The new AM CVn star in Hydra

High speed photometry of the new AM CVn star in Hya (previously known as SN2003aw), spectroscopically identified by Chornock & Filippenko, shows it to have a superhump period of 2041.5 +/- 0.3 s. We find a range of brightness from V ~ 16.5 to 20.3, presumably caused by variations in the rate of mass transfer. In the intermediate state the system cycles in brightness with a period of ~ 16 h and range >= 0.4 mag. There are sidebands to the principal frequencies in the Fourier transform which have constant frequency difference from the superhump harmonics.Comment: 5 pages, 6 figures. Accepted for publication in MNRA

Rapid Oscillations in Cataclysmic Variables, and a Comparison with X-Ray Binaries

We compare some of the properties of rapid oscillations in cataclysmic variables and X-Ray binaries. In addition to the earlier recognition that both types possess the same correlation between high and low frequency quasi-periodic oscillations, we have now found that the dwarf nova VW Hyi in its late stages of outburst shows the 1:2:3 oscillations harmonics that are seen in some neutron star and black hole X-Ray binaries. We point out that the behaviour of the dwarf nova WZ Sge has some similarities to those of accreting millisecond pulsars.Comment: 10 pages, 4 figures (needs AIP style file). To appear in the conference proceedings of `Interacting Binaries: Accretion, Evolution & Outcomes' (Cefalu, July 4-10 2004

Design and Manufacturing of Silicon PIN Diodes Utilizing Silicon on Insulator Technology

The goal of this project was to design a process to form a PIN structure on silicon on insulator (SOl) wafers, IBIS donated the wafers for this project. Using a combination of standard and novel wafer processing techniques allowed for successful completion of the device. These techniques involved a four-layer mask process that utilized both state of the art and older tool sets. A methodology for lithographic processing of wafer pieces has been expanded upon and documented for future use. Testing demonstrated resistor like behavior opposed to the expected diode behavior. This result is indicative of a short through the device. The observed undercutting of the buried oxide is the most likely culprit. Undercutting would allow the surface silicon to come in contact with the bulk silicon creating an electrical path around the intrinsic region of the device