40 research outputs found

    Monte Carlo study of Si(111) homoepitaxy

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    An attempt is made to simulate the homoepitaxial growth of a Si(111) surface by the kinetic Monte Carlo method in which the standard Solid-on-Solid model and the planar model of the (7x7) surface reconstruction are used in combination. By taking account of surface reconstructions as well as atomic deposition and migrations, it is shown that the effect of a coorparative stacking transformation is necessary for a layer growth.Comment: 4 pages, 5 figures. For Fig.1 of this article, please see Fig.2 of Phys.Rev. B56, 3583 (1997). To appear in Phys.Rev.B. (June 1998

    Low Energy Electron Microscopy (LEEM)

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    Ein Ultrahochvakuum-Elektronenmikroskop zur Abbildung von Oberflaechen mit langsamen reflektierten und emittierten Elektronen

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    With 81 refs.SIGLECopy held by FIZ Karlsruhe; available from UB/TIB Hannover / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekDEGerman
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