Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers

International audienceQuantum dot (QD) lasers exhibit many interesting and useful properties such as low threshold current, temperature insensitivity or chirpless behavior. In order to reach the standards of long-haul optical transmissions, 1.55 μm InAs QD lasers on InP substrate have been developed. Based on time resolved photoluminescence (PL) measurements, carrier dynamics behavior is at first investigated. Electroluminescence (EL) results are then shown at room temperature exhibiting a laser emission centered at 1.61 μm associated to a threshold current density as low as 820 A/cm2 for a six InAs QD stacked layers. Finally, a rate equation model based on the reservoir theory is used to model both time-resolved photoluminescence (TRPL) and electroluminescence results. It is shown that carrier dynamic calculations are in a good agreement with measurements since the saturation effect occurring at high injected power is clearly predicted

Modelling of the two-state lasing and the turn-on delay in 1.55 mm InAs/InP (113)B quantum dot lasers

International audienceNumerical models based on rate equations are used to study carrier dynamics in the two lowest energy levels of an InAs/InP (113)B quantum dot (QD) system. Two different theories are presented, one based on a cascade-relaxation model and the other using an additional efficient carrier relaxation. The comparison between these two theoretical approaches leads to a qualitative understanding of the origin of the two-state lasing in 1.55 mum InAs/InP (113)B (QD) lasers. In order to investigate the QD laser dynamics, numerical results for the turn-on delay of the double laser emission are also presented and discusse

Theoretical analysis of 1.55μm InAs/InP (311B) quantum dot lasers based on a multi-population rate equation model

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Carrier dynamics and saturation effect in (311)B InAs/InP quantum dot lasers

International audienc