare-earth L edges. The sign of the spectra determine that in a magnetic field the Sm 4f spin moment aligns antiparallel to the field; the very small residual moment in ferromagnetic SmN aligns with the 4f orbital moment and antiparallel to the spin moment. Further measurements on very thin (1.5 nm) SmN layers embedded in GdN show the opposite alignment due to a strong Gd-Sm exchange, suggesting that the SmN moment might be further reduced by about 0.5 % Gd substitution

Optical Response of DyN

We report measurements of the optical response of polycrystalline DyN thin films. The frequency-dependent complex refractive index in the near IR-visible-near UV was determined by fitting reflection/transmission spectra. In conjunction with resistivity measurements these identify DyN as a semiconductor with 1.2 eV optical gap. When doped by nitrogen vacancies it shows free carrier absorption and a blue-shifted gap associated with the Moss-Burstein effect. The refractive index of 2.0+/-0.1 depends only weakly on energy. Far infrared reflectivity data show a polar phonon of frequency 280 cm-1 and dielectric strength delta epsilon= 20

Reduction of anomalous heating in an in-situ-cleaned ion trap

Anomalous heating of trapped atomic ions is a major obstacle to their use as quantum bits in a scalable quantum computer. The physical origin of this heating is not fully understood, but experimental evidence suggests that it is caused by electric-field noise emanating from the surface of the trap electrodes. In this study, we have investigated the role that adsorbates on the electrodes play by identifying contaminant overlayers, developing an in situ argon-ion beam cleaning procedure, and measuring ion heating rates before and after cleaning the trap electrodes' surfaces. We find a reduction of two orders of magnitude in heating rate after cleaning.Comment: 7 pages, 1 figur

AEGIS at CERN: Measuring Antihydrogen Fall

The main goal of the AEGIS experiment at the CERN Antiproton Decelerator is the test of fundamental laws such as the Weak Equivalence Principle (WEP) and CPT symmetry. In the first phase of AEGIS, a beam of antihydrogen will be formed whose fall in the gravitational field is measured in a Moire' deflectometer; this will constitute the first test of the WEP with antimatter.Comment: Presented at the Fifth Meeting on CPT and Lorentz Symmetry, Bloomington, Indiana, June 28-July 2, 201