Electron Coherence in Mesoscopic Kondo Wires

We present measurements of the magnetoresistance of long and narrow quasi one-dimensional gold wires containing magnetic iron impurities. The electron phase coherence time extracted from the weak antilocalisation shows a pronounced plateau in a temperature region of 300 mK - 800 mK, associated with the phase breaking due to the Kondo effect. Below the Kondo temperature, the phase coherence time increases, as expected in the framework of Kondo physics. At much lower temperatures, the phase coherence time saturates again, in contradiction with standard Fermi liquid theory. In the same temperature regime, the resistivity curve displays a characteristic maximum at zero magnetic field, associated with the formation of a spin glass state. We argue that the interactions between the magnetic moments are responsible for the low temperature saturation of the phase coherence time.Comment: To appear in Advances in Solid State Physics, Vol 43, edited by B. Kramer (Springer Verlag, Berlin 2003

Practical quantum realization of the ampere from the electron charge

One major change of the future revision of the International System of Units (SI) is a new definition of the ampere based on the elementary charge \emph{e}. Replacing the former definition based on Amp\`ere's force law will allow one to fully benefit from quantum physics to realize the ampere. However, a quantum realization of the ampere from \emph{e}, accurate to within $10^{-8}$ in relative value and fulfilling traceability needs, is still missing despite many efforts have been spent for the development of single-electron tunneling devices. Starting again with Ohm's law, applied here in a quantum circuit combining the quantum Hall resistance and Josephson voltage standards with a superconducting cryogenic amplifier, we report on a practical and universal programmable quantum current generator. We demonstrate that currents generated in the milliampere range are quantized in terms of $ef_\mathrm{J}$ ($f_\mathrm{J}$ is the Josephson frequency) with a measurement uncertainty of $10^{-8}$. This new quantum current source, able to deliver such accurate currents down to the microampere range, can greatly improve the current measurement traceability, as demonstrated with the calibrations of digital ammeters. Beyond, it opens the way to further developments in metrology and in fundamental physics, such as a quantum multimeter or new accurate comparisons to single electron pumps.Comment: 15 pages, 4 figure

Quantum Hall effect in exfoliated graphene affected by charged impurities: metrological measurements

Metrological investigations of the quantum Hall effect (QHE) completed by transport measurements at low magnetic field are carried out in a-few-$\mu\mathrm{m}$-wide Hall bars made of monolayer (ML) or bilayer (BL) exfoliated graphene transferred on $\textrm{Si/SiO}_{2}$ substrate. From the charge carrier density dependence of the conductivity and from the measurement of the quantum corrections at low magnetic field, we deduce that transport properties in these devices are mainly governed by the Coulomb interaction of carriers with a large concentration of charged impurities. In the QHE regime, at high magnetic field and low temperature ($T<1.3 \textrm{K}$), the Hall resistance is measured by comparison with a GaAs based quantum resistance standard using a cryogenic current comparator. In the low dissipation limit, it is found quantized within 5 parts in $10^{7}$ (one standard deviation, $1 \sigma$) at the expected rational fractions of the von Klitzing constant, respectively $R_{\mathrm{K}}/2$ and $R_{\mathrm{K}}/4$ in the ML and BL devices. These results constitute the most accurate QHE quantization tests to date in monolayer and bilayer exfoliated graphene. It turns out that a main limitation to the quantization accuracy, which is found well above the $10^{-9}$ accuracy usually achieved in GaAs, is the low value of the QHE breakdown current being no more than $1 \mu\mathrm{A}$. The current dependence of the longitudinal conductivity investigated in the BL Hall bar shows that dissipation occurs through quasi-elastic inter-Landau level scattering, assisted by large local electric fields. We propose that charged impurities are responsible for an enhancement of such inter-Landau level transition rate and cause small breakdown currents.Comment: 14 pages, 9 figure

Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide

Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within $10^{-9}$ in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by sublimation of Si, under higher magnetic fields. Here, we report on a device made of graphene grown by chemical vapour deposition on SiC which demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4 K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron density devices.Comment: 12 pages, 8 figure

The ampere and the electrical units in the quantum era

By fixing two fundamental constants from quantum mechanics, the Planck constant $h$ and the elementary charge $e$, the revised Syst\`eme International (SI) of units endorses explicitly quantum mechanics. This evolution also highlights the importance of this theory which underpins the most accurate realization of the units. From 20 May 2019, the new definitions of the kilogram and of the ampere, based on fixed values of $h$ and $e$ respectively, will particularly impact the electrical metrology. The Josephson effect (JE) and the quantum Hall effect (QHE), used to maintain voltage and resistance standards with unprecedented reproducibility since 1990, will henceforth provide realizations of the volt and the ohm without the uncertainties inherited from the older electromechanical definitions. More broadly, the revised SI will sustain the exploitation of quantum effects to realize electrical units, to the benefit of end-users. Here, we review the state-of-the-art of these standards and discuss further applications and perspectives.Comment: 78 pages, 35 figure