Scientific complications and controversies noted in the field of CdS/CdTe thin film solar cells and the way forward for further development

Cadmium telluride-based solar cell is the most successfully commercialised thin film solar cell today. The laboratory-scale small devices have achieved ~ 22%, and commercial solar panels have reached ~ 18% conversion efficiencies. However, there are various technical complications and some notable scientific contradictions that appear in the scientific literature published since the early 1970s. This review paper discusses some of these major complications and controversies in order to focus future research on issues of material growth and characterisation, post-growth processing, device architectures and interpretation of the results. Although CdTe can be grown using more than 14 different growth techniques, successful commercialisation has been taken place using close-space sublimation and electrodeposition techniques only. The experimental results presented in this review are mainly based on electrodeposition. Historical trends of research and commercial successes have also been discussed compared to the timeline of novel breakthroughs in this field. Deeper understanding of these issues may lead to further increase in conversion efficiencies of this solar cell. Some novel ideas for further development of thin film solar cells are also discussed towards the end of this paper

Effect of CuPc and PEDOT:PSS as hole transport layers in planar heterojunction CdS/CdTe solar cell

This paper presents the fabrication and photovoltaic performance of new architecture based planar heterojunction CdS/CdTe thin film solar cells which were employed with two hole transport layers (PEDOT:PSS as HTL1 and CuPc as HTL2). The reported solar cells were fabricated through various deposition techniques such as sputtering, thermal evaporation, spin coating and characterized by FESEM, AFM, XPS, UPS and AM 1.5 solar simulator. The interfacial layer growth and chemical state identification of the deposited thin films were studied by cross-sectional FESEM and XPS techniques. The band bending occurs between absorbing and transporting layer helps to inject the excited charge carriers effectively into electrode that was explained using UPS analysis. The present work intends to explain the role of additional window layer (TiO2), buffer layer (CdS) and hole transporting layers (PEDOT:PSS and CuPc) in the novel device architecture. Further, these findings will offer new research directions to address the double hole transport (back contact) layers selection concept in CdS/CdTe heterojunction based solar cells

Morphology Controlled n-Type TiO2 and Stoichiometry Adjusted p-Type Cu2ZnSnS4 Thin Films for Photovoltaic Applications

This paper presents the fabrication and characterization of stoichiometry adjusted Cu2Zn1.5Sn1.2S4.4 thin film (FTO/TiO2/CdS/CZTS/Au) photovoltaic (PV) devices. The PV devices were developed using the window layer of rutile TiO2 nanoarchitecture arrays, i.e., one-dimensional (1D) nanorods and three-dimensional (3D) combined/hierarchical structures (nanorods with microspheres). One-dimensional (1D) nanorods and 3D combined structures of TiO2 window layers were synthesized by a hydrothermal method with different solvents without any assistance of surfactants and templates. We achieved two kinds of TiO2 nanostructures by tuning the precursor concentrations and volume by keeping a constant growth time and temperature. The detailed structural properties were studied using X-ray diffraction and high resolution transmission electron microscopy. Phase formation and chemical state of the prepared samples were examined by Raman spectroscopy and X-ray photoelectron spectroscopy. The surface morphology and luminescence studies of TiO2 nanostructures were analyzed using field emission scanning electron microscopy and cathodoluminescence techniques. The current voltage performance of fabricated devices were measured under an AM 1.5 solar simulator. It is observed that combined structure PV device shows better efficiency (1.45%) than the nanorods alone structure (0.55%). Present work is a first attempt made to construct the inverted CZTS based solar cells. This study establishes the window layer of hierarchical TiO2 nanostructures based morphology that offers a great potential for the development of high-efficiency nonstoichiometric CZTS based solar cells

Simulation of a new back junction approach for reducing charge collection in 200 GHz SiGeHBTs

We present a new back junction approach for reducing SEU-induced charge collection in SiGe HBTS, and demonstrate its effectiveness in a state-of-the-art 200 GHz SiGe HBT using full 3-D device simulation. An additional n(+) layer is used below the p-type isolation layer to form a back junction. The back junction limits potential funneling to within the p-type layer, which effectively limits the total amount of drift charge collection that is now shared by the collector-to-substrate junction and the back junction. The back junction also cuts off the diffusion charge coming from the substrate, further limiting charge collection by the HBT collector. A thinner p-type "substrate" layer and a better contact to the added n+ layer are shown to help reduce charge collection by the HBT collector, the sensitive node