Quantum Phase Slips in Granular Aluminum Nanowires

Over the last decades, superconducting nanowires have developed from a playground for fundamental research to a promising key element for various applications, including superinductors, qubits or quantum transistors. The wide range of electrical properties is due to the quantum phase slip (QPS) effect, a process during which the phase of the superconducting order parameter can slip by 2$\pi$. Each phase slip can be associated with a fluxon tunneling across the wire and therefore be seen as the dual to the tunneling of Cooper pairs in Josephson junctions. Depending on the QPS amplitude, the electrical response of a wire can range from a purely inductive to a capacitive one. In particular, the duality between these phase slip junctions and Josephson junctions, which have become a basic building block of modern quantum circuits, has triggered a variety of theoretical and experimental works. Many aspects of these fluctuations are still not fully understood. Furthermore, the parameter spread of the nanowires\u27 properties turned out to be a limiting factor for experimental implementations, especially when more than one wire is involved. In this work, we investigate quantum phase slips in nanowires made from granular aluminum. We demonstrate that the normal state resistance of single wires can be reduced by orders of magnitude, using the newly developed method "intrinsic electromigration". With this new degree of freedom, we are able to study the influence of the phase slip amplitude on the transport behaviour of a wire and compare it with microscopic theories. Special attention is put on the phase slip driven superconductor to insulator transition (SIT). To probe the coherent nature of quantum phase slips and to further investigate the SIT, we developed a quantum phase slip interferometer based on two strongly coupled wires connected in series. The interference pattern is controlled by a gate voltage and manifests as a periodic modulation of the critical Coulomb blockade voltage. For strong, destructive interference of quantum phase slips, a transition from the insulating to a superconducting state is observed. The simple design of the device as well as the large available parameter range make it an interesting device also for applications beyond fundamental research like e.g a transistor for information processing, a particle detector or as a nonlinear capacitor

Random telegraph fluctuations in granular microwave resonators

Microwave circuit electrodynamics of disordered superconductors is a very active research topic spawning a wide range of experiments and applications. For compact superconducting circuit elements, the transition to an insulating state poses a limit to the maximum attainable kinetic inductance. It is therefore vital to study the fundamental noise properties of thin films close to this transition, particularly in situations where a good coherence and temporal stability is required. In this paper, we present measurements on superconducting granular aluminum microwave resonators with high normal state resistances, where the influence of the superconductor to insulator phase transition is visible. We trace fluctuations of the fundamental resonance frequency and observe, in addition to a 1/f noise pattern, a distinct excess noise, reminiscent of a random telegraph signal. The excess noise shows a strong dependency on the resistivity of the films as well as the sample temperature, but not on the applied microwave power.Comment: 6 pages, 4 figure

Observation of giant two-level systems in a granular superconductor

Disordered thin films are a common choice of material for superconducting, high impedance circuits used in quantum information or particle detector physics. A wide selection of materials with different levels of granularity are available, but, despite low microwave losses being reported for some, the high degree of disorder always implies the presence of intrinsic defects. Prominently, quantum circuits are prone to interact with two-level systems (TLS), typically originating from solid state defects in the dielectric parts of the circuit, like surface oxides or tunneling barriers. We present an experimental investigation of TLS in granular aluminum thin films under applied mechanical strain and electric fields. The analysis reveals a class of strongly coupled TLS having electric dipole moments up to 30 eA, an order of magnitude larger than dipole moments commonly reported for solid state defects. Notably, these large dipole moments appear more often in films with a higher resistivity. Our observations shed new light on granular superconductors and may have implications for their usage as a quantum circuit material.Comment: 12 pages, 8 figure

Current-Resistance Effects Inducing Nonlinear Fluctuation Mechanisms in Granular Aluminum Oxide Nanowires

