An ultra scale-down analysis of the recovery by dead-end centrifugation of human cells for therapy.

An ultra scale-down method is described to determine the response of cells to recovery by dead-end (batch) centrifugation under commercially defined manufacturing conditions. The key variables studied are the cell suspension hold time prior to centrifugation, the relative centrifugal force (RCF), time of centrifugation, cell pellet resuspension velocities, and number of resuspension passes. The cell critical quality attributes studied are the cell membrane integrity and the presence of selected surface markers. Greater hold times and higher RCF values for longer spin times all led to the increased loss of cell membrane integrity. However, this loss was found to occur during intense cell resuspension rather than the preceding centrifugation stage. Controlled resuspension at low stress conditions below a possible critical stress point led to essentially complete cell recovery even at conditions of extreme centrifugation (e.g., RCF of 10000 g for 30 mins) and long (~2 h) holding times before centrifugation. The susceptibility to cell loss during resuspension under conditions of high stress depended on cell type and the age of cells before centrifugation and the level of matrix crosslinking within the cell pellet as determined by the presence of detachment enzymes or possibly the nature of the resuspension medium. Changes in cell surface markers were significant in some cases but to a lower extent than loss of cell membrane integrity. Biotechnol. Bioeng. 2015;112: 997-1011. © 2014 Wiley Periodicals, Inc

Interactive flight control system analysis program

A summary of the development, use, and documentation of the interactive software (DIGIKON IV) for flight control system analyses is presented. A list of recommendations for future development is also included

Melt-growth dynamics in CdTe crystals

We use a new, quantum-mechanics-based bond-order potential (BOP) to reveal melt-growth dynamics and fine-scale defect formation mechanisms in CdTe crystals. Previous molecular dynamics simulations of semiconductors have shown qualitatively incorrect behavior due to the lack of an interatomic potential capable of predicting both crystalline growth and property trends of many transitional structures encountered during the melt $\rightarrow$ crystal transformation. Here we demonstrate successful molecular dynamics simulations of melt-growth in CdTe using a BOP that significantly improves over other potentials on property trends of different phases. Our simulations result in a detailed understanding of defect formation during the melt-growth process. Equally important, we show that the new BOP enables defect formation mechanisms to be studied at a scale level comparable to empirical molecular dynamics simulation methods with a fidelity level approaching quantum-mechanical method

Analysis of WFPC-2 Core Samples for MMOD Discrimination

An examination of the Hubble Space Telescope Wide Field Planetary Camera 2 (WFPC-2) radiator assembly was conducted at NASA Goddard Space Flight Center during the summer of 2009. Immediately apparent was the predominance of impact features, identified as simple or complex craters, resident only in the thermal paint layer; similar features were observed during a prior survey of the WFPC-1 radiator. Larger impact features displayed spallation zones, darkened areas, and other features not observed in impacts onto bare surfaces. Craters were extracted by coring the radiator in the NASA Johnson Space Centers Space Exposed Hardware cleanroom and were subsequently examined using scanning electron microscopy/energy dispersive X-ray spectroscopy to determine the likely origin, e.g., micrometeoritic or orbital debris, of the impacting projectile. Recently, a selection of large cores was re-examined using a new technique developed to overcome some limitations of traditional crater imaging and analysis. This technique, motivated by thin section analysis, examines a polished, lateral surface area revealed by cross-sectioning the core sample. This paper reviews the technique, the classification rubric as extended by this technique, and results to date

Calculating photonic Green's functions using a non-orthogonal finite difference time domain method

In this paper we shall propose a simple scheme for calculating Green's functions for photons propagating in complex structured dielectrics or other photonic systems. The method is based on an extension of the finite difference time domain (FDTD) method, originally proposed by Yee, also known as the Order-N method, which has recently become a popular way of calculating photonic band structures. We give a new, transparent derivation of the Order-N method which, in turn, enables us to give a simple yet rigorous derivation of the criterion for numerical stability as well as statements of charge and energy conservation which are exact even on the discrete lattice. We implement this using a general, non-orthogonal co-ordinate system without incurring the computational overheads normally associated with non-orthogonal FDTD. We present results for local densities of states calculated using this method for a number of systems. Firstly, we consider a simple one dimensional dielectric multilayer, identifying the suppression in the state density caused by the photonic band gap and then observing the effect of introducing a defect layer into the periodic structure. Secondly, we tackle a more realistic example by treating a defect in a crystal of dielectric spheres on a diamond lattice. This could have application to the design of super-efficient laser devices utilising defects in photonic crystals as laser cavities.Comment: RevTex file. 10 pages with 8 postscript figures. Submitted to Phys Rev

How to find discrete contact symmetries

This paper describes a new algorithm for determining all discrete contact symmetries of any differential equation whose Lie contact symmetries are known. The method is constructive and is easy to use. It is based upon the observation that the adjoint action of any contact symmetry is an automorphism of the Lie algebra of generators of Lie contact symmetries. Consequently, all contact symmetries satisfy various compatibility conditions. These conditions enable the discrete symmetries to be found systematically, with little effort

High-efficiency heteroepitaxial InP solar cells

High-efficiency, thin-film InP solar cells grown heteroepitaxially on GaAs and Si single-crystal bulk substrates are being developed as a means of eliminating the problems associated with using single-crystal InP substrates. A novel device structure employing a compositionally graded Ga(x)In(1-x)As layer between the bulk substrate and the InP cell layers is used to reduce the dislocation density and improve the minority carrier properties in the InP. The structures are grown in a continuous sequence of steps using computer-controlled atmospheric pressure metalorganic vapor phase epitaxy (APMOVPE). Dislocation densities as low as 3 x 10(exp 7) sq cm and minority carrier lifetimes as high as 3.3 ns are achieved in the InP layers with this method using both GaAs or Si substrates. Structures prepared in this fashion are also completely free of microcracks. These results represent a substantial improvement in InP layer quality when compared to heteroepitaxial InP prepared using conventional techniques such as thermally cycled growth and post-growth annealing. The present work is is concerned with the fabrication and characterization of high-efficiency, thin-film InP solar cells. Both one-sun and concentrator cells were prepared for device structures grown on GaAs substrates. One-cell cells have efficiencies as high as 13.7 percent at 25 C. However, results for the concentrator cells are emphasized. The concentrator cell performance is characterized as a function of the air mass zero (AM0) solar concentration ratio and operating temperature. From these data, the temperature coefficients of the cell performance parameters are derived as a function of the concentration ratio. Under concentration, the cells exhibit a dramatic increase in efficiency and an improved temperature coefficient of efficiency. At 25 C, a peak conversion efficiency of 18.9 percent is reported. At 80 C, the peak AM0 efficiency is 15.7 percent at 75.6 suns. These are the highest efficiencies yet reported for InP heteroepitaxial cells. Approaches for further improving the cell performance are discussed