Gate defined quantum dot realized in a single crystalline InSb nanosheet

Single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics and topological quantum computing. Here we report on realization of a quantum dot device from a single crystalline InSb nanosheet grown by molecular-beam epitaxy. The device is fabricated from the nanosheet on a Si/SiO2 substrate and the quantum dot confinement is achieved by top gate technique. Transport measurements show a series of Coulomb diamonds, demonstrating that the quantum dot is well defined and highly tunable. Tunable, gate-defined, planar InSb quantum dots offer a renewed platform for developing semiconductor-based quantum computation technology.Comment: 12 pages, 4 figure

Generalizations of the Erd\H{o}s-Kac Theorem and the Prime Number Theorem

In this paper, we study the linear independence between the distribution of the number of prime factors of integers and that of the largest prime factors of integers. Respectively, under a restriction on the largest prime factors of integers, we will refine the Erd\H{o}s-Kac Theorem and Loyd's recent result on Bergelson and Richter's dynamical generalizations of the Prime Number Theorem. At the end, we will show that the analogue of these results holds with respect to the Erd\H{o}s-Pomerance Theorem as well.Comment: 20 pages. Accepted by the Communications in Mathematics and Statistic

Some remarks on strong multiplicity one for paramodular forms

We establish several refined strong multiplicity one results for paramodular cusp forms by using the spinor and standard $L$-functions with the combination of the methods from both of automorphic side and Galois side.Comment: 28 page

Anisotropic Pauli spin-blockade effect and spin-orbit interaction field in an InAs nanowire double quantum dot

We report on experimental detection of the spin-orbit interaction field in an InAs nanowire double quantum dot device. In the spin blockade regime, leakage current through the double quantum dot is measured and is used to extract the effects of spin-orbit interaction and hyperfine interaction on spin state mixing. At finite magnetic fields, the leakage current arising from the hyperfine interaction is suppressed and the spin-orbit interaction dominates spin state mixing. We observe dependence of the leakage current on the applied magnetic field direction and determine the direction of the spin-orbit interaction field. We show that the spin-orbit field lies in a direction perpendicular to the nanowire axis but with a pronounced off-substrate-plane angle. It is for the first time that such an off-substrate-plane spin-orbit field in an InAs nanowire has been detected. The results are expected to have an important implication in employing InAs nanowires to construct spin-orbit qubits and topological quantum devices.Comment: 20 pages, 5 figures, Supporting Informatio

Two-dimensional Mott variable-range hopping transport in a disordered MoS2_2 nanoflake

The transport characteristics of a disordered MoS$_2$ nanoflake in the insulator regime are studied by electrical and magnetotransport measurements. The layered MoS$_2$ nanoflake is exfoliated from a bulk MoS$_2$ crystal and the conductance $G$ and magnetoresistance are measured in a four-probe setup over a wide range of temperatures. At high temperatures, we observe that $\log_{10}G$ exhibits a $-T^{-1}$ temperature dependence and the transport in the nanoflake dominantly arises from thermal activation. At low temperatures, where the transport in the nanoflake dominantly takes place via variable-range hopping (VRH) processes, we observe that $\log_{10}G$ exhibits a $-T^{-1/3}$ temperature dependence, an evidence for the two-dimensional (2D) Mott VRH transport. The measured low-field magnetoresistance of the nanoflake in the insulator regime exhibits a quadratic magnetic field dependence $\sim \alpha B^2$ with $\alpha\sim T^{-1}$, fully consistent with the 2D Mott VRH transport in the nanoflake.Comment: 14 pages, 4 figures, and Supplemental Material

Effect of Amorphization Methods on the Properties and Structures of Potato Starch-Monoglyceride Complex

Recently, starch-based fat replacers (FRs) have emerged as unique ingredients, possessing few calories and high vascular scavenger function without adverse organoleptic changes. Here, a two-step modification method for the development of a starch-based FRs is reported. First, native potato starch is amorphized by grinding, alkali and ethanol treatment. Then, the amorphized starch is complexed with monoglyceride. The results show that alkaline amorphous potato starch (AAPS) has the best emulsifying activity; ethanol amorphous potato starch complex (EAPSC) has the highest content of resistant starch (RS) (21.49%), while grinding amorphous potato starch (GAPS) retains the granular structure of the original starch best. The amorphization reduces the amylose content of starch, leading to reduced swelling power and increased digestibility. Complexation, on the other hand, is more like attaching a layer of the hydrophobic membrane. Combined with DSC and XRD, amorphization reduces the value of enthalpy and crystallinity, while the complexation process does the opposite. Overall, EAPSC is the best candidate for novel FRs, due to its greater emulsion stability and enzyme resistance. The experimental results provide a theoretical basis for the application of a novel potato starch-monoglyceride complex in foods such as cakes and snack fillings