The unusual superconducting properties of granular aluminum oxide have been recently investigated for application in quantum circuits. However, the intrinsic irregular structure of this material requires a good understanding of the transport mechanisms and, in particular, the effect of disorder, especially when patterned at the nanoscale level. In view of these aspects, electric transport and voltage fluctuations have been investigated on thin-film based granular aluminum oxide nanowires, in the normal state and at temperatures between 8 and 300 K. The nonlinear resistivity and two-level tunneling fluctuators have been observed. Regarding the nature of the noise processes, the experimental findings give a clear indication in favor of a dynamic random resistor network model, rather than the possible existence of a local ordering of magnetic origin. The identification of the charge carrier fluctuations in the normal state of granular aluminum oxide nanowires is very useful for improving the fabrication process and, therefore, reducing the possible sources of decoherence in the superconducting state, where quantum technologies that are based on these nanostructures should work

Fluxons in high-impedance long Josephson junctions

The dynamics of fluxons in long Josephson junctions is a well-known example of soliton physics and allows for studying highly nonlinear relativistic electrodynamics on a microscopic scale. Such fluxons are supercurrent vortices that can be accelerated by bias current up to the Swihart velocity, which is the characteristic velocity of electromagnetic waves in the junction. We experimentally demonstrate slowing down relativistic fluxons in Josephson junctions whose bulk superconducting electrodes are replaced by thin films of a high kinetic inductance superconductor. Here, the amount of magnetic flux carried by each supercurrent vortex is significantly smaller than the magnetic flux quantum $_0$. Our data show that the Swihart velocity is reduced by about one order of magnitude compared to conventional long Josephson junctions. At the same time, the characteristic impedance is increased by an order of magnitude, which makes these junctions suitable for a variety of applications in superconducting electronics

Fluxons in high-impedance long Josephson junctions

The dynamics of fluxons in long Josephson junctions is a well-known example of soliton physics and allows for studying highly nonlinear relativistic electrodynamics on a microscopic scale. Such fluxons are supercurrent vortices that can be accelerated by bias current up to the Swihart velocity, which is the characteristic velocity of electromagnetic waves in the junction. We experimentally demonstrate slowing down relativistic fluxons in Josephson junctions whose bulk superconducting electrodes are replaced by thin films of a high kinetic inductance superconductor. Here, the amount of magnetic flux carried by each supercurrent vortex is significantly smaller than the magnetic flux quantum $_0$. Our data show that the Swihart velocity is reduced by about one order of magnitude compared to conventional long Josephson junctions. At the same time, the characteristic impedance is increased by an order of magnitude, which makes these junctions suitable for a variety of applications in superconducting electronics

Microscopic quantum point contact formation as the electromigration mechanism in granular superconductor nanowires

Granular aluminium is a high kinetic inductance thin film superconductor which, when formed into nanowires can undergo an intrinsic electromigration process. We use a combination of experimental and computational approaches to investigate the role of grain morphology and distribution in granular aluminium thin films, when formed into nanowire constrictions. Treating the granular aluminium film as a network of randomly distributed resistors with parameters motivated by the film microstructure allows us to model the electrical characteristics of the nanowires. This model provides estimates of the dependence of sheet resistance on grain size and distribution, and the resulting device to device variation for superconducting nanowires. By fabricating a series of different length nanowires, we study the electromigration process as a function of applied current, and then compare directly to the results of our computational model. In doing so we show that the electromigration is driven by the formation of quantum point contacts between metallic aluminium grains.Comment: 11 pages, 11 figure

Microscopic quantum point contact formation as the electromigration mechanism in granular superconductor nanowires

Granular aluminium is a high kinetic inductance thin film superconductor which, when formed into nanowires can undergo an intrinsic electromigration process. We use a combination of experimental and computational approaches to investigate the role of grain morphology and distribution in granular aluminium thin films, when formed into nanowire constrictions. Treating the granular aluminium film as a network of randomly distributed resistors with parameters motivated by the film microstructure allows us to model the electrical characteristics of the nanowires. This model provides estimates of the dependence of sheet resistance on grain size and distribution, and the resulting device to device variation for superconducting nanowires. By fabricating a series of different length nanowires, we study the electromigration process as a function of applied current, and then compare directly to the results of our computational model. In doing so we show that the electromigration is driven by the formation of quantum point contacts between metallic aluminium grains