1 research outputs found
Passivation of Germanium by Graphene
The
oxidation of Ge covered with graphene that is either grown on or transferred
to the surface is investigated by X-ray photoelectron spectroscopy,
Raman spectroscopy, and transmission electron microscopy. Graphene
properly grown by chemical vapor deposition on Ge(100), (111), or
(110) effectively inhibits room-temperature oxidation of the surface.
When graphene is transferred to the Ge surface, oxidation is reduced
relative to that on uncovered Ge but has the same power law dependence.
We conclude that access to the graphene/Ge interface must occur via
defects in the graphene. The excellent passivation provided by graphene
grown on Ge should enhance applications of Ge in the electronic-device
industr