Transient response under ultrafast interband excitation of an intrinsic graphene

The transient evolution of carriers in an intrinsic graphene under ultrafast excitation, which is caused by the collisionless interband transitions, is studied theoretically. The energy relaxation due to the quasielastic acoustic phonon scattering and the interband generation-recombination transitions due to thermal radiation are analyzed. The distributions of carriers are obtained for the limiting cases when carrier-carrier scattering is negligible and when the intercarrier scattering imposes the quasiequilibrium distribution. The transient optical response (differential reflectivity and transmissivity) on a probe radiation and transient photoconductivity (response on a weak dc field) appears to be strongly dependent on the relaxation and recombination dynamics of carriers.Comment: 9 pages, 8 figure

Gain without inversion in a biased superlattice

Intersubband transitions in a superlattice under homogeneous electric field is studied within the tight-binding approximation. Since the levels are equi-populated, the non-zero response appears beyond the Born approximation. Calculations are performed in the resonant approximation with scattering processes exactly taken into account. The absorption coefficient is equal zero for the resonant excitation while a negative absorption (gain without inversion) takes place below the resonance. A detectable gain in the THz spectral region is obtained for the low-doped $GaAs$-based superlattice and spectral dependencies are analyzed taking into account the interplay between homogeneous and inhomogeneous mechanisms of broadening.Comment: 6 pages, 4 figure

Depletion of carriers and negative differential conductivity in an intrinsic graphene under a dc electric field

The heating of carriers in an intrinsic graphene under an abrupt switching off a dc electric field is examined taking into account both the energy relaxation via acoustic and optic phonons and the interband generation-recombination processes. The later are caused by the interband transitions due to optical phonon modes and thermal radiation. Description of the temporal and steady-state responses, including the nonequilibrium concentration and energy as well as the current-voltage characteristics, is performed. At room temperature, a nearly-linear current-voltage characteristic and a slowly-varied concentration take place for fields up to -- 20 kV/cm. Since a predominant recombination of high-energy carriers due to optical phonon emission at low temperatures, a depletion of concentration takes place below -- 250 K. For lower temperatures the current tends to be saturated and a negative differential conductivity appears below -- 170 K in the region of fields -- 10 V/cm.Comment: 8 pages, 10 figures, extended versio

Coherent oscillations of electrons in tunnel-coupled wells under ultrafast intersubband excitation

Ultrafast intersubband excitation of electrons in tunnell-coupled wells is studied depending on the structure parameters, the duration of the infrared pump and the detuning frequency. The temporal dependencies of the photoinduced concentration and dipole moment are obtained for two cases of transitions: from the single ground state to the tunnel-coupled excited states and from the tunnel-coupled states to the single excited state. The peculiarities of dephasing and population relaxation processes are also taken into account. The nonlinear regime of the response is also considered when the splitting energy between the tunnel-coupled levels is renormalized by the photoexcited electron concentration. The dependencies of the period and the amplitude of oscillations on the excitation pulse are presented with a description of the nonlinear oscillations damping.Comment: 8 pages, 12 figure

Thermal-radiation-induced nonequilibrium carriers in an intrinsic graphene

We examine an intrinsic graphene connected to the phonon thermostat at temperature T under irradiation of thermal photons with temperature T_r, other than T. The distribution of nonequilibrium electron-hole pairs was obtained for the cases of low and high concentration of carriers. For the case when the interparticle scattering is unessential, the distribution function is determined by the interplay of intraband relaxation of energy due to acoustic phonons and interband radiative transitions caused by the thermal radiation. When the Coulomb scattering dominates, then the quasi-equilibrium distribution with effective temperature and non-equilibrium concentration, determined through balance equations, is realized. Due to the effect of thermal radiation with temperature $T_r\neq T$ concentration and conductivity of carriers in graphene modify essentially. It is demonstrated, that at $T_r>T$ the negative interband absorption, caused by the inversion of carriers distribution, can occur, i.e. graphene can be unstable under thermal irradiation.Comment: 5 pages, 4 figure

Trion dynamics in coupled double quantum wells. Electron density effects

We have studied the coherent dynamics of injected electrons when they are either free or bounded both in excitons and in trions (charged excitons). We have considered a remotely doped asymmetric double quantum well where an excess of free electrons and the direct created excitons generate trions. We have used the matrix density formalism to analyze the electron dynamics for different concentration of the three species. Calculations show a significant modification of the free electron inter-sublevel oscillations cWe have studied the coherent dynamics of injected electrons when they are aused by electrons bound in excitons and trions. Based on the present calculations we propose a method to detect trions through the emitted electromagnetic radiation or the current density.Comment: 14 pages, 13 figure

Frequency dependence of induced spin polarization and spin current in quantum wells

Dynamic response of two-dimensional electron systems with spin-orbit interaction is studied theoretically on the basis of quantum kinetic equation, taking into account elastic scattering of electrons. The spin polarization and spin current induced by the applied electric field are calculated for the whole class of electron systems described by p-linear spin-orbit Hamiltonians. The absence of nonequilibrium intrinsic static spin currents is confirmed for these systems with arbitrary (nonparabolic) electron energy spectrum. Relations between the spin polarization, spin current, and electric current are established. The general results are applied to the quantum wells grown in [001] and [110] crystallographic directions, with both Rashba and Dresselhaus types of spin-orbit coupling. It is shown that the existence of the fixed (momentum-independent) precession axes in [001]-grown wells with equal Rashba and Dresselhaus spin velocities or in symmetric [110]-grown wells leads to vanishing spin polarizability at arbitrary frequency of the applied electric field. This property is explained by the absence of Dyakonov-Perel-Kachorovskii spin relaxation for the spins polarized along these precession axes. As a result, a considerable frequency dispersion of spin polarization at very low frequency in the vicinity of the fixed precession axes is predicted. Possible effects of extrinsic spin-orbit coupling on the obtained results are discussed.Comment: 14 pages, 6 figures; published with minor corrections in Phys. Rev.

Voltage and temperature dependencies of conductivity in gated graphene

The resistivity of gated graphene is studied taking into account electron and hole scattering by short- and long-range structural imperfections the characteristics of disorder were taken from the scanning tunneling microscopy data and by acoustic phonons. The calculations are based on the quasiclassical kinetic equation with the normalization condition fixed by surface charge. The gate-voltage and temperature effects on the resistance peak, which is centered at the point of intrinsic conductivity, are found to be in agreement with the transport measurements.Comment: 4 pages, 4 Fig

Rabi oscillations under ultrafast excitation of graphene

We study coherent nonlinear dynamics of carriers under ultrafast interband excitation of an intrinsic graphene. The Rabi oscillations of response appear with increasing of pumping intensity. The photoexcited distribution is calculated versus time and energy taking into account the effects of energy relaxation and dephasing. Spectral and temporal dependencies of the response on a probe radiation (transmission and reflection coefficients) are considered for different pumping intensities and the Rabi oscillations versus time and intensity are analyzed.Comment: 6 pages, 6 figure