363 research outputs found
Distinguishing impurity concentrations in GaAs and AlGaAs, using very shallow undoped heterostructures
We demonstrate a method of making a very shallow, gateable, undoped
2-dimensional electron gas. We have developed a method of making very low
resistivity contacts to these structures and systematically studied the
evolution of the mobility as a function of the depth of the 2DEG (from 300nm to
30nm). We demonstrate a way of extracting quantitative information about the
background impurity concentration in GaAs and AlGaAs, the interface roughness
and the charge in the surface states from the data. This information is very
useful from the perspective of molecular beam epitaxy (MBE) growth. It is
difficult to fabricate such shallow high-mobility 2DEGs using modulation doping
due to the need to have a large enough spacer layer to reduce scattering and
switching noise from remote ionsied dopants.Comment: 4 pages, 5 eps figure
Theory of the in-plane photoelectric effect in a two-dimensional electron system
A new photoelectric phenomenon, the in-plane photoelectric (IPPE) effect, has
been recently discovered at terahertz (THz) frequencies in a
GaAs/AlGaAs heterostructure with a two-dimensional (2D) electron
gas (W. Michailow et al., Science Advances, DOI: 10.1126/sciadv.abi8398). In
contrast to the conventional PE phenomena, the IPPE effect is observed at
normal incidence of radiation, the height of the in-plane potential step, which
electrons overcome after absorption of a THz photon, is electrically tunable by
gate voltages, and the effect is maximal at a negative electron "work
function", when the Fermi energy lies above the potential barrier. Based on the
discovered phenomenon, efficient detection of THz radiation has been
demonstrated. In this work we present a detailed theory of the IPPE effect
providing analytical results for the THz wave generated photocurrent, the
quantum efficiency, and the internal responsivity of the detector, in
dependence on the frequency, the gate voltages, and the geometrical parameters
of the detector. The calculations are performed for macroscopically wide
samples at zero temperature. Results of the theory are applicable to any
semiconductor systems with 2D electron gases, including III-V structures,
silicon-based field effect transistors, and the novel 2D layered,
graphene-related materials.Comment: 21 pages, 15 figures, substantially revised improved versio
Nuclear spin coherence in a quantum wire
We have observed millisecond-long coherent evolution of nuclear spins in a
quantum wire at 1.2 K. Local, all-electrical manipulation of nuclear spins is
achieved by dynamic nuclear polarization in the breakdown regime of the Integer
Quantum Hall Effect combined with pulsed Nuclear Magnetic Resonance. The
excitation thresholds for the breakdown are significantly smaller than what
would be expected for our sample and the direction of the nuclear polarization
can be controlled by the voltage bias. As a four-level spin system, the device
is equivalent to two qubits.Comment: 5 pages, 5 figure
Recommended from our members
Active metamaterial polarization modulators for the Terahertz frequency range
Abstract
Active control of chirality in the terahertz frequency range is of great importance in many scientific areas, which include research into fundamental optical phenomena, investigation of novel materials, spectroscopy, imaging, wireless communications and chemistry. The lack of efficient, integrated and fast-reconfigurable polarization modulators has hindered, so far, the full exploitation of applications in all the aforementioned fields. Metamaterials are artificial resonant elements possessing unique remarkable properties such as high efficiency and miniaturization capability. The interplay of metallic metamaterial arrays with electrostatically tunable monolayer graphene has been demonstrated to be a valid approach for the realization of a novel class of THz devices. In this work, the realization of active chiral graphene/metamaterial modulator is presented. The versatility of this experimental approach allowed the device integration with broadband sources such as terahertz time domain spectrometers as well as with quantum cascade lasers. A continuous rotation of the polarization plane > 30° has been reported with a reconfiguration speed > 5 MHz. These results pave the way to the integration of fast terahertz polarization modulators in all the applications where these devices are in great demand.</jats:p
Heterodyne receiver at 2.5 THz with quantum cascade laser and hot electron bolometric mixer
Quantum cascade lasers (QCLs) operating at 2.5 THz have been used for gas phase spectroscopy and as local oscillator in a heterodyne receiver. One QCL has a Fabry-Perot resonator while the other has a distributed feedback resonator. The linewidth and frequency tunability of both QCLs have been investigated by either mixing two modes of the QCL or by mixing the emission from the QCL with the emission from a 2.5 THz gas laser. The frequency tunability as well as the linewidth is sufficient for Doppler limited spectroscopy of methanol gas. The QCLs have been used successfully as local oscillators in a heterodyne receiver. Noise temperature measurements with a hot electron bolometer and a QCL yielded the same result as with a gas laser as local oscillator
Non-invasive detection of the evolution of the charge states of a double dot system
Coupled quantum dots are potential candidates for qubit systems in quantum
computing. We use a non-invasive voltage probe to study the evolution of a
coupled dot system from a situation where the dots are coupled to the leads to
a situation where they are isolated from the leads. Our measurements allow us
to identify the movement of electrons between the dots and we can also identify
the presence of a charge trap in our system by detecting the movement of
electrons between the dots and the charge trap. The data also reveals evidence
of electrons moving between the dots via excited states of either the single
dots or the double dot molecule.Comment: Accepted for publication in Phys. Rev. B. 4 pages, 4 figure
Linear non-hysteretic gating of a very high density 2DEG in an undoped metal-semiconductor-metal sandwich structure
Modulation doped GaAs-AlGaAs quantum well based structures are usually used
to achieve very high mobility 2-dimensional electron (or hole) gases. Usually
high mobilities () are achieved at
high densities. A loss of linear gateability is often associated with the
highest mobilites, on account of a some residual hopping or parallel conduction
in the doped regions. We have developed a method of using fully undoped
GaAs-AlGaAs quantum wells, where densities
can be achieved while maintaining fully
linear and non-hysteretic gateability. We use these devices to understand the
possible mobility limiting mechanisms at very high densities.Comment: 4 pages, 3 eps figure
Terahertz aperture SNOM mapping of metamaterial coupled resonators
Metamaterials have emerged as the basis of a novel optoelectronic platform operating in the terahertz (THz) range, due to their versatility and strong light-matter interaction. The necessary design of efficient modulators and detectors requires a detailed investigation of metamaterial resonances and their interplay with an active medium, e.g. graphene. An aperture-SNOM (a-SNOM) system based on picosecond THz pulses was used to investigate the spectral characteristics of a set of lithographically tuned metamaterial coupled resonators. This approach allowed the mapping of the supported E-field of each resonator a few microns from the device plane, yielding bonding and antibonding modes reminiscent of electromagnetic induced transparency
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