439 research outputs found
Transient response under ultrafast interband excitation of an intrinsic graphene
The transient evolution of carriers in an intrinsic graphene under ultrafast
excitation, which is caused by the collisionless interband transitions, is
studied theoretically. The energy relaxation due to the quasielastic acoustic
phonon scattering and the interband generation-recombination transitions due to
thermal radiation are analyzed. The distributions of carriers are obtained for
the limiting cases when carrier-carrier scattering is negligible and when the
intercarrier scattering imposes the quasiequilibrium distribution. The
transient optical response (differential reflectivity and transmissivity) on a
probe radiation and transient photoconductivity (response on a weak dc field)
appears to be strongly dependent on the relaxation and recombination dynamics
of carriers.Comment: 9 pages, 8 figure
Spectral and polarization dependencies of luminescence by hot carriers in graphene
The luminescence caused by the interband transitions of hot carriers in
graphene is considered theoretically. The dependencies of emission in mid- and
near-IR spectral regions versus energy and concentration of hot carriers are
analyzed; they are determined both by an applied electric field and a gate
voltage. The polarization dependency is determined by the angle between the
propagation direction and the normal to the graphene sheet. The characteristics
of radiation from large-scale-area samples of epitaxial graphene and from
microstructures of exfoliated graphene are considered. The averaged over angles
efficiency of emission is also presented.Comment: 6 pages, 5 figure
Depletion of carriers and negative differential conductivity in an intrinsic graphene under a dc electric field
The heating of carriers in an intrinsic graphene under an abrupt switching
off a dc electric field is examined taking into account both the energy
relaxation via acoustic and optic phonons and the interband
generation-recombination processes. The later are caused by the interband
transitions due to optical phonon modes and thermal radiation. Description of
the temporal and steady-state responses, including the nonequilibrium
concentration and energy as well as the current-voltage characteristics, is
performed. At room temperature, a nearly-linear current-voltage characteristic
and a slowly-varied concentration take place for fields up to -- 20 kV/cm.
Since a predominant recombination of high-energy carriers due to optical phonon
emission at low temperatures, a depletion of concentration takes place below --
250 K. For lower temperatures the current tends to be saturated and a negative
differential conductivity appears below -- 170 K in the region of fields -- 10
V/cm.Comment: 8 pages, 10 figures, extended versio
Coherent oscillations of electrons in tunnel-coupled wells under ultrafast intersubband excitation
Ultrafast intersubband excitation of electrons in tunnell-coupled wells is
studied depending on the structure parameters, the duration of the infrared
pump and the detuning frequency. The temporal dependencies of the photoinduced
concentration and dipole moment are obtained for two cases of transitions: from
the single ground state to the tunnel-coupled excited states and from the
tunnel-coupled states to the single excited state. The peculiarities of
dephasing and population relaxation processes are also taken into account. The
nonlinear regime of the response is also considered when the splitting energy
between the tunnel-coupled levels is renormalized by the photoexcited electron
concentration. The dependencies of the period and the amplitude of oscillations
on the excitation pulse are presented with a description of the nonlinear
oscillations damping.Comment: 8 pages, 12 figure
Thermal-radiation-induced nonequilibrium carriers in an intrinsic graphene
We examine an intrinsic graphene connected to the phonon thermostat at
temperature T under irradiation of thermal photons with temperature T_r, other
than T. The distribution of nonequilibrium electron-hole pairs was obtained for
the cases of low and high concentration of carriers. For the case when the
interparticle scattering is unessential, the distribution function is
determined by the interplay of intraband relaxation of energy due to acoustic
phonons and interband radiative transitions caused by the thermal radiation.
When the Coulomb scattering dominates, then the quasi-equilibrium distribution
with effective temperature and non-equilibrium concentration, determined
through balance equations, is realized. Due to the effect of thermal radiation
with temperature concentration and conductivity of carriers in
graphene modify essentially. It is demonstrated, that at the negative
interband absorption, caused by the inversion of carriers distribution, can
occur, i.e. graphene can be unstable under thermal irradiation.Comment: 5 pages, 4 figure
Trion dynamics in coupled double quantum wells. Electron density effects
We have studied the coherent dynamics of injected electrons when they are
either free or bounded both in excitons and in trions (charged excitons). We
have considered a remotely doped asymmetric double quantum well where an excess
of free electrons and the direct created excitons generate trions. We have used
the matrix density formalism to analyze the electron dynamics for different
concentration of the three species. Calculations show a significant
modification of the free electron inter-sublevel oscillations cWe have studied
the coherent dynamics of injected electrons when they are aused by electrons
bound in excitons and trions. Based on the present calculations we propose a
method to detect trions through the emitted electromagnetic radiation or the
current density.Comment: 14 pages, 13 figure
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