Method and apparatus for measuring minority carrier lifetimes and bulk diffusion length in P-N junction solar cells

Carrier lifetimes and bulk diffusion length are qualitatively measured as a means for qualification of a P-N junction photovoltaic solar cell. High frequency (blue) monochromatic light pulses and low-frequency (red) monochromatic light pulses were alternately applied to the cell while it was irradiated by light from a solar simulator, and synchronously displaying the derivative of the output voltage of the cell on an oscilloscope. The output voltage is a measure of the lifetimes of the minority carriers (holes) in the diffused N layer and majority carriers (electrons) in the bulk P material, and of the diffusion length of the bulk silicon. By connecting a reference cell in this manner with a test cell to be tested in reverse parallel, the display of a test cell that matches the reference cell will be a substantially zero output

Mathematical analysis of the Photovoltage Decay (PVD) method for minority carrier lifetime measurements

When the diffusion length of minority carriers becomes comparable with or larger than the thickness of a p-n junction solar cell, the characteristic decay of the photon-generated voltage results from a mixture of contributions with different time constants. The minority carrier recombination lifetime tau and the time constant l(2)/D, where l is essentially the thickness of the cell and D the minority carrier diffusion length, determine the signal as a function of time. It is shown that for ordinary solar cells (n(+)-p junctions), particularly when the diffusion length L of the minority carriers is larger than the cell thickness l, the excess carrier density decays according to exp (-t/tau-pi(2)Dt/4l(2)), tau being the lifetime. Therefore, tau can be readily determined by the photovoltage decay method once D and L are known

An investigation of impurity centers in semiconductors of variable composition. Part 1: General theory and some applications

A theory of deep point defects imbedded in otherwise perfect semiconductor crystals is developed with the aid of pseudopotentials. The dominant short-range forces engendered by the impurity are sufficiently weakened in all cases where the cancellation theorem of the pseudopotential formalism is operative. Thus, effective-mass-like equations exhibiting local effective potentials derived from nonlocal pseudopotentials are shown to be valid for a large class of defects. A two-band secular determinant for the energy eigenvalues of deep defects is also derived from the set of integral equations which corresponds to the set of differential equations of the effective-mass type. Subsequently, the theory in its simplest form, is applied to the system Al(x)Ga(1-x)As:Se. It is shown that the one-electron donor level of Se within the forbidden gap of Al(x)Ga(1-x)As as a function of the AlAs mole fraction x reaches its maximum of about 300 meV (as measured from the conduction band edge) at the cross-over from the direct to the indirect band-gap at x = 0.44 in agreement with experiments

Advanced multilateration theory, software development, and data processing: The MICRODOT system

The process of geometric parameter estimation to accuracies of one centimeter, i.e., multilateration, is defined and applications are listed. A brief functional explanation of the theory is presented. Next, various multilateration systems are described in order of increasing system complexity. Expected systems accuracy is discussed from a general point of view and a summary of the errors is listed. An outline of the design of a software processing system for multilateration, called MICRODOT, is presented next. The links of this software, which can be used for multilateration data simulations or operational data reduction, are examined on an individual basis. Functional flow diagrams are presented to aid in understanding the software capability. MICRODOT capability is described with respect to vehicle configurations, interstation coordinate reduction, geophysical parameter estimation, and orbit determination. Numerical results obtained from MICRODOT via data simulations are displayed both for hypothetical and real world vehicle/station configurations such as used in the GEOS-3 Project. These simulations show the inherent power of the multilateration procedure

A 3-D Multilateration: A Precision Geodetic Measurement System

A system was designed with the capability of determining 1-cm accuracy station positions in three dimensions using pulsed laser earth satellite tracking stations coupled with strictly geometric data reduction. With this high accuracy, several crucial geodetic applications become possible, including earthquake hazards assessment, precision surveying, plate tectonics, and orbital determination

Three-D multilateration: A precision geodetic measurement system

A technique of satellite geodesy for determining the relative three dimensional coordinates of ground stations within one centimeter over baselines of 20 to 10,000 kilometers is discussed. The system is referred to as 3-D Multilateration and has applications in earthquake hazard assessment, precision surveying, plate tectonics, and orbital mechanics. The accuracy is obtained by using pulsed lasers to obtain simultaneous slant ranges between several ground stations and a moving retroreflector with known trajectory for aiming the lasers