27 research outputs found
Self-trapped electrons and holes in PbBr crystals
We have directly observed self-trapped electrons and holes in PbBr
crystals with electron-spin-resonance (ESR) technique. The self-trapped states
are induced below 8 K by two-photon interband excitation with pulsed
120-fs-width laser light at 3.10 eV. Spin-Hamiltonian analyses of the ESR
signals have revealed that the self-trapping electron centers are the dimer
molecules of Pb along the crystallographic a axis and the
self-trapping hole centers are those of Br with two possible
configurations in the unit cell of the crystal. Thermal stability of the
self-trapped electrons and holes suggests that both of them are related to the
blue-green luminescence band at 2.55 eV coming from recombination of spatially
separated electron-hole pairs.Comment: 8 pages (7 figures, 2 tables), ReVTEX; revised the text and figures
1, 4, and
Self-trapped states and the related luminescence in PbCl crystals
We have comprehensively investigated localized states of photoinduced
electron-hole pairs with electron-spin-resonance technique and
photoluminescence (PL) in a wide temperature range of 5-200 K. At low
temperatures below 70 K, holes localize on Pb ions and form
self-trapping hole centers of Pb. The holes transfer to other trapping
centers above 70 K. On the other hand, electrons localize on two Pb ions
at higher than 50 K and form self-trapping electron centers of Pb.
From the thermal stability of the localized states and PL, we clarify that
blue-green PL band at 2.50 eV is closely related to the self-trapped holes.Comment: 8 pages (10 figures), ReVTEX; removal of one figure, Fig. 3 in the
version
Advances in ab-initio theory of Multiferroics. Materials and mechanisms: modelling and understanding
Within the broad class of multiferroics (compounds showing a coexistence of
magnetism and ferroelectricity), we focus on the subclass of "improper
electronic ferroelectrics", i.e. correlated materials where electronic degrees
of freedom (such as spin, charge or orbital) drive ferroelectricity. In
particular, in spin-induced ferroelectrics, there is not only a {\em
coexistence} of the two intriguing magnetic and dipolar orders; rather, there
is such an intimate link that one drives the other, suggesting a giant
magnetoelectric coupling. Via first-principles approaches based on density
functional theory, we review the microscopic mechanisms at the basis of
multiferroicity in several compounds, ranging from transition metal oxides to
organic multiferroics (MFs) to organic-inorganic hybrids (i.e. metal-organic
frameworks, MOFs)Comment: 22 pages, 9 figure
Crystal growth, ionic conductivity, and photolysis of pure and impurity-doped lead bromide single crystals
In this paper an account is given of the preparation of lead bromide single crystals undoped and doped with monovalent and trivalent cations and with oxygen.
The conductivity of these crystals has been measured in the temperature region 50â300°C. The thermal disorder appeared to be of the same Schottky type as in lead chloride. From the slopes of the conductivity curves the activation heat for the anion vacancy migration has been calculated to be 0.29 ± 0.04 eV and the heat required for the formation of one set of vacancies 1.4 ± 0.1 eV.
Irradiation of pure lead bromide with ultraviolet light gives a characteristic damaging as is made visible by electron and optical microscopy. The increase of the optical density varies as the square root of the irradiation time
Photoconductivity in lead chloride and lead bromide
Photoconductivity measurements on PbCl2 and PbBr2 at liquid nitrogen temperature are described. It was found that the holes are the dominant mobile charge carriers in these crystals. The range per unit field was estimated to be 1.2 Ă 10-4 cm2/V for PbBr2. For PbCl2 the ranges are 4 Ă 10-4 cm2/V and 0.3 Ă 10-4 cm2/V for surface and bulk conductivity, respectively.
The wavelength dependence indicated that the first maximum at the long wavelength side of the fundamental absorption of PbBr2 and PbCl2 is an exciton peak
Charge transport in oxygen-doped polysilicon layers on Si
It is shown that layers of polysilicon doped with oxygen (polydox) can be used for the passivation of underlying p-n junctions. The conduction mechanism was derived from measurements in layers directly deposited on to silicon crystals. At room temperature we found Poole-Frenkel conduction changing at higher temperatures, presumably, to hopping in localized states
Charge transport in oxygen-doped polysilicon layers on Si
It is shown that layers of polysilicon doped with oxygen (polydox) can be used for the passivation of underlying p-n junctions. The conduction mechanism was derived from measurements in layers directly deposited on to silicon crystals. At room temperature we found Poole-Frenkel conduction changing at higher temperatures, presumably, to hopping in localized states.On montre que les couches minces de silicium polycristallin dopĂ© avec de l'oxygĂšne (polydox) peuvent ĂȘtre utilisĂ©es pour la passivation des jonctions p-n au-dessous des couches. Le mĂ©canisme de la conduction est dĂ©rivĂ© des mesures dans les couches minces dĂ©posĂ©es directement sur les cristaux de silicium. A la tempĂ©rature ambiante on trouve une conduction Poole-Frenkel et Ă une tempĂ©rature plus haute on a probablement une conduction par les sauts d'un piĂšge localisĂ© Ă l'autre