19,115 research outputs found
Photovoltage Detection of Edge Magnetoplasmon Oscillations and Giant Magnetoplasmon Resonances in A Two-Dimensional Hole System
In our high mobility p-type AlGaAs/GaAs two-dimensional hole samples, we
originally observe the B-periodic oscillation induced by microwave (MW) in
photovoltage (PV) measurements. In the frequency range of our measurements (5 -
40 GHz), the period ({\Delta}B) is inversely proportional to the microwave
frequency (f). The distinct oscillations come from the edge magnetoplasmon
(EMP) in the high quality heavy hole system. In our hole sample with a very
large effective mass, the observation of the EMP oscillations is in neither the
low frequency limit nor the high frequency limit, and the damping of the EMP
oscillations is very weak under high magnetic fields. Simultaneously, we
observe the giant plasmon resonance signals in our measurements on the shallow
two-dimensional hole system (2DHS)
The explicit expression of the fugacity for weakly interacting Bose and Fermi gases
In this paper, we calculate the explicit expression for the fugacity for two-
and three-dimensional weakly interacting Bose and Fermi gases from their
equations of state in isochoric and isobaric processes, respectively, based on
the mathematical result of the boundary problem of analytic functions --- the
homogeneous Riemann-Hilbert problem. We also discuss the Bose-Einstein
condensation phase transition of three-dimensional hard-sphere Bose gases.Comment: 24 pages, 9 figure
Functional kernel estimators of conditional extreme quantiles
We address the estimation of "extreme" conditional quantiles i.e. when their
order converges to one as the sample size increases. Conditions on the rate of
convergence of their order to one are provided to obtain asymptotically
Gaussian distributed kernel estimators. A Weissman-type estimator and kernel
estimators of the conditional tail-index are derived, permitting to estimate
extreme conditional quantiles of arbitrary order.Comment: arXiv admin note: text overlap with arXiv:1107.226
Dissipationless Anomalous Hall Current in Films
The observation of dissipationless anomalous Hall current is one of the
experimental evidences to confirm the intrinsic origin of anomalous Hall
effect. To study the origin of anomalous Hall effect in iron,
Fe(SiO) granular films with volume fraction of SiO
0\le x \le 40.51 were fabricated using co-sputtering. Hall and longitudinal
resistivities were measured in the temperature range 5 to 350 K with magnetic
fields up to 5 Tesla. As x increased from 0 to 40.51, the anomalous Hall
resistivity and longitudinal resistivity increased about 4 and 3 orders in
magnitude, respectively. Analysis of the results revealed that the normalized
anomalous Hall conductivity is a constant for all the samples, the evidence of
dissipationless anomalous Hall current in Fe.Comment: 17 pages, 5 figures;
http://link.aps.org/doi/10.1103/PhysRevB.83.20531
Structural Characterization of Rapid Thermal Oxidized Si\u3csub\u3e1−x−y\u3c/sub\u3eGe\u3csub\u3ex\u3c/sub\u3eC\u3csub\u3ey\u3c/sub\u3e Alloy Films Grown by Rapid Thermal Chemical Vapor Deposition
The structural properties of as-grown and rapid thermal oxidized Si1−x−yGexCy epitaxial layers have been examined using a combination of infrared, x-ray photoelectron, x-ray diffraction, secondary ion mass spectroscopy, and Raman spectroscopy techniques. Carbon incorporation into the Si1−x−yGexCy system can lead to compressive or tensile strain in the film. The structural properties of the oxidized Si1−x−yGexCy film depend on the type of strain (i.e., carbon concentration) of the as-prepared film. For compressive or fully compensated films, the oxidation process drastically reduces the carbon content so that the oxidized films closely resemble to Si1−xGex films. For tensile films, two broad regions, one with carbon content higher and the other lower than that required for full strain compensation, coexist in the oxidized films
Spectroscopic ellipsometry and electrical studies of as-grown and rapid thermal oxidized Si\u3csub\u3e1−x−y\u3c/sub\u3eGe\u3csub\u3ex\u3c/sub\u3eC\u3csub\u3ey\u3c/sub\u3e films
Transmission electron microscopy results showed the formation of SiC precipitation in a rapid thermally oxidized (RTO) Si1−x−yGexCy sample with high-C content. The spectroscopic ellipsometry results showed that the E1 gap increased and E2 gap decreased as the C concentration increased. For the oxidized samples, the amplitude of the E2 transitions reduced rapidly and the E1 transition shifted to a lower energy. The reduction in the E2 transitions was due to the presence of the oxide layer. A high-Ge content layer and the low-C content in the RTO films accounted for the E1 shift to lower energy. The electrical measurements showed that RTO at 800 °C did not improve the oxide quality as compared to 1000 °C
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