Out-of-Pocket Cost for Individuals Being Treated for Opioid Dependence in Rutland County, Vermont

Each day more than 140 Americans die from drug overdoses, 91 specifically due to opioids. In Vermont, more than 50 people die each year from opioid poisoning. With insurance coverage being a critical component of Opioid Dependence Recovery, many people seeking treatment are unaware of the financial barriers to recovery- namely the out-of-pocket costs associated with treatment. This study sought to provide insight on the financial impact of Opioid Dependence Treatment on the patient, and provide financial assistance information to the Rutland County community.https://scholarworks.uvm.edu/fmclerk/1436/thumbnail.jp

Children who cannot read: a study of their home environment

Thesis (M.S.)--Boston University, 1943. This item was digitized by the Internet Archive

Controlled oxide removal for the preparation of damage-free InAs(110) surfaces

Controlled oxide removal from InAs(110) surfaces using atomic hydrogen (H*) has been achieved by monitoring the contaminant vibrational modes with high resolution electron energy loss spectroscopy (HREELS). The contributing oxide vibrational modes of the partially H* cleaned surface have been identified. Following hydrocarbon desorption during preliminary annealing at 360 °C, exposure to atomic hydrogen at 400 °C initially removes the arsenic oxides and indium suboxides; complete indium oxide removal requires significantly higher hydrogen doses. After a total molecular hydrogen dose of 120 kL, a clean, ordered surface, exhibiting a sharp (1×1) pattern, was confirmed by low energy electron diffraction and x-ray photoelectron spectroscopy. Energy dependent HREELS studies of the near-surface electronic structure indicate that no residual electronic damage or dopant passivation results from the cleaning process

Electron dynamics in InNxSb1–x

Electron transport properties in InNxSb1–x are investigated for a range of alloy compositions. The band structure of InNxSb1–x is modeled using a modified k·p Hamiltonian. This enables the semiconductor statistics for a given x value to be calculated from the dispersion relation of the E– subband. These calculations reveal that for alloy compositions in the range 0.001<=x<=0.02 there is only a small variation of the carrier concentration at a given plasma frequency. A similar trend is observed for the effective mass at the Fermi level. Measurements of the plasma frequency and plasmon lifetime for InNxSb1–x alloys enable the carrier concentration and the effective mass at the Fermi level to be determined and a lower limit for the electron mobility to be estimated

Enhancement of the Critical Current Density of YBa2Cu3Ox Superconductors under Hydrostatic Pressure

The dependence of the critical current density Jc on hydrostatic pressure to 0.6 GPa is determined for a single 25-degree [001]-tilt grain boundary in a bicrystalline ring of nearly optimally doped melt-textured YBa2Cu3Ox. Jc is found to increase rapidly under pressure at +20 %/GPa. A new diagnostic method is introduced (pressure-induced Jc relaxation) which reveals a sizeable concentration of vacant oxygen sites in the grain boundary region. Completely filling such sites with oxygen anions should lead to significant enhancements in Jc.Comment: revised manuscript, graphic errors in figures correcte

Two-dimensional superconductor-insulator transition in bulk single-crystal YBa_2Cu_3O_(6.38)

We use a magnetic field to tune a highly anisotropic single crystal of oxygen-deficient YBa_2Cu_3O_(7-δ) with a transition temperature of 2 K through the superconductor-insulator transition. The sheet resistance scales with temperature, 0.05≤T≤1.0 K, and field, 0≤H≤94 kOe, in a manner predicted by a theory for quantum phase transitions in disordered two-dimensional superconductors

Origin of the n-type conductivity of InN: the role of positively charged dislocations

As-grown InN is known to exhibit high unintentional n-type conductivity. Hall measurements from a range of high-quality single-crystalline epitaxially grown InN films reveal a dramatic reduction in the electron density (from low 1019 to low 1017 cm–3) with increasing film thickness (from 50 to 12 000 nm). The combination of background donors from impurities and the extreme electron accumulation at InN surfaces is shown to be insufficient to reproduce the measured film thickness dependence of the free-electron density. When positively charged nitrogen vacancies (VN+) along dislocations are also included, agreement is obtained between the calculated and experimental thickness dependence of the free-electron concentration

Core-level photoemission spectroscopy of nitrogen bonding in GaNxAs1–x alloys

The nitrogen bonding configurations in GaNxAs1–x alloys grown by molecular beam epitaxy with 0.07=0.03, the nitrogen is found to exist in a single bonding configuration – the Ga–N bond; no interstitial nitrogen complexes are present. The amount of nitrogen in the alloys is estimated from the XPS using the N 1s photoelectron and Ga LMM Auger lines and is found to be in agreement with the composition determined by x-ray diffraction

Layering transitions for adsorbing polymers in poor solvents

An infinite hierarchy of layering transitions exists for model polymers in solution under poor solvent or low temperatures and near an attractive surface. A flat histogram stochastic growth algorithm known as FlatPERM has been used on a self- and surface interacting self-avoiding walk model for lengths up to 256. The associated phases exist as stable equilibria for large though not infinite length polymers and break the conjectured Surface Attached Globule phase into a series of phases where a polymer exists in specified layer close to a surface. We provide a scaling theory for these phases and the first-order transitions between them.Comment: 4 pages, 4 figure