Optical polarization of localized hole spins in p-doped quantum wells

The initialization of spin polarization in localized hole states is investigated using time-resolved Kerr rotation. We find that the sign of the polarization depends on the magnetic field, and the power and the wavelength of the circularly polarized pump pulse. An analysis of the spin dynamics and the spin-initialization process shows that two mechanisms are responsible for spin polarization with opposite sign: The difference of the g factor between the localized holes and the trions, as well as the capturing process of dark excitons by the localized hole states.Comment: 4 pages, 2 figure

Hybrid Quantum Dot-2D Electron Gas Devices for Coherent Optoelectronics

We present an inverted GaAs 2D electron gas with self-assembled InAs quantum dots in close proximity, with the goal of combining quantum transport with quantum optics experiments. We have grown and characterized several wafers -- using transport, AFM and optics -- finding narrow-linewidth optical dots and high-mobility, single subband 2D gases. Despite being buried 500 nm below the surface, the dots are clearly visible on AFM scans, allowing precise localization and paving the way towards a hybrid quantum system integrating optical dots with surface gate-defined nanostructures in the 2D gas.Comment: 4 pages, 5 figures (color

Efficient quantum dot single photon extraction into an optical fiber using a nanophotonic directional coupler

We demonstrate a spectrally broadband and effcient technique for collecting photoluminescence from a single InAs quantum dot directly into a standard single mode optical fiber. In this approach, an optical fiber taper waveguide is placed in contact with a suspended GaAs nanophotonic waveguide with embedded quantum dots, forming an effcient and broadband directional coupler with standard optical fiber input and output. Effcient photoluminescence collection over a wavelength range of tens of nanometers is demonstrated, and a maximum collection effciency of 6.05 % (corresponding single photon rate of 3.0 MHz) into a single mode optical fiber was estimated for a single quantum dot exciton

Drift mobility of long-living excitons in coupled GaAs quantum wells

We observe high-mobility transport of indirect excitons in coupled GaAs quantum wells. A voltage-tunable in-plane potential gradient is defined for excitons by exploiting the quantum confined Stark effect in combination with a lithographically designed resistive top gate. Excitonic photoluminescence resolved in space, energy, and time provides insight into the in-plane drift dynamics. Across several hundreds of microns an excitonic mobility of >10^5 cm2/eVs is observed for temperatures below 10 K. With increasing temperature the excitonic mobility decreases due to exciton-phonon scattering.Comment: 3 pages, 3 figure

Magnetoresistance Induced by Rare Strong Scatterers in a High Mobility 2DEG

We observe a strong negative magnetoresistance at non-quantizing magnetic fields in a high-mobility two-dimensional electron gas (2DEG). This strong negative magnetoresistance consists of a narrow peak around zero magnetic field and a huge magnetoresistance at larger fields. The peak shows parabolic magnetic field dependence and is attributed to the interplay of smooth disorder and rare strong scatterers. We identify the rare strong scatterers as macroscopic defects in the material and determine their density from the peak curvature.Comment: 5 pages, 4 figure

Spin-sensitive Bleaching and Spin-Relaxation in QW's

Spin-sensitive saturation of absorption of infrared radiation has been investigated in p-type GaAs QWs. It is shown that the absorption saturation of circularly polarized radiation is mostly controlled by the spin relaxation time of the holes. The saturation behavior has been investigated for different QW widths and in dependence on the temperature with the result that the saturation intensity substantially decreases with narrowing of QWs. Spin relaxation times were experimentally obtained by making use of calculated (linear) absorption coefficients for inter-subband transitions