A study of trends and techniques for space base electronics

The use of dry processing and alternate dielectrics for processing wafers is reported. A two dimensional modeling program was written for the simulation of short channel MOSFETs with nonuniform substrate doping. A key simplifying assumption used is that the majority carriers can be represented by a sheet charge at the silicon dioxide-silicon interface. In solving current continuity equation, the program does not converge. However, solving the two dimensional Poisson equation for the potential distribution was achieved. The status of other 2D MOSFET simulation programs are summarized

Trends and Techniques for Space Base Electronics

Simulations of various phosphorus and boron diffusions in SOS were completed and a sputtering system, furnaces, and photolithography related equipment were set up. Double layer metal experiments initially utilized wet chemistry techniques. By incorporating ultrasonic etching of the vias, premetal cleaning a modified buffered HF, phosphorus doped vapox, and extended sintering, yields of 98% were obtained using the standard test pattern. A two dimensional modeling program was written for simulating short channel MOSFETs with nonuniform substrate doping. A key simplifying assumption used is that the majority carriers can be represented by a sheet charge at the silicon dioxide silicon interface. Although the program is incomplete, the two dimensional Poisson equation for the potential distribution was achieved. The status of other Z-D MOSFET simulation programs is summarized

On the design of an adjustable high precision latching hinge

The design and test details of a high precision hinge and locking mechanism created principally in support of the Lockheed space deployable Flexrib Parabolic Antenna concept are presented. These developed improvements in the detail design of ultra-precise rib hinge and contour adjustment mechanisms will allow radio frequency antenna reflectors to expand into the 15-50 meter diameter size class and to support the .013 mm. deployment repeatability tolerance required to support the 12+ GHz frequency range

Post heat treatment effects on double layer metal structures for VLSI applications

The realization of high yield double layer metal systems using wet chemistry processes and the ability to extend yields beyond that attainable with wet chemistry by means of post sintering processes at temperatures below 500 C for potential applications in very large scale integration structures were studied. Yields in excess of 98% and average total contact resistance of less than 150 ohms and 200 ohms were realized for a series of 560 vias of 0.5 X 0.5 mils and 0.2 X 0.2 mils in size, respectively

The Douglas-Peucker line simplification algorithm : an introduction with programs

CISRG discussion paper ;

Effects of a simulated space environment on thermal radiation characteristics of selected black coatings

Simulated space environment effects on thermal radiation characteristics of black coating

Vacuum and ultraviolet radiation effects on binders and pigments for spacecraft thermal control coatings

An evaluation of several silicone resin binders and powdered inorganic pigments for potential use in spacecraft thermal-control paint formulations is presented. The pigments were selected on the basis of a hypothesis relating the heat of formation of a compound to the compound's resistance to ultra-radiation-induced degradation. Reflectance measurements were made in situ to determine degradation rates due to ultraviolet radiation. The tested polydimethylsiloxane resins were not significantly affected by long exposures to ultraviolet radiation. All the pigments, which were dispersed in a polydimethylsiloxane resin, were degraded by ultraviolet radiation as determined by an increase of solar absorptance. For the materials evaluated in this study, no evidence was found to indicate that pigments with high heats of formation were resistant to ultraviolet degradation

A search for strong, ordered magnetic fields in Herbig Ae/Be stars

The origin of magnetic fields in intermediate-mass and high-mass stars is fundamentally a mystery. Clues toward solving this basic astrophysical problem can likely be found at the pre-main sequence (PMS) evolutionary stage. With this work, we perform the largest and most sensitive search for magnetic fields in pre-main sequence Herbig Ae/Be (HAeBe) stars. Sixty-eight observations of 50 HAeBe stars have been obtained in circularly polarised light using the FORS1 spectropolarimeter at the ESO VLT. An analysis of both Balmer and metallic lines reveals the possible presence of weak longitudinal magnetic fields in photospheric lines of two HAeBe stars, HD 101412 and BF Ori. The intensity of the longitudinal fields detected in HD 101412 and BF Ori suggest that they correspond to globally-ordered magnetic fields with surface intensities of order 1 kG. Monte Carlo simulations of the longitudinal field measurements of the undetected stars allow us to place an upper limits of about 300 G on the general presence of aligned magnetic dipole magnetic fields, and of about 500 G on perpendicular dipole fields. We find that the observed bulk incidence of magnetic HAeBe stars in our sample is 8-12%, in good agreement with that of magnetic main sequence stars of similar masses. We also find that the rms longitudinal field intensity of magnetically-detected HAeBe stars is similar to that of Ap stars and consistent with magnetic flux conservation during stellar evolution. These results are all in agreement with the hypothesis that the magnetic fields of main sequence Ap/Bp stars are fossils, which already exist within the stars at the pre-main sequence stage. Finally, we explore the ability of our new magnetic data to constrain magnetospheric accretion in Herbig Ae/Be stars.Comment: Accepted by Monthly Notices of the Royal Astronomical Society, 2007 January 11. Received 2007 January 11; in original form 2006 August 18. The paper contains 18 pages, 11 figures and 2 table

A study of trends and techniques for space base electronics

A sputtering system was developed to deposit aluminum and aluminum alloys by the dc sputtering technique. This system is designed for a high level of cleanliness and for monitoring the deposition parameters during film preparation. This system is now ready for studying the deposition and annealing parameters upon double-level metal preparation. A technique recently applied for semiconductor analysis, the finite element method, was studied for use in the computer modeling of two dimensional MOS transistor structures. It was concluded that the method has not been sufficiently well developed for confident use at this time. An algorithm was developed for confident use at this time. An algorithm was developed for implementing a computer study which is based upon the finite difference method. The program which was developed was modified and used to calculate redistribution data for boron and phosphorous which had been predeposited by ion implantation with range and straggle conditions. Data were generated for 111 oriented SOS films with redistribution in N2, dry O2 and steam ambients