24 research outputs found
Temporal stability and absolute composition issues in molecular beam epitaxy of AlGaAs/GaAs THz QCL
No full textTemporal stability and absolute composition issues in molecular beam epitaxy of AlGaAs/GaAs THz QCL
No full textDevelopment of a 0.15 Ī¼m GaAs pHEMT Process Design Kit for Low-Noise Applications
No full textThis work presents a process design kit (PDK) for a 0.15 Ī¼m GaAs pHEMT process for low-noise MMIC applications developed for AWR Microwave Office (MWO). A complete set of basic elements is proposed, such as TaN thin film resistors and mesa-resistors, capacitors, inductors, and transistors. The developed PDK can be used in technology transfer or education
Erratum to: Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures (Semiconductors, (2018), 52, 12, (1551-1558), 10.1134/S1063782618120102)
Full text linkThe name of the third author should read E. V. Ilchenko. Ā© 2018, Pleiades Publishing, Ltd
Electron Transport in PHEMT AlGaAs/InGaAs/GaAs Quantum Wells at Different Temperatures: Influence of One-Side Ī“-Si Doping
No full textPeculiarities of Silicon-Donor Ionization and Electron Scattering in Pseudomorphous AlGaAs/InGaAs/GaAs Quantum Wells with Heavy Unilateral Delta-Doping
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