10 research outputs found

    Dynamical characterization of monolithic MOPAs emitting at 1.5 μ�m

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    Eye-safety requirements in important applications like LIDAR or Free Space Optical Communications make specifically interesting the generation of high power, short optical pulses at 1.5 um. Moreover, high repetition rates allow reducing the error and/or the measurement time in applications involving pulsed time-of-flight measurements, as range finders, 3D scanners or traffic velocity controls. The Master Oscillator Power Amplifier (MOPA) architecture is an interesting source for these applications since large changes in output power can be obtained at GHz rates with a relatively small modulation of the current in the Master Oscillator (MO). We have recently demonstrated short optical pulses (100 ps) with high peak power (2.7 W) by gain switching the MO of a monolithically integrated 1.5 um MOPA. Although in an integrated MOPA the laser and the amplifier are ideally independent devices, compound cavity effects due to the residual reflectance at the different interfaces are often observed, leading to modal instabilities such as self-pulsations

    Monolithic master oscillator power amplifier at 1.58 µm for lidar measurements

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    Nowadays the interest in high power semiconductor devices is growing for applications such as telemetry, lidar system or free space communications. Indeed semiconductor devices can be an alternative to solid state lasers because they are more compact and less power consuming. These characteristics are very important for constrained and/or low power supply environment such as airplanes or satellites. Lots of work has been done in the 800-1200 nm range for integrated and free space Master Oscillator Power Amplifier (MOPA) [1]-[3]. At 1.5 ?m, the only commercially available MOPA is from QPC [4]: the fibred output power is about 700 mW and the optical linewidth is 500 kHz. In this paper, we first report on the simulations we have done to determine the appropriate vertical structure and architecture for a good MOPA at 1.58 ?m (section II). Then we describe the fabrication of the devices (section III). Finally we report on the optical and electrical measurements we have done for various devices (section IV)

    Modulation characteristics of a three-section master oscillator power amplifier at 1.5 ÎĽm

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    Direct optical modulation of a 1.55 ?m three-section Master Oscillator Power Amplifier has been demonstrated. The temporal response, the optical spectra and the optical modulation amplitude have been analyzed as a function of the frequency and the modulating amplitude. For low modulation amplitude, no spectral broadening was observed up to 1.5 GHz. However, at 12.5 MHz an optical broadening of ~ 4 pm was observed for high modulation amplitudes. At this frequency an extinction ratio of 42 dB has been achieved. The modulation amplitude degrades for frequency values higher than 30 MHz. The device performance under modulation at 12.5 MHz is interesting for its application as laser source for CO2 detection by differential absorption LIDAR operating in the Continuous Wave Random Modulation mode

    All-semiconductor master oscillator power amplifier at 1.5 um for high power applications

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    High power (> 0.5 W) single-mode frequency laser at 1.55 ÎĽm are nowadays key components for a large number of applications such as lidar systems, telemetry or free-space communications. For this level of power, the most suitable and available sources are solid-state lasers and fiber lasers. Semiconductor devices, which are more compact and more efficient, have still to demonstrate very high power operation to be a credible competitor. In order to obtain these levels of power with semiconductor devices, the more suitable device seems to be the Master Oscillator Power Amplifier (MOPA). Single-mode emission is generated by a Distributed Feedback laser (DFB) and the signal is then amplified with a Power Amplifier (PA). To avoid complex optical coupling and to simplify the packaging, it is possible to integrate on the same chip the laser and the amplifier. The main challenges are the fabrication of the multi-section device (at least 2 sections: one for the laser and one for the amplifier) and the reduction of the reflections. Indeed the facet and the internal reflections can create multiple cavities behavior and disturb the laser single-mode emission. In this contribution, we report the realization of a 3-section monolithic MOPA on InP

    Dynamic response of a monolithic master-oscillator power-amplifier at 1.5 µm

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    We study experimentally the dynamic properties of a fully integrated high power master-oscillator power-amplifier emitting at 1.5 ÎĽm under continuous wave and gain-switching conditions. High peak power (2.7 W) optical pulses with short duration (~ 110 ps) have been generated by gain switching the master-oscillator. We show the existence of working points at very close driving conditions with stable or unstable regimes caused by the compound cavity effects. The optical and radio-frequency spectra of stable and unstable operating points are analyzed
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