Room temperature ferromagnetic behavior in the hollandite-type titanium oxide

A hollandite-type K(x)Ti(8)O(16) polycrystalline sample has been prepared and studied by magnetization, resistivity and x-ray photoelectron spectroscopy (XPS). Room temperature ferromagnetic behavior is observed in the magnetic hysteresis measurement. The sample shows a semiconductive temperature dependence in the resistivity measurement. Analysis of the Ti 2p(3/2) core-level XPS spectrum indicates that the titanium ions have a mixed valence of Ti(4+) and Ti(3+). In addition, the valence band spectrum reveals that the 3d electrons tend to localize on Ti(3+) ions in the hollandite-type TiO(2) lattice. Also, analysis of the valence band spectrum shows that the prepared sample is a wide-gap oxide with a band gap of 3.6 eV. These results indicate that the present hollandite-type K(x)Ti(8)O(16) sample can be classified as a TiO(2)-based wide-gap semiconductor with Curie temperature above room temperature. Room temperature ferromagnetism (RTFM) decreases in the sample prepared under a strong reducing gas atmosphere, accompanied with the decrease in the resistivity. The results imply that the localized 3d electrons are responsible for the RTFM of the K(x)Ti(8)O(16) sample

HELIUM ISOTOPES AND TECTONICS IN SOUTHERN ITALY

Geodynamic evolution of southern Italy can be understood within the framework of the Mediterranean- Alpine System. Subduction of a plate along the Sicily- Calabrian forearc under the Tyrrhenian Sea has been suggested by many geophysicists, although it is not yet confirmed and remains somewhat controversial. Helium isotope ratios provide useful information on the geotectonic structure of the region. We report here the 3He/4He ratios of terrestrial gas samples from southern Italy. The observed 3He/4He ratios are relatively high in the Eolian volcanic arc region and low in the other areas. Dichotomous explanations are presented. Firstly volcanic arc-forearc hypothesis suggests the subduction along the Sicily-Calabrian forearc. Secondly horizontal transport hypothesis is described based on the relationship between the ratios and radial distance from the recent spreading basin in Southern Tyrrhenian Sea

Metallic phase in stoichiometric CeOBiS 2 revealed by space-resolved ARPES

Recently CeOBiS2 system without any fluorine doping is found to show superconductivity posing question on its origin. Using space resolved ARPES we have found a metallic phase embedded in the morphological defects and at the sample edges of stoichiometric CeOBiS2. While bulk of the sample is semiconducting, the embedded metallic phase is characterized by the usual electron pocket at X point, similar to the Fermi surface of doped BiS2-based superconductors. Typical size of the observed metallic domain is larger than the superconducting correlation length of the system suggesting that the observed superconductivity in undoped CeOBiS2 might be due to this embedded metallic phase at the defects. The results also suggest a possible way to develop new systems by manipulation of the defects in these chalcogenides with structural instability

Proximity to Fermi-surface topological change in superconducting LaO0.54F0.46BiS2

The electronic structure of nearly optimally-doped novel superconductor LaO$_{1-x}$F$_x$BiS$_2$ (${\it x}$ = 0.46) was investigated using angle-resolved photoemission spectroscopy (ARPES). We clearly observed band dispersions from 2 to 6 eV binding energy and near the Fermi level (${\it E}_{\rm F}$), which are well reproduced by first principles calculations when the spin-orbit coupling is taken into account. The ARPES intensity map near ${\it E}_{\rm F}$ shows a square-like distribution around the $\Gamma$(Z) point in addition to electronlike Fermi surface (FS) sheets around the X(R) point, indicating that FS of LaO$_{0.54}$F$_{0.46}$BiS$_2$ is in close proximity to the theoretically-predicted topological change.Comment: 6 pages, 3 figures, + supplemental materia

Spectroscopic evidence of the formation of (V,Ti)O₂ solid solution in VO₂ thinner films grown on TiO₂(001) substrates

We have prepared VO2 thin films epitaxially grown on TiO2(001) substrates with thickness systematically varied from 2.5 to 13 nm using a pulsed laser deposition method, and studied the transport property and electronic states of the films by means of resistivity and in situ synchrotron photoemission spectroscopy (SRPES). In resistivity measurements, the 13-nm-thick film exhibits a metal-insulator transition at around 290 K on cooling with change of three orders of magnitudes in resistivity. As the film thickness decreases, the metal-insulator transition broadens and the transition temperature increases. Below 4 nm, the films do not show the transition and become insulators. In situ SRPES measurements of near the Fermi level valence band find that the electronic state of the 2.5-nm-thick film is different than that of the temperature-induced insulator phase of VO2 itself although these two states are insulating. Ti 2p core-level photoemission measurements reveal that Ti ions exist near the interface between the films and TiO2 substrates, with a chemical state similar to that in (V,Ti)O-2 solid solution. These results indicate that insulating (V,Ti)O-2 solid solution is formed in the thinner films. We propose a simple growth model of a VO2 thin film on a TiO2(001) substrate. Near the interface, insulating (V,Ti) O-2 solid solution is formed due to the diffusion of Ti ions from the TiO2 substrate into the VO2 film. The concentration of Ti in (V,Ti) O-2 is relatively high near the interface and decreases toward the surface of the film. Beyond a certain film thickness (about 7 nm in the case of the present 13-nm-thick film), the VO2 thin film without any Ti ions starts to grow. Our work suggests that developing a technique for preparing the sharp interface between the VO2 thin films and TiO2 substrates is a key issue to study the physical property of an ultrathin film of "pure" VO2, especially to examine the presence of the novel electronic state called a semi-Dirac point phase predicted by calculations

Determination of the local structure of Sr2−x_{2-x}Mx_xIrO4_4 (M = K, La) as a function of doping and temperature

The local structure of correlated spin-orbit insulator Sr$_{2-x}$M$_x$IrO$_4$ (M = K, La) has been investigated by Ir L$_3$-edge extended x-ray absorption fine structure measurements. The measurements were performed as a function of temperature for different dopings induced by substitution of Sr with La or K. It is found that Ir-O bonds have strong covalency and they hardly show any change across the N\'eel temperature. In the studied doping range, neither Ir-O bonds nor their dynamics, measured by their mean square relative displacements, show any appreciable change upon carrier doping, indicating possibility of a nanoscale phase separation in the doped system. On the other hand, there is a large increase of the static disorder in Ir-Sr correlation, larger for K doping than La doping. Similarities and differences with respect to the local lattice displacements in cuprates are briefly discussed.Comment: Main text: 6 pages, 4 figures, Supplemental information: 2 pages, 2 figure