Imaging of an active LANR quantum electronic component by CR-39

Abstract only.CR-39 has been used by gas and aqueous codeposition LANR systems. This effort examined the impact of ZrO2-PdNiD CF/LANR quantum electronic devices capable of significant energy gain upon CR-39. Chips were used at different distances, and one was placed directly over the NANOR during the irradiation sequence over several days. Examination of the processed CR-39 chips was done by sectioning each chip into 24 pixels, and a count was done by conventional optical microscopy with side imaging which separates out surface noise from deeper pits. There was a fall-off in pit count with increasing distance from the operating system. Most interestingly, the CR39 over the device essentially imaged the active CF/LANR device at very low resolution. The scalar counts of the largest and paired pits over the pixels, as we have done previously with positron emission tomography of tumors, reveal an "image" of the LANR/CF device elicited only after etching the CR-39 to derive the information "written" thereon. The conclusion is that LANR is a nuclear process, and for this system at this power level, the quantitative amount is measurable, can give a spatial image, and is biologically insignificant. In addition, integrating emission-sensitive elements can be used to image the active site of LANR systems

Energy Gain From Preloaded ZrO2-PdNi-D Quantum Electronic Components - Energy Gain From Preloaded ZrO 2 -PdNi-D Nanostructured CF/LANR Quantum Electronic Components

Abstract -Previously, we reported that such nanocomposite ZrO 2 -PdNiD LANR materials have been made into LANR/CF transistors which exhibit energy gain and simultaneous non-thermal near infrared emission. This is accompanied by complicated polarization/transconduction phenomena including an avalanche transconduction electrical breakdown, which has a critical role in excess heat generation. This paper presents a new generation of preloaded LANR (CF) activated nanocomposite ZrO 2 -PdNiD CF/LANR quantum electronic devices capable of energy gain. These devices dry, glued into electrically conductive, sealed, configurations. The core is ZrO 2 -(PdNiD) with additional D 2 and H 2 . They are self-contained CF/LANR quantum electronic components containing ZrO 2 -PdNi-D LANR/CF nanostructured materials which generate significant excess heat from applied electric fields. They also feature two terminals and selfcontained superior handling properties enabling portability and transportability. Most importantly, the activation of the desired LANR reactions is, for the first time, separated from the loading of the substrate. Although their development has required control of their breakdown states and the quenching tendencies of nanostructured materials, these ZrO 2 -PdNiD CF/LANR quantum electronic devices are potentially very useful because they are reproducible active nanostructured CF/LANR quantum electronic devices