A monolithic 5.8 GHZ power amplifier in a 25 GHZ FT Silicon Bipolar technology

A monolithic integrated radio-frequency power amplifier for the 5.8 GHz band has been realized in a 25 GHz-fT Si-bipolar production technology (B6HF). The 2-stage push-pull type power amplifier uses a planar on-chip transformer as input-balun and for interstage matching. A high-current cascode stage is used for the driver and for the output stage. At 2.7 V, 3.6 V, and 5 V supply voltage a maximum output power of 21.9 dBm, 24 dBm and 26 dBm at 5.8 GHz is achieved. The small-signal gain is 20 dB

CMOS and SiGe Bipolar Circuits for High-Speed Applications

Recently, CMOS has been demonstrated to be a viable technology for very-high-bit-rate broadband and wireless communication systems up to 40 Gb/s and 50 GHz. Advances in device scaling and doping-profile optimization have also resulted n SiGe bipolar transistors with impressive performance, includ-ing cut-off frequencies of more than 200 GHz. This paper presents advances in circuit design which fully exploit the high-speed potential of a 0.13 µm CMOS technology up to 50 GHz and of a high-performance SiGe bipolar technology up to 110 GHz oper-ating frequency. The combination of advanced circuit techniques and a state-of-the-art fabrication-process technology results in continuing the upward shift of the frequency limits

A4.8-6 GHz IEEE 802.11a WLAN SiGe-bipolar power amplifier with On-chip output matching

A fully integrated 4.8-6 GHz Wireless LAN SiGebipolar power amplifier chip requiring no external components was realized using the small die size of only 1x0.9 mm2. At 1V to 2.4V, the maximum out put power level is 19 dBm (22%PAE) to 26.3 dBm(28.5%PAE) at 5.25GHz with a maximum small signal gain of 33 dB. The maximum average out put power for a maximum 3%Error Vector Magnitude (EVM)is 16 dBm.The PA survives a VSWR of 50