CAIR: Using Formal Languages to Study Routing, Leaking, and Interception in BGP

The Internet routing protocol BGP expresses topological reachability and policy-based decisions simultaneously in path vectors. A complete view on the Internet backbone routing is given by the collection of all valid routes, which is infeasible to obtain due to information hiding of BGP, the lack of omnipresent collection points, and data complexity. Commonly, graph-based data models are used to represent the Internet topology from a given set of BGP routing tables but fall short of explaining policy contexts. As a consequence, routing anomalies such as route leaks and interception attacks cannot be explained with graphs. In this paper, we use formal languages to represent the global routing system in a rigorous model. Our CAIR framework translates BGP announcements into a finite route language that allows for the incremental construction of minimal route automata. CAIR preserves route diversity, is highly efficient, and well-suited to monitor BGP path changes in real-time. We formally derive implementable search patterns for route leaks and interception attacks. In contrast to the state-of-the-art, we can detect these incidents. In practical experiments, we analyze public BGP data over the last seven years

Critical Currents, Pinning Forces and Irreversibility Fields in (YxTml-x)Ba2Cu3O7 Single Crystals with Columnar Defects in Fields up to 50 T

We have studied the influence of columnar defects, created by heavy-ion (Kr) irradiation with doses up to 6 10^11 Kr-ions/cm2, on the superconducting critical parameters of single crystalline (YxTm1-x)Ba2Cu3O7. Magnetisation measurements in pulsed fields up to 50 T in the temperature range 4.2 - 90 K revealed that: (i) in fields up to T the critical current Jc(H,T) is considerably enhanced and (ii) down to temperatures T ~ 40 K the irreversibility field Hirr(T) is strongly increased. The field range and magnitude of the Jc(H,T) and Hirr(T) enhancement increase with increasing irradiation dose. To interpret these observations, an effective matching field was defined. Moreover, introducing columnar defects also changes the pinning force fp qualitatively. Due to stronger pinning of flux lines by the amorphous defects, the superconducting critical parameters largely exceed those associated with the defect structures in the unirradiated as-grown material: Jc,irrad(77 K, 5 T) ^3 10* Jc,ref(77 K, 5 T).Comment: 11 pages, all PDF, contribution to Physica

Depth concentrations of deuterium ions implanted into some pure metals and alloys

Pure metals (Cu, Ti, Zr, V, Pd) and diluted Pd-alloys (Pd-Ag, Pd-Pt, Pd-Ru, Pd-Rh) were implanted by 25 keV deuterium ions at fluences in the range (1.2{\div}2.3)x1022 D+/m2. The post-treatment depth distributions of deuterium ions were measured 10 days and three months after the implantation using Elastic Recoil Detection Analysis (ERDA) and Rutherford Backscattering (RBS). Comparison of the obtained results allowed to make conclusions about relative stability of deuterium and hydrogen gases in pure metals and diluted Pd alloys. Very high diffusion rates of implanted deuterium ions from V and Pd pure metals and Pd alloys were observed. Small-angle X-ray scattering revealed formation of nanosized defects in implanted corundum and titanium.Comment: 12 pages, 9 figure

The 21Na(p,gamma)22Mg Reaction and Oxygen-Neon Novae

The 21Na(p,gamma)22Mg reaction is expected to play an important role in the nucleosynthesis of 22Na in Oxygen-Neon novae. The decay of 22Na leads to the emission of a characteristic 1.275 MeV gamma-ray line. This report provides the first direct measurement of the rate of this reaction using a radioactive 21Na beam, and discusses its astrophysical implications. The energy of the important state was measured to be E$_{c.m.}$= 205.7 $\pm$ 0.5 keV with a resonance strength $\omega\gamma = 1.03\pm0.16_{stat}\pm0.14_{sys}$ meV.Comment: Accepted for publication in Physical Review Letter

On the optical properties of Ag^{+15} ion-beam irradiated TiO_{2} and SnO_{2} thin films

The effects of 200-MeV Ag^{+15} ion irradiation on the optical properties of TiO_{2} and SnO_{2} thin films prepared by using the RF magnetron sputtering technique were investigated. These films were characterized by using UV-vis spectroscopy, and with increasing irradiation fluence, the transmittance for the TiO_{2} films was observed to increase systematically while that for SnO_{2} was observed to decrease. Absorption spectra of the irradiated samples showed minor changes in the indirect bandgap from 3.44 to 3.59 eV with increasing irradiation fluence for TiO_{2} while significant changes in the direct bandgap from 3.92 to 3.6 eV were observed for SnO_{2}. The observed modifications in the optical properties of both the TiO_{2} and the SnO_{2} systems with irradiation can be attributed to controlled structural disorder/defects in the system.Comment: 6 pages, ICAMD-201

Evidence of Josephson-coupled superconducting regions at the interfaces of Highly Oriented Pyrolytic Graphite

Transport properties of a few hundreds of nanometers thick (in the graphene plane direction) lamellae of highly oriented pyrolytic graphite (HOPG) have been investigated. Current-Voltage characteristics as well as the temperature dependence of the voltage at different fixed input currents provide evidence for Josephson-coupled superconducting regions embedded in the internal two-dimensional interfaces, reaching zero resistance at low enough temperatures. The overall behavior indicates the existence of superconducting regions with critical temperatures above 100 K at the internal interfaces of oriented pyrolytic graphite.Comment: 6 Figures, 5 page

Ion-beam-induced reconstruction of amorphous GaN

Wurtzite GaN can be rendered amorphous by high-dose heavy-ion bombardment. We show here that relatively low-dose reirradiation of such amorphous GaN (a-GaN) with MeV light ions can significantly change some of the physical properties of a-GaN. In particular, light-ion reirradiation of a-GaN results in (i) an increase in material density, (ii) the suppression of complete decomposition during postimplantation annealing, (iii) a significant increase in the values of hardness and Young's modulus, and (iv) an apparent decrease in the absorption of visible light. Transmission electronmicroscopy shows that a-GaN remains completely amorphous after light-ion reirradiation. Therefore, we attribute the above effects of light-ion reirradiation to an ion-beam-induced atomic-level reconstruction of the amorphous phase. Results indicate that electronic energy loss of light ions is responsible for the changes in the mechanical properties and for the suppression of thermally induced decomposition of a-GaN. However, the changes in the density of a-GaN appear to be controlled by the nuclear energy loss of light ions

Damage buildup in GaN under ion bombardment

The damage buildup until amorphization in wurtzite GaN films under keV Light(C-12) and heavy (Au-197) ion bombardment at room and liquid nitrogen (LN2) temperatures is studied by Rutherford backscattering/channeling (RBS/C) spectrometry and transmission electron microscopy (TEM). The effect of beam flux on implantation damage in GaN is reported. A marked similarity between damage buildup for Light and heavy ion bombardment regimes is observed. The results point to substantial dynamic annealing of irradiation defects even during heavy ion bombardment at LN2 temperature. Amorphization starts from the GaN surface with increasing ion dose for both LN2 and room-temperature bombardment with light or heavy ions. A strong surface defect peak, seen by RBS/C, arises from an amorphous layer at the GaN surface, as indicated by TEM. The origin of such an amorphous layer is attributed to the trapping of mobile point defects by the GaN surface, as suggested by the flux behavior. However, in the samples implanted with light ions to low doses (1 X 10(15) cm(-2)), no amorphous layer on the GaN surface is revealed by TEM. Damage buildup is highly sig-modal for LN: temperature irradiation with light or heavy ions. Formation of planar defects in the crystal bulk is assumed to provide a "nucleation site" for amorphization with increasing ion dose during irradiation at LN2 temperature. For room-temperature bombardment with heavy ions. the damage in the GaN bulk region saturates at a level lower than that of the amorphous phase, as measured by RBS/C, and amorphization proceeds From the GaN surface with increasing ion dose. For such a saturation regime at room temperature, implantation damage in the bulk consists of point-defect clusters and planar defects which are parallel to the basal plane of the GaN film. Various defect interaction processes in GaN during ion bombardment are proposed to explain the observed somewhat unexpected behavior of disorder buildup