42 research outputs found

    EFFECT OF GROWTH CONDITIONS AND VARIETY ON DAMAGE SUSCEPTIBILITY OF SUGAR BEET ABREGE -L'IMPACT DES CONDITIONS DE RECO L TE ET DE VARIETE SUR LA SENSIBILITE DES BETTERAVES AUX DOMMAGES

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    ABSTRACT Damage to sugar beet causes sugar losses either by loss of beet tissue during harvest, by increased respiration of sugar due to wound healing during storage or by leaching to the wash water during processing. One way to reduce damage is the careful handling of beet at harvest and transport However, efforts to reduce soil tare often have the opposite effect Another possible strategy to reduce beet damage is to grow less susceptible beet This may be achieved by choosing the right variety or growth conditions. Therefore, we want to know more about the effect of these factors on damage susceptibility. During a three-year collaborative study this has been investigated in a number of field trials in The Netherlands and Belgium Manually harvested beet samples were treated on a turbine to inflict damage in a standardized way and were then visually examined for root tip breakage and surface damage. In other beet samples from the same plots, the internal quality and the elasticity were assessed. Significant effects of beet weight, variety, N fertilizer, year and harvest period on damage susceptibility were found. Multiple regression showed that a considerable part of the root damage could be attributed to beet weight, elasticity and composition. However, the predictive value of individual parameters was poor From the results it can be concluded that variety and growing conditions affect damage susceptibility of sugar beet. Further research will have to focus on simple and reliable methods for assessing this property

    Non-permselective membrane reactor for the selective catalytic reduction of NOx with ammonia

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    A novel type of reactor is developed for the catalytic reduction of NOx with NH3. In this reactor a porous membrane is noted to keep the reactants separated from each other and to carry out the reaction in a controlled way inside the membrane. As the rate of reaction is fast compared to the diffusion rate of the reactants, the molar fluxes of both reactants are in stoichiometric ratio and slip of reactants to the opposite side of the membrane is prevented. The advantage of this reactor is the possibility to obtain high conversions of NOx despite fluctuating concentrations of NOx without severe slip of NH$-3/. This membrane reactor has been tested experimentally and it is demonstrated that it is able to cope with a varying ratio of concentrations of NOx and NH3 without detectable slip of NH3 or NOx at a temperature of 569 K

    Hydrogenated amorphous silicon deposited under accurately controlled ion bombardment using pulse-shaped substrate biasing

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    We have applied pulse-shaped biasing to the expanding thermal plasma deposition of hydrogenated amorphous silicon at substrate temperatures ? 200?°C and growth rates around 1 nm/s. Substrate voltage measurements and measurements with a retarding field energy analyzer demonstrate the achieved control over the ion energy distribution for deposition on conductive substrates and for deposition of conductive materials on nonconductive substrates. Presence of negative ions/particles in the Ar–H2–SiH4 plasma is deduced from a voltage offset during biasing. Densification of the material at low Urbach energies is observed at a deposited energy 4.8?eV/Si atom is attributed to bulk atom displacement in subsurface layers. We make the unique experimental abservation of a decreasing Tauc band gap at increasing total hydrogen concentration—this allows to directly relate the band gap of amorphous silicon to the presence of nanovoids in the material.Electrical Sustainable EnergyElectrical Engineering, Mathematics and Computer Scienc
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