2,902 research outputs found
An experimental investigation of radiation effects in semiconductors Semiannual status report, Jul. 1 - Dec. 31, 1967
Recombination luminescence of irradiated silicon, and hole-optical phonon interaction in degenerate silico
An experimental investigation of radiation effects in semiconductors semiannual status report, 1 jul. - 31 dec. 1964
Effects of fast electron irradiation on silicon semiconductor
Research related to an experimental test of general relativity Semiannual status report, 1 Jul. - 31 Dec. 1966
Passive nonmetallic gyroscopic earth satellite for measuring in-plane precession predicted by general relativit
Recombination lifetimes in gamma-irradiated P-type float zone silicon
Electron decay rate and absorption cross sections for electron holes and recombination in gamma irradiated n-type silico
Radiation pyrometer for gas turbine blades
A turbine blade temperature measuring system for liquid oxygen turbopumps is reported. The system includes a three mode, two-input optical signal processor, interconnecting cable, and four sensor heads. Two of the heads are aperture type, while the other two are lens type. This system is applicable to a temperature range of 1400 to 2200 F
Recombination luminescence in N-type Czochralski silicon
Recombination luminescence in Czochralski silico
Annealing of Neutron-irradiation-induced Changes in Impurity Conduction in Antimony- Doped Germanium
Annealing of neutron-irradiation-induced changes in impurity conduction in antimony-doped germaniu
Annealing of fast neutron damage in impurity-conducting n-type germanium
Thermal annealing of fast neutron induced changes in electrical properties of highly doped n-type germaniu
An experimental investigation of radiation effects in semiconductors Semiannual status report, 1 Jan. - 30 Jun. 1967
Radiation effects on semiconductors, and recombination lifetimes in gamma-irradiated, boron-doped silico
Independent Orbiter Assessment (IOA): Analysis of the landing/deceleration subsystem
The results of the Independent Orbiter Assessment (IOA) of the Failure Modes and Effects Analysis (FMEA) and Critical Items List (CIL) are presented. The IOA approach features a top-down analysis of the hardware to determine failure modes, criticality, and potential critical items. To preserve independence, this analysis was accomplished without reliance upon the results contained within the NASA FMEA/CIL documentation. This report documents the independent analysis results corresponding to the Orbiter Landing/Deceleration Subsystem hardware. The Landing/Deceleration Subsystem is utilized to allow the Orbiter to perform a safe landing, allowing for landing-gear deploy activities, steering and braking control throughout the landing rollout to wheel-stop, and to allow for ground-handling capability during the ground-processing phase of the flight cycle. Specifically, the Landing/Deceleration hardware consists of the following components: Nose Landing Gear (NLG); Main Landing Gear (MLG); Brake and Antiskid (B and AS) Electrical Power Distribution and Controls (EPD and C); Nose Wheel Steering (NWS); and Hydraulics Actuators. Each level of hardware was evaluated and analyzed for possible failure modes and effects. Criticality was assigned based upon the severity of the effect for each failure mode. Due to the lack of redundancy in the Landing/Deceleration Subsystems there is a high number of critical items
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