4 research outputs found

    Ion-Beam Synthesis of Structure-Oriented Iron Nanoparticles in Single-Crystalline Rutile TiO<sub>2</sub>

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    Magnetic nanoparticles embedded into semiconductors have current perspectives for use in semiconducting spintronics. In this work, 40 keV Fe+ ions were implanted in high fluences of (0.5 ÷ 1.5) × 1017 ion/cm2 into an oxide semiconductor and single-crystalline TiO2 plates of rutile structure with (100) or (001) face orientations. Microstructure, elemental-phase composition, and magnetic properties of the Fe-ion-implanted TiO2 were studied by scanning and transmission electron microscopies (SEM and TEM), X-ray photoelectron (XPS) and Rutherford backscattering (RBS) spectroscopies, as well as vibrating-sample magnetometry (VSM). The high-fluence ion implantation results in the formation of magnetic nanoparticles of metallic iron beneath the irradiated surface of rutile. The induced ferromagnetism and observed two- or four-fold magnetic anisotropy are associated with the endotaxial growth of Fe nanoparticles oriented along the crystallographic axes of TiO2

    A magnetically-induced Coulomb gap in graphene due to electron-electron interactions

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    Insights into the fundamental properties of graphene’s Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagonal boron nitride (hBN) is sandwiched between two layers of high purity graphene. Here, we show that when a single defect is present within the hBN tunnel barrier, it can inject electrons into the graphene layers and its sharply defined energy level acts as a high resolution spectroscopic probe of electron-electron interactions in graphene. We report a magnetic field dependent suppression of the tunnel current flowing through a single defect below temperatures of ~2 K. This is attributed to the formation of a magnetically-induced Coulomb gap in the spectral density of electrons tunnelling into graphene due to electron-electron interactions.</p
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