528 research outputs found
Computationally Efficient Implementation of Convolution-based Locally Adaptive Binarization Techniques
One of the most important steps of document image processing is binarization.
The computational requirements of locally adaptive binarization techniques make
them unsuitable for devices with limited computing facilities. In this paper,
we have presented a computationally efficient implementation of convolution
based locally adaptive binarization techniques keeping the performance
comparable to the original implementation. The computational complexity has
been reduced from O(W2N2) to O(WN2) where WxW is the window size and NxN is the
image size. Experiments over benchmark datasets show that the computation time
has been reduced by 5 to 15 times depending on the window size while memory
consumption remains the same with respect to the state-of-the-art algorithmic
implementation
Plasma plume effects on the conductivity of amorphous-LaAlO<sub>3</sub>/SrTiO<sub>3</sub> interfaces grown by pulsed laser deposition in O<sub>2</sub> and Ar
Amorphous LaAlO3/SrTiO3 interfaces exhibit metallic conductivity similarto those found for the extensively studied crystalline-LaAlO3/SrTiO3 interfaces. Here, we investigate the conductivity of the amorphous-LaAlO3/SrTiO3 interfaces grown in different pressures of O2 and Ar background gases. During the deposition, the LaAlO3 ablation plume is also studied, in situ, by fast photography and space-resolved optical emission spectroscopy. An interesting correlation between interfacial conductivity and kinetic energy of the Al atoms in the plume is observed: to assure conducting interfaces of amorphous-LaAlO3/SrTiO3, the kinetic energy of Al should be higher than 1 eV. Our findings add further insights on mechanisms leading to interfacial conductivity in SrTiO3-based oxide heterostructures
A high-mobility two-dimensional electron gas at the heteroepitaxial spinel/perovskite complex oxide interface of {\gamma}-Al2O3/SrTiO3
The discovery of two-dimensional electron gases (2DEGs) at the
heterointerface between two insulating perovskite-type oxides, such as LaAlO3
and SrTiO3, provides opportunities for a new generation of all-oxide electronic
and photonic devices. However, significant improvement of the interfacial
electron mobility beyond the current value of approximately 1,000 cm2V-1s-1 (at
low temperatures), remains a key challenge for fundamental as well as applied
research of complex oxides. Here, we present a new type of 2DEG created at the
heterointerface between SrTiO3 and a spinel {\gamma}-Al2O3 epitaxial film with
excellent quality and compatible oxygen ions sublattices. This
spinel/perovskite oxide heterointerface exhibits electron mobilities more than
one order of magnitude higher than those of perovskite/perovskite oxide
interfaces, and demonstrates unambiguous two-dimensional conduction character
as revealed by the observation of quantum magnetoresistance oscillations.
Furthermore, we find that the spinel/perovskite 2DEG results from
interface-stabilized oxygen vacancies and is confined within a layer of 0.9 nm
in proximity to the heterointerface. Our findings pave the way for studies of
mesoscopic physics with complex oxides and design of high-mobility all-oxide
electronic devices.Comment: 25pages, 5 figure
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