Simultaneous measurement of displacement and temperature based on two cascaded balloon-like bent fibre structures

A low-cost optical fibre sensor based on two cascaded balloon-like bent fibre (BBF) structures for simultaneous displacement and temperature measurement is reported. The sensor is fabricated by cascading two balloon-like bent single-mode fibres (SMFs) which with different bending radii, generating two separate interference dips within a limited wavelength range. The wavelength of the two interference dips exhibits different responses to external displacement and temperature variations, hence simultaneous measurement of displacement and temperature is realized. Experimental results show that the proposed optical fibre sensor achieves a displacement sensitivity of −318.8 pm/μm and a temperature sensitivity of 47.4 pm/°C. Taking advantage of its low-cost, ease of fabrication, and experimentally determined high sensitivity, the sensor in this investigation can be potentially applied in both displacement and temperature measurement fields

High-Performance Biomemristor Embedded with Graphene Quantum Dots

By doping a dielectric layer material and improving the device’s structure, the electrical characteristics of a memristor can be effectively adjusted, and its application field can be expanded. In this study, graphene quantum dots are embedded in the dielectric layer to improve the performance of a starch-based memristor, and the PMMA layer is introduced into the upper and lower interfaces of the dielectric layer. The experimental results show that the switching current ratio of the Al/starch: GQDs/ITO device was 102 times higher than that of the Al/starch/ITO device. However, the switching current ratio of the Al/starch: GQDs/ITO device was further increased, and the set voltage was reduced (−0.75 V) after the introduction of the PMMA layer. The introduction of GQDs and PMMA layers can regulate the formation process of conductive filaments in the device and significantly improve the electrical performance of the memristor