Possible atomic structures for the sub-bandgap absorption of chalcogen hyperdoped silicon

Single-crystal silicon wafers were hyperdoped respectively by sulfur, selenium, and tellurium element using ion implantation and nanosecond laser melting. The hyperdoping of such chalcogen elements endowed the treated silicon with a strong and wide sub-bandgap light absorptance. When these hyperdoped silicons were thermally annealed even at low temperatures (such as 200~400 oC), however, this extra sub-bandgap absorptance began to attenuate. In order to explain this attenuation of absorptance, alternatively, we consider it corresponding to a chemical decomposition reaction from optically absorbing structure to non-absorbing structure, and obtain a very good fitting to the attenuated absorptances by using Arrhenius equation. Further, we extract the reaction activation energies from the fittings and they are 0.343(+/- 0.031) eV for S-, 0.426(+/-0.042) eV for Se-, and 0.317(+/-0.033) eV for Te-hyperdoped silicon, respectively. We discuss these activation energies in term of the bond energies of chalcogen-Si metastable bonds, and finally suggest that several high-energy interstitial sites instead of the substitutional site, are very possibly the atomic structures that are responsible for the sub-bandgap absorptance of chalcogen hyperdoped silicon.Comment: 18 pages, 3 figures, 1 tabl

Wetting layer evolution and its temperature dependence during self assembly of InAs/GaAs quantum dots

For InAs/GaAs(001) quantum dot (QD) system, the wetting layer (WL) evolution and its temperature dependence were studied using reflectance difference spectroscopy (RDS) and analyzed with a rate equation model. The WL thicknesses showed a monotonic increase at relatively low growth temperatures but a first increase and then decrease at higher temperatures, which were unexpected from the thermodynamic understanding. By adopting a rate equation model, the temperature dependence of QD growth was assigned as the origin of different WL evolutions. A brief discussion on the indium desorption was also given. Those results gave hints of the kinetic aspects of QD self-assembly.Comment: 13 pages, 3 figure

Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates

Catalyst-free, vertical array of InAs nanowires (NWs) are grown on Si (111) substrate using MOCVD technique. The as-grown InAs NWs show a zinc-blende crystal structure along a < 111 > direction. It is found that both the density and length of InAs NWs decrease with increasing growth temperatures, while the diameter increases with increasing growth temperature, suggesting that the catalyst-free growth of InAs NWs is governed by the nucleation kinetics. The longitudinal optical and transverse optical (TO) mode of InAs NWs present a phonon frequency slightly lower than those of InAs bulk materials, which are speculated to be caused by the defects in the NWs. A surface optical mode is also observed for the InAs NWs, which shifts to lower wave-numbers when the diameter of NWs is decreased, in agreement with the theory prediction. The carrier concentration is extracted to be 2.25 × 1017 cm-3 from the Raman line shape analysis. A splitting of TO modes is also observed

A high-performance quantum dot superluminescent diode with a two-section structure

Based on InAs/GaAs quantum dots [QDs], a high-power and broadband superluminescent diode [SLD] is achieved by monolithically integrating a conventional SLD with a semiconductor optical amplifier. The two-section QD-SLD device exhibits a high output power above 500 mW with a broad emission spectrum of 86 nm. By properly controlling the current injection in the two sections of the QD-SLD device, the output power of the SLD can be tuned over a wide range from 200 to 500 mW while preserving a broad emission spectrum based on the balance between the ground state emission and the first excited state emission of QDs. The gain process of the two-section QD-SLD with different pumping levels in the two sections is investigated

Recovery and treatment of fracturing flowback fluids in the Sulige Gasfield, Ordos Basin

AbstractCentralized and group well deployment and factory-like fracturing techniques are adopted for low-permeability tight sandstone reservoirs in the Sulige Gasfield, Ordos Basin, so as to realize its efficient and economic development. However, environmental protection is faced with grim situations because fluid delivery rises abruptly on site in a short time due to centralized fracturing of the well group. Based on the characteristics of gas testing after fracturing in this gas field, a fracturing flowback fluid recovery and treatment method suitable for the Sulige Gasfield has been developed with the landform features of this area taken into account. Firstly, a high-efficiency well-to-well fracturing flowback fluid recovery and reutilization technique was developed with multi-effect surfactant polymer recoverable fracturing fluid system as the core, and in virtue of this technique, the treatment efficiency of conventional guar gum fracturing fluid system is increased. Secondly, for recovering and treating the end fluids on the well sites, a fine fracturing flowback fluid recovery and treatment technique has been worked out with “coagulation and precipitation, filtration and disinfection, and sludge dewatering” as the main part. Owing to the application of this method, the on-site water resource utilization ratio has been increased and environmental protection pressure concerned with fracturing operation has been relieved. In 2014, field tests were performed in 62 wells of 10 well groups, with 32980 m3 cumulative treated flowback fluid, 17160 m3 reutilization volume and reutilization ratio over 70%. Obviously, remarkable social and economical benefits are thus realized

Preparation of SnS2 colloidal quantum dots and their application in organic/inorganic hybrid solar cells

Dispersive SnS2 colloidal quantum dots have been synthesized via hot-injection method. Hybrid photovoltaic devices based on blends of a conjugated polymer poly[2-methoxy-5-(3",7"dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) as electron donor and crystalline SnS2 quantum dots as electron acceptor have been studied. Photoluminescence measurement has been performed to study the surfactant effect on the excitons splitting process. The photocurrent of solar cells with the hybrid depends greatly on the ligands exchange as well as the device heat treatment. AFM characterization has demonstrated morphology changes happening upon surfactant replacement and annealing, which can explain the performance variation of hybrid solar cells