Spin transport in graphene nanostructures

Graphene is an interesting material for spintronics, showing long spin relaxation lengths even at room temperature. For future spintronic devices it is important to understand the behavior of the spins and the limitations for spin transport in structures where the dimensions are smaller than the spin relaxation length. However, the study of spin injection and transport in graphene nanostructures is highly unexplored. Here we study the spin injection and relaxation in nanostructured graphene with dimensions smaller than the spin relaxation length. For graphene nanoislands, where the edge length to area ratio is much higher than for standard devices, we show that enhanced spin-flip processes at the edges do not seem to play a major role in the spin relaxation. On the other hand, contact induced spin relaxation has a much more dramatic effect for these low dimensional structures. By studying the nonlocal spin transport through a graphene quantum dot we observe that the obtained values for spin relaxation are dominated by the connecting graphene islands and not by the quantum dot itself. Using a simple model we argue that future nonlocal Hanle precession measurements can obtain a more significant value for the spin relaxation time for the quantum dot by using high spin polarization contacts in combination with low tunneling rates

Nonleptonic two-body B-decays including axial-vector mesons in the final state

We present a systematic study of exclusive charmless nonleptonic two-body B decays including axial-vector mesons in the final state. We calculate branching ratios of B\to PA, VA and AA decays, where A, V and P denote an axial-vector, a vector and a pseudoscalar meson, respectively. We assume naive factorization hypothesis and use the improved version of the nonrelativistic ISGW quark model for form factors in B\to A transitions. We include contributions that arise from the effective \Delta B=1 weak Hamiltonian H_{eff}. The respective factorized amplitude of these decays are explicitly showed and their penguin contributions are classified. We find that decays B^-to a_1^0\pi^-,\barB^0\to a_1^{\pm}\pi^{\mp}, B^-\to a_1^-\bar K^0, \bar B^0\to a_1^+K^-, \bar B^0\to f_1\bar K^0, B^-\to f_1K^-, B^-\to K_1^-(1400)\etap, B^-\to b_1^-\bar K^{0}, and \bar B^0\to b_1^+\pi^-(K^-) have branching ratios of the order of 10^{-5}. We also study the dependence of branching ratios for B \to K_1P(V,A) decays (K_1=K_1(1270),K_1(1400)) with respect to the mixing angle between K_A and K_B.Comment: 28 pages, 2 tables and one reference added, notation changed in appendices, some numerical results and abstract correcte

Spin transport in high quality suspended graphene devices

We measure spin transport in high mobility suspended graphene (\mu ~ 10^5 cm^2/Vs), obtaining a (spin) diffusion coefficient of 0.1 m^2/s and giving a lower bound on the spin relaxation time (\tau_s ~ 150 ps) and spin relaxation length (\lambda_s=4.7 \mu m) for intrinsic graphene. We develop a theoretical model considering the different graphene regions of our devices that explains our experimental data.Comment: 22 pages, 6 figures; Nano Letters, Article ASAP (2012) (http://pubs.acs.org/doi/abs/10.1021/nl301050a

Field induced quantum-Hall ferromagnetism in suspended bilayer graphene

We have measured the magneto-resistance of freely suspended high-mobility bilayer graphene. For magnetic fields $B>1$ T we observe the opening of a field induced gap at the charge neutrality point characterized by a diverging resistance. For higher fields the eight-fold degenerated lowest Landau level lifts completely. Both the sequence of this symmetry breaking and the strong transition of the gap-size point to a ferromagnetic nature of the insulating phase developing at the charge neutrality point.Comment: 7 pages, 5 figure

Tracing the early development of harmful algal blooms with the aid of Lagrangian coherent structures

Several theories have been proposed to explain the development of harmful algal blooms (HABs) produced by the toxic dinoflagellate \emph{Karenia brevis} on the West Florida Shelf. However, because the early stages of HAB development are usually not detected, these theories have been so far very difficult to verify. In this paper we employ simulated \emph{Lagrangian coherent structures} (LCSs) to trace the early location of a HAB in late 2004 before it was transported to an area where it could be detected by satellite imagery, and then we make use of a population dynamics model to infer the factors that may have led to its development. The LCSs, which are computed based on a surface flow description provided by an ocean circulation model, delineate past and future histories of boundaries of passively advected fluid domains. The population dynamics model determines nitrogen in two components, nutrients and phytoplankton, which are assumed to be passively advected by the simulated surface currents. Two nearshore nutrient sources are identified for the HAB whose evolution is found to be strongly tied to the simulated LCSs. While one nutrient source can be associated with a coastal upwelling event, the other is seen to be produced by river runoff, which provides support to a theory of HAB development that considers nutrient loading into coastal waters produced by human activities as a critical element. Our results show that the use of simulated LCSs and a population dynamics model can greatly enhance our understanding of the early stages of the development of HABs.Comment: Submitted to JGR-Ocean

On global models for isolated rotating axisymmetric charged bodies; uniqueness of the exterior field

A relatively recent study by Mars and Senovilla provided us with a uniqueness result for the exterior vacuum gravitational field generated by an isolated distribution of matter in axial rotation in equilibrium in General Relativity. The generalisation to exterior electrovacuum gravitational fields, to include charged rotating objects, is presented here.Comment: LaTeX, 21 pages, uses iopart styl

Zonal Jets as Transport Barriers in Planetary Atmospheres

The connection between transport barriers and potential vorticity (PV) barriers in PV-conserving flows is investigated with a focus on zonal jets in planetary atmospheres. A perturbed PV-staircase model is used to illustrate important concepts. This flow consists of a sequence of narrow eastward and broad westward zonal jets with a staircase PV structure; the PV-steps are at the latitudes of the cores of the eastward jets. Numerically simulated solutions to the quasigeostrophic PV conservation equation in a perturbed PV-staircase flow are presented. These simulations reveal that both eastward and westward zonal jets serve as robust meridional transport barriers. The surprise is that westward jets, across which the background PV gradient vanishes, serve as robust transport barriers. A theoretical explanation of the underlying barrier mechanism is provided. It is argued that transport barriers near the cores of westward zonal jets, across which the background PV gradient is small, are found in Jupiter's midlatitude weather layer and in the Earth's summer hemisphere subtropical stratosphere.Comment: Accepted for publication in JA

Large yield production of high mobility freely suspended graphene electronic devices on a PMGI based organic polymer

The recent observation of fractional quantum Hall effect in high mobility suspended graphene devices introduced a new direction in graphene physics, the field of electron-electron interaction dynamics. However, the technique used currently for the fabrication of such high mobility devices has several drawbacks. The most important is that the contact materials available for electronic devices are limited to only a few metals (Au, Pd, Pt, Cr and Nb) since only those are not attacked by the reactive acid (BHF) etching fabrication step. Here we show a new technique which leads to mechanically stable suspended high mobility graphene devices which is compatible with almost any type of contact material. The graphene devices prepared on a polydimethylglutarimide based organic resist show mobilities as high as 600.000 cm^2/Vs at an electron carrier density n = 5.0 10^9 cm^-2 at 77K. This technique paves the way towards complex suspended graphene based spintronic, superconducting and other types of devices.Comment: 14 pages, 4 figure