Kinetics of ferroelectric switching in ultrathin films

The kinetics of polarization switching in ultrathin ferroelectric polymer films exhibit a critical behavior; there is a pronounced slowing just above the coercive field and just below the critical temperature. The critical slowing is observed in the switching kinetics of ferroelectric Langmuir-Blodgett films of 70% vinylidene-fluoride and 30% trifluoroethylene copolymer with thickness up to 30 ML. Thicker films exhibit an exponential dependence on the field and temperature that is normally associated with extrinsic switching by domain nucleation and growth. We show that the critical behavior arises naturally from the dynamics of homogeneous intrinsic switching in the context of mean-field theory. These results have important implications for the modeling and control of the ferroelectric films in nonvolatile computer memories and solid-state data storage media

Switching in One Monolayer of the Ferroelectric Polymer

The switching in one monolayer of ferroelectric vinylidene fluoride-trifluoroethylene copolymer P[VDF-TrFE] is observed. The kinetics of switching is well described by Landau- Khalatnikov (LK) equation. The paper is devoted to the 75th anniversary of Prof. Lemanov’s birthday

Ferroelectricity at molecular level

he synthesis of ultrathin ferroelectric nanostructures by the Langmuir-Blodgett method and their properties are reviewed. It is shown that ferroelectricity exists in one monolayer of the ferroelectric P(VDF-TrFE) copolymer, i.e., at the molecular level. The specific characteristics of switching of ultrathin ferroelectric films are established