1 research outputs found
Photoluminescence upconversion at interfaces driven by a sequential two-photon absorption mechanism
This paper reports on the results of an investigation into the nature of photoluminescence upconversion at
GaAs/InGaP2 interfaces. Using a dual-beam excitation experiment, we demonstrate that the upconversion in our
sample proceeds via a sequential two-photon optical absorption mechanism. Measurements of photoluminescence
and upconversion photoluminescence revealed evidence of the spatial localization of carriers in the InGaP2
material, arising from partial ordering of the InGaP2. We also observed the excitation of a two-dimensional electron
gas at the GaAs/InGaP2 heterojunction that manifests as a high-energy shoulder in the GaAs photoluminescence
spectrum. Furthermore, the results of upconversion photoluminescence excitation spectroscopy demonstrate that
the photon energy onset of upconversion luminescence coincides with the energy of the two-dimensional electron
gas at the GaAs/InGaP2 interface, suggesting that charge accumulation at the interface can play a crucial role in
the upconversion